Fairchild FDA20N50F service manual

tm

FDA20N50F

D

G

S

TO-3PN

GSD

N-Channel MOSFET

500V, 22A, 0.26Ω

FDA20N50F N-Channel MOSFET

January 2012

TM

UniFET

Features

•R

• Low gate charge ( Typ. 50nC )

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns

P

D

, T

T

J

T

L

= 0.22Ω ( Typ.) @ VGS = 10V, ID = 11A

DS(on)

( Typ. 27pF )

rss

= 25oC unless otherwise noted*

C

Symbol Parameter Ratings Units

Drain to Source Voltage 500 V

Gate to Source Voltage ±30 V

-Continuous (T

-Continuous (T

(T

= 25oC) 388 W

C

- Derate above 25

STG

D r a i n C u r r e n t

D r a i n C u r r e n t - P u l s e d (Note 1) 88 A

Single Pulsed Avalanche Energy (Note 2) 1110 mJ

Avalanche Current (Note 1) 22 A

Repetitive Avalanche Energy (Note 1) 39 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These device are well suited for high
efficient switched mode power supplies and active power factor
correction.

= 25oC) 22

C

= 100oC) 13

C

o

C3.1W/

300

o

o

A

o

C

C

C

Thermal Characteristics

Symbol Parameter Min. Max. Units

R

θJC

θCS

R

θJA

©2012 Fairchild Semiconductor Corporation
FDA20N50F Rev.C0

Thermal Resistance, Junction to Case - 0.44

Thermal Resistance, Case to Sink 0.24 -

Thermal Resistance, Junction to Ambient - 40

o

C/WR

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA20N50F FDA20N50F TO-3PN - - 30

FDA20N50F N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

ΔBV
/ ΔT

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC500 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 250μA, Referenced to 25oC-0.6-V/

D

V

= 500V, V

DS

= 400V, TC = 125oC - - 100

V

DS

= 0V - - 10

GS

= 0V - - ±100 nA

DS

On Characteristics

V

R

g

GS(th)

FS

DS(on)

Gate Threshold Voltage VGS = VDS, ID = 250μA 3.0 - 5.0 V

Static Drain to Source On Resistance VGS = 10V, ID = 11A - 0.22 0.26 Ω

Forward Transconductance VDS = 40V, ID = 11A (Note 4) -24-S

Dynamic Characteristics

C

C

C

Q

Q

Q

iss

oss

rss

g(tot)

gs

gd

Input Capacitance

Output Capacitance - 350 465 pF

Reverse Transfer Capacitance - 27 40 pF

Total Gate Charge at 10V

Gate to Source Gate Charge - 14 - nC

Gate to Drain “Miller” Charge - 20 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 120 250 ns

Turn-Off Delay Time - 100 210 ns

Turn-Off Fall Time - 60 130 ns

= 25V, VGS = 0V

V

DS

f = 1MHz

V

= 400V, ID = 20A

DS

V

= 10V

GS

(N ote 4, 5)

= 250V, ID = 20A

V

DD

R

= 25Ω

G

(N ote 4 , 5)

- 2550 3390 pF

-5065nC

- 45 100 ns

μA

o

C

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 5mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 22A, di/dt ≤ 200A/μs, VDD ≤ BV
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

FDA20N50F Rev.C0

Maximum Continuous Drain to Source Diode Forward Current - - 22 A

Maximum Pulsed Drain to Source Diode Forward Current - - 88 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 0.5 - μC

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 22A - - 1.5 V

SD

= 20A

SD

2

- 154 - ns

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Typical Performance Characteristics

0.1 1 10

1

10

0.5

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

V

GS

= 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

I

D

,Drain Current[A]

VDS,Drain-Source Voltage[V]

80

468

1

10

100

150oC

*Notes:

1. V

DS

= 20V

2. 250

μs Pulse Test

25oC

I

D

,Drain Current[A]

VGS,Gate-Source Voltage[V]

0.0 0.5 1.0 1.5

1

10

100

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0.2

0 255075

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

*Note: TJ = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.1 1 10

0

1500

3000

4500

6000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

50

0 102030405060

0

2

4

6

8

10

*Note: ID = 20A

VDS = 100V
V

DS

= 250V

V

DS

= 400V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDA20N50F N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDA20N50F Rev.C0

3

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