Fairchild FDA16N50, FDA16N50-F109 service manual

FDA16N50 / FDA16N50_F109

500V N-Channel MOSFET

FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET

July 2007

TM

UniFET

Features

• 16.5A, 500V, R

• Low gate charge ( typical 32 nC)

•Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 20 pF)

rss

= 0.38Ω @VGS = 10 V

DS(on)

GSD

TO-3P

FDA Series

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

D

G

S

Absolute Maximum Ratings

Symbol Parameter FDA16N50 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

J, TSTG

T

L

Drain-Source Voltage 500 V
Drain Current - Continuous (TC = 25°C)

- Continuous (T
Drain Current - Pulsed
Gate-Source voltage ±30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 16.5 A
Repetitive Avalanche Energy (Note 1) 20.5 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

16.5

9.9
66 A

780 mJ

205

2.1

300 °C

A
A

W

W/°C

Thermal Characteristics

Symbol Parameter Typ Max Unit

R

θJC

R

θCS

R

θJA

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDA16N50 / FDA16N50_F109 Rev. B1

Thermal Resistance, Junction-to-Case -- 0.6 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.24 -- °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDA16N50 FDA16N50 TO-3P - - 30
FDA16N50 FDA16N50_F109 TO-3PN - - 30

FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 500 -- -- V
Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V

I

= 250µA, Referenced to 25°C--0.5--V/°C

D

V

= 400V, TC = 125°C

DS

--

--

--

--

1

10

µA
µA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V
Static Drain-Source

On-Resistance
Forward Transconductance VDS = 40V, ID = 8.3A

Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 235 310 pF

V

= 10V, ID = 8.3A -- 0.31 0.38 Ω

GS

(Note 4)

-- 23 -- S

-- 1495 1945 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 20 30 pF

Turn-On Delay Time VDD = 250V, ID = 16A

R

= 25Ω

Turn-On Rise Time -- 150 310 ns

G

-- 40 90 ns

Turn-Off Delay Time -- 65 140 ns
Turn-Off Fall Time -- 80 170 ns
Total Gate Charge VDS = 400V, ID = 16A

V

= 10V

Gate-Source Charge -- 8.5 -- nC

GS

Gate-Drain Charge -- 14 -- nC

(Note 4, 5)

-- 32 45 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 9.2 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 37 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 16.5A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 16A

dI

/dt =100A/µs (Note 4)

Reverse Recovery Charge -- 5.0 -- µC

F

-- 490 -- ns

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 5.1mH, IAS = 16.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 16.5A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FDA16N50 / FDA16N50_F109 Rev. B1

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET

-55oC

, Drain Current [A]
I

10

10

10

D

-1

10

V

2

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

1

Bottom : 5.5 V

0

-1

10

GS

0

10

VDS, Drain-Source Voltage [V]

* Notes :

1. 250

2. T

1

10

µs Pulse Test

= 25oC

C

1

10

150oC

25oC

, Drain Current [A]

D

I

0

10

24681012

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

VGS = 10V

1

10

0.6

0.5

0.4

* Notes :

1. V

2. 250

= 40V

DS

µs Pulse Test

0.3

[Ω], Drain-Source On-Resistance

DS(ON)

0.2

R

0 5 10 15 20 25 30 35 40

VGS = 20V

* Note : TJ = 25oC

ID, Drain Current [A]

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

150oC

25oC

VSD, Source-Drain voltage [V]

* Notes :

1. V

2. 250

= 0V

GS

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4000

3000

C

oss

2000

Capacitanc es [pF]

1000

0

-1

10

C

iss

C

rss

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

* Note ;

1. V

= 0 V

GS

2. f = 1 MHz

0

10

1

10

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 10203040

VDS = 100V
VDS = 250V

VDS = 400V

* Note : ID = 16A

QG, Total Gate Charge [nC]

FDA16N50 / FDA16N50_F109 Rev. B1

3 www.fairchildsemi.com