Fairchild FCP7N60, FCPF7N60, FCPF7N60YD service manual

FCP7N60/FCPF7N60/FCPF7N60YDTU

FCP7N60/FCPF7N60/FCPF7N60YDTU

Features

•650V @TJ = 150°C

• Typ. Rds(on)=0.53Ω

• Ultra low gate charge (typ. Qg=25nC)

• Low effective output capacitance (typ. Coss.eff=60pF)

• 100% avalanche tested

• RoHS Compliant

G

D

S

TO-220

FCP Series

D

G

S

Description

SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con­duction loss, provide superior switching performance, and with­stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min­iaturization and higher efficiency.

TO-220F

FCPF Series

December 2008

SuperFET

D

{

{

z

z









z

G

{

{

z
z

z

{

{

S

TM

Absolute Maximum Ratings

Symbol Parameter FCP7N60 FCPF7N60 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

J, TSTG

T

L

*Drain current limited by maximum junction temperature

Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25°C)

- Continuous (T

Drain Current - Pulsed
Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 7A
Repetitive Avalanche Energy (Note 1) 8.3 mJ

Power Dissipation (TC = 25°C)

- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

7

4.4
21 21*

230 mJ

83

0.67

300 °C

7*

4.4*

31

0.25

Thermal Characteristics

Symbol Parameter FCP7N60 FCPF7N60 Unit

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case 1.5 4.0 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

A
A

A

W

W/°C

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCP7N60 FCP7N60 TO-220 - - 50
FCPF7N60 FCPF7N60 TO-220F - - 50
FCPF7N60 FCPF7N60YDTU TO-220F (Forming) - - 50

FCP7N60/FCPF7N60/FCPF7N60YDTU

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV
/ ΔT

BV

DS

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

C

oss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V

V

= 0V, ID = 250μA, TJ = 150°C -- 650 -- V

GS

Breakdown Voltage Temperature

DSS

Coefficient

J

Drain-Source Avalanche Breakdown
Voltage

Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V

I

= 250μA, Referenced to 25°C--0.6--V/°C

D

VGS = 0V, ID = 7A

= 480V, TC = 125°C

V

DS

-- 700 -- V

--

--

--

--

1

10

μA
μA

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250μA3.0--5.0V
Static Drain-Source

On-Resistance

= 10V, ID = 3.5A -- 0.53 0.6 Ω

V

GS

Forward Transconductance VDS = 40V, ID = 3.5A -- 6 -- S

Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 380 500 pF

f = 1.0MHz

-- 710 920 pF

Reverse Transfer Capacitance -- 34 -- pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 22 29 pF

eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 60 -- pF

Turn-On Delay Time VDD = 300V, ID = 7A

= 25Ω

R

Turn-On Rise Time -- 55 120 ns

G

-- 35 80 ns

Turn-Off Delay Time -- 75 160 ns
Turn-Off Fall Time -- 32 75 ns
Total Gate Charge VDS = 480V, ID = 7A

= 10V

V

Gate-Source Charge -- 4.2 5.5 nC

GS

Gate-Drain Charge -- 11.5 -- nC

(Note 4)

-- 23 30 nC

(Note 4)

Maximum Continuous Drain-Source Diode Forward Current -- -- 7 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 21 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 7A

/dt =100A/μs

dI

Reverse Recovery Charge -- 4.5 -- μC

F

-- 360 -- ns

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

1

6.5 V

10

6.0 V
Bottom : 5.5 V

0

10

, Drain Current [A]

D

I

-1

10

-1

10

0

10

Notes :※

1. 250μ s Pulse Test
= 25℃

2. T

C

1

10

VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

2.0

1.8

1.6

1.4

1.2

[Ω ],

1.0

DS(ON)

R

0.8

0.6

Drain-Source On-Resistance

0.4

0.2

0.0
0 5 10 15 20

VGS = 10V

VGS = 20V

Note : T※J = 25℃

ID, Drain Current [A]

1

10

150℃

0

10

, Drain Current [A]

D

I

-1

10

246810

25℃

-55℃

VGS , Gate-Source Voltage [V]

and Temperatue

1

10

0

10

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

150℃

25℃

VSD , Sourc e -Drain Voltag e [V]

Note※

1. VDS = 40V

2. 250μ s Pulse Test

Notes :※

1. VGS = 0V

2. 250μs Pulse Test

FCP7N60/FCPF7N60/FCPF7N60YDTU

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

3000

2000

C

1000

Capacitance [pF]

0

-1

10

C

iss

C

rss

VDS, Drain - Source Vo lt age [V]

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

oss

0

10

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

gd

C

= C

rss

gd

Notes :※

1. VGS = 0 V

2. f = 1 MHz

1

10

12

VDS = 100V

10

VDS = 250V

VDS = 400V

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 5 10 15 20 25

Note : I※D = 7A

QG, Total Gate Charg e [n C ]

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2

3.0

2.5

1.1

2.0

FCP7N60/FCPF7N60/FCPF7N60YDTU

1.0

, (Normalized)

BV

DSS

0.9

Notes :※

1. VGS = 0 V

2. I

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

= 250 μ A

D

1.5

, (Normalized)

DS(ON)

1.0

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

Notes :※

1. VGS = 10 V

2. I

= 3.5 A

D

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area

for FCP7N60 for FCPF7N60

2

10

1

10

0

10

, Drain Current [A]

D

I

-1

10

-2

10

10

Operation in This Area
is Limited by R

Notes :※

1. TC = 25 oC
= 150 oC

2. T

J

3. Single Pulse

0

DS(on)

1

10

VDS, Drain-Source Voltage [V]

2

10

Operation in This Area
is Limited by R

DS(on)

100 us

1 ms

1

10

10 ms

DC

2

10

3

10

, Drain Current [A]
I

10

D

10

10

0

-1

1. TC = 25 oC

2. T

3. Single Pulse

-2
0

10

Notes :※

= 150 oC

J

VDS, Drain-Source Voltage [V]

100 us

1 ms

10 ms

100 ms

DC

1

10

2

10

3

10

Figure 10. Maximum Drain Current

vs. Case Temperature

10.0

7.5

5.0

, Drain Current [A]

D

I

2.5

0.0
25 50 75 100 125 150

TC, Case Temperature [ ]℃

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1

4 www.fairchildsemi.com