Fairchild FDA20N50, FDA20N50-F109 service manual

FDA20N50 / FDA20N50_F109

D

G

S

GSD

TO-3P

FDA Series

500V N-Channel MOSFET

FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET

February 2012

TM

UniFET

Features

• 22A, 500V, R

• Low gate charge ( typical 45.6 nC)

•Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 27 pF)

rss

= 0.23Ω @VGS = 10 V

DS(on)

Absolute Maximum Ratings

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

Symbol Parameter FDA20N50 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

P

D

T

J, TSTG

T

L

* Drain current limited by maximum junction termperature.

Drain-Source Voltage 500 V

Drain Current - Continuous (TC = 25°C)

- Continuous (T

Drain Current - Pulsed

Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy

Avalanche Current (Note 1) 22 A

Repetitive Avalanche Energy (Note 1) 28.0 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 20 V/ns

22

13.2

88

1110 mJ

280

2.3

300 °C

Thermal Characteristics

tailored to

A
A

A

W

W/°C

Symbol Parameter Min. Max. Unit

R

θJC

R

θCS

R

θJA

©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDA20N50 / FDA20N50_F109 Rev.C0

Thermal Resistance, Junction-to-Case -- 0.44 °C/W

Thermal Resistance, Case-to-Sink 0.24 -- °C/W

Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA20N50 FDA20N50 TO-3P -- -- 30

FDA20N50 FDA20N50_F109 TO-3PN -- -- 30

FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV
/ ΔT

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 500 -- -- V

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V

I

= 250μA, Referenced to 25°C -- 0.50 -- V/°C

D

V

= 400V, TC = 125°C

DS

--

--

--

--

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V

Static Drain-Source
On-Resistance

Forward Transconductance VDS = 40V, ID = 11A

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 355 465 pF

V

= 10V, ID = 11A -- 0.20 0.23 Ω

GS

(Note 4)

-- 24.6 -- S

-- 2400 3120 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 27 -- pF

Turn-O n Delay Time VDD = 250V, ID = 20A

= 25Ω

R

Turn-O n Rise Time -- 375 760 ns

G

-- 95 200 ns

Turn-O ff Delay Tim e -- 100 210 ns

Turn-O ff Fall Time -- 105 220 ns

Total Gate Charge VDS = 400V, ID = 20A

V

= 10V

Gate-Source Charge -- 14.8 -- nC

GS

Gate-Drain Charge -- 21.6 -- nC

(Note 4, 5)

-- 45.6 59.5 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 80 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 22A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 20A

/dt =100A/μs (Note 4)

dI

Reverse Recovery Charge -- 7.20 -- μC

F

-- 507 -- ns

10

1

μA
μA

NOTES:

1. Repetitive Rating: Pulse width limite

2. L = 4.1mH, I

3. ISD ≤ 22A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 30

5. Essentially Independent of Operating Temperature Typical Characteristics

= 22A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

d by maximum junction temperature

, Starting TJ = 25°C

DSS

0μs, Duty Cycle ≤ 2%

FDA20N50 / FDA20N50_F109 Rev.C0

2 www.fairchildsemi.com

Typical Performance Characteristics

10

-1

10

0

10

1

10

0

10

1

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

24681012

10

0

10

1

10

2

150oC

25oC

-55oC

* Notes :

1. V

DS

= 40V

2. 250

μs Pulse Test

I

D

, Drain Current [A]

VGS, Gate-Source Voltage [V]

0.20.40.60.81.01.21.41.6

10

0

10

1

150oC

*Notes :

1. V

GS

= 0V

2. 250

μs Pulse Test

25oC

I

DR

, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

0 153045607590

0.0

0.2

0.4

0.6

0.8

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0 1020304050

0

2

4

6

8

10

12

VDS = 250V

VDS = 100V

VDS = 400V

* Note : ID = 20A

V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

6000

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Note :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variati

on vs. Source Current

and Temperatue

FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDA20N50 / FDA20N50_F109 Rev.C0

3 www.fairchildsemi.com