Fairchild FDA18N50 service manual

FDA18N50

500V N-Channel MOSFET

FDA18N50 500V N-Channel MOSFET

October 2006

TM

UniFET

Features

• 19A, 500V, R

• Low gate charge ( typical 45 nC)

•Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 25 pF)

rss

= 0.265Ω @VGS = 10 V

DS(on)

GSD

TO-3P

FDA Series

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FDA18N50 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

J, TSTG

T

L

Drain-Source Voltage 500 V
Drain Current - Continuous (TC = 25°C)

- Continuous (T
Drain Current - Pulsed
Gate-Source voltage ±30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 19 A
Repetitive Avalanche Energy (Note 1) 23 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

19

11.4
76 A

945 mJ

239

1.92

300 °C

A
A

W

W/°C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

R

θJC

R

θCS

R

θJA

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDA18N50 Rev. A

Thermal Resistance, Junction-to-Case -- 0.52 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA18N50 FDA18N50 TO-3PN - - 30

FDA18N50 500V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 500 -- -- V
Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V

I

= 250µA, Referenced to 25°C--0.5--V/°C

D

V

= 400V, TC = 125°C

DS

--

--

--

--

1

10

µA
µA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V
Static Drain-Source

On-Resistance
Forward Transconductance VDS = 40V, ID = 9.5A

Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 330 430 pF

V

= 10V, ID = 9.5A -- 0.220 0.265 Ω

GS

(Note 4)

-- 25 -- S

-- 2200 2860 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 25 40 pF

Turn-On Delay Time VDD = 250V, ID = 19A

R

= 25Ω

Turn-On Rise Time -- 165 340 ns

G

-- 55 120 ns

Turn-Off Delay Time -- 95 200 ns
Turn-Off Fall Time -- 90 190 ns
Total Gate Charge VDS = 400V, ID = 19A

V

= 10V

Gate-Source Charge -- 12.5 -- nC

GS

Gate-Drain Charge -- 19 -- nC

(Note 4, 5)

-- 45 60 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 19 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 76 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 19A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 19A

dI

/dt =100A/µs (Note 4)

Reverse Recovery Charge -- 5.4 -- µC

F

-- 500 -- ns

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 4.7mH, IAS = 19A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 19A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FDA18N50 Rev. A

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDA18N50 500V N-Channel MOSFET

, Drain Current [A]
I

10

10

10

D

-1

10

V

2

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

1

Bottom : 5.5 V

0

-1

10

GS

0

10

V

, Drain-Source Voltage [V]

2

10

1

10

150oC

25oC

, Drain Current [A]

D

* Notes :

1. 250

2. T

1

10

µs Pulse Test

= 25oC

C

I

0

10

24681012

V

, Gate-Source Voltage [V]

-55oC

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.6

0.5

VGS = 10V

0.4

0.3

0.2

[Ω], Drain-Source On-Resistance

DS(ON)

0.1

R

0 5 10 15 20 25 30 35 40 45 50 55 60 65 70

VGS = 20V

* Note : TJ = 25oC

ID, Drai n Curre nt [A]

2

10

1

10

150oC

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

25oC

VSD, Source-Drain voltage [V]

* Notes :

1. V

2. 250

* Notes :

1. V

2. 250

= 40V

DS

µs Pulse Test

= 0V

GS

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

5000

4000

3000

2000

Capacitances [pF]

1000

0
10

FDA18N50 Rev. A

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

C

oss

C

iss

gd

* Note :

1. V

= 0 V

C

rss

-1

0

10

GS

2. f = 1 MHz

1

10

VDS, Drain-Source Voltage [V]

12

10

VDS = 100V

VDS = 250V

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 1020304050

VDS = 400V

* Note : ID = 18A

QG, Total Gate Charge [nC]

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