Fairchild CNY174M service manual

CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers

November 2009

CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers

Features

UL recognized (File # E90700, Vol. 2)

■

VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497

■

Current transfer ratio in select groups High BV

■

MOC810XM)

■

Closely matched current transfer ratio (CTR) minimizes unit-to-unit variation.

Very low coupled capacitance along with no chip to

■

pin 6 base connection for minimum noise susceptability (CNY17FXM, MOC810XM)

: 70V minimum (CNY17XM, CNY17FXM,

CEO

Applications

Power supply regulators

■

Digital logic inputs

■

Microprocessor inputs Appliance sensor systems

■

Industrial controls

Schematics

Description

The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.

Package Outlines

ANODE

CATHODE

1

2

3

CNY17F1M/2M/3M/4M

MOC8106M/7M

6

NC

5 COLLECTOR COLLECTOR

4 EMITTERNC NC

ANODE

CATHODE

1

2

3

CNY171M/2M/3M/4M

6

BASE

5

4 EMITTER

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameters Value Units

TOTAL DEVICE

T

STG

T

OPR

T

SOL

P

EMITTER

I

V

(pk) Forward Current – Peak (1µs pulse, 300pps) 1.5 A

I

F

P

DETECTOR

I

C

V

CEO

V

ECO

P

Storage Temperature -40 to +150 °C Operating Temperature -40 to +100 °C Junction Temperature -40 to +125 ºC

J

Lead Solder Temperature 260 for 10 sec °C Total Device Power Dissipation @ 25°C (LED plus detector)

D

Derate Linearly From 25°C

Continuous Forward Current 60 mA

F

Reverse Voltage 6 V

R

LED Power Dissipation 25°C Ambient

D

Derate Linearly From 25°C

250 mW

2.94 mW/°C

120 mW

1.41 mW/°C

Continuous Collector Current 50 mA Collector-Emitter Voltage 70 V Emitter Collector Voltage 7 V Detector Power Dissipation @ 25°C

D

Derate Linearly from 25°C

150 mW

1.76 mW/°C

CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers

≤

Ω

CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers

Electrical Characteristics

(T

= 25°C Unless otherwise speciﬁed.)

A

(1)

Individual Component Characteristics

Symbol Parameters Test Conditions Device Min. Typ. Max. Units

EMITTER

V

F

C

J

I

R

DETECTOR

BV

CEO

BV

CBO

BV

ECO

I

CEO

I

CBO

C

CE

C

CB

C

EB

Input Forward Voltage I

Capacitance V Reverse Leakage

Current

Breakdown Voltage Collector to Emitter I

Collector to Base I Emitter to Collector I Leakage Current

Collector to Emitter

Collector to Base V Capacitance

Collector to Emitter V Collector to Base V Emitter to Base V

= 60mA CNY17XM,

F

1.0 1.35 1.65 V

CNY17FXM

I

= 10mA MOC810XM 1.0 1.15 1.50

F

= 0 V, f = 1.0MHz All 18 pF

F

V

= 6V All 0.001 10 µA

R

= 1.0mA, I

C

= 10µA, I

C

= 100µA, I

E

V

= 10 V, I

CE

= 10 V, I

CB

= 0, f = 1MHz All 8 pF

CE

= 0, f = 1MHz CNY171M/2M/3M/4M 20 pF

CB

= 0, f = 1MHz CNY171M/2M/3M/4M 10 pF

EB

= 0 All 70 100

F

= 0 CNY171M/2M/3M/4M 70 120

F

= 0 All 7 10

F

= 0 All 1 50 nA

F

= 0 CNY171M/2M/3M/4M 20 nA

F

V

Isolation Characteristics

Symbol Characteristic Test Conditions Min. Typ.* Max. Units

V

R C

Transfer Characteristics

Input-Output Isolation Voltage f = 60 Hz, t = 1 sec.,

ISO

Isolation Resistance V

ISO

Isolation Capacitance V

ISO

(T

= 25°C Unless otherwise speciﬁed.)

A

I

I-O

= 500 VDC

I-O

= Ø, f = 1MHz

I-O

2µA

(4)

7500 Vac(pk)

11

10

0.2 pF

(3)

Symbol DC Characteristics Test Conditions Min. Typ.* Max. Units

COUPLED

(2)

(CTR)

V

CE(sat)

*All typicals at T

Output Collector Current

Collector-Emitter Saturation Voltage

= 25°C

A

MOC8106M I

MOC8107M

CNY17F1M I

= 10mA, V

F

= 10mA, V

F

= 10V 50 150 %

CE

100 300

= 5V 40 80

CE

CNY17F2M 63 125

CNY17F3M 100 200

CNY17F4M 160 320

CNY171M 40 80

CNY172M 63 125

CNY173M 100 200

CNY174M 160 320

CNY17XM/FXM I

MOC8106M/7M I

= 2.5mA, I

C

= 500µA, I

C

= 10mA 0.4 V

F

= 5.0mA

F

CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers

Electrical Characteristics

Transfer Characteristics

Symbol AC Characteristics

(Continued)

(Continued) (T

(3)

(4)

= 25°C Unless otherwise speciﬁed.)

A

Test Conditions Min. Typ.* Max. Units

NON-SATURATED SWITCHING TIME

t

Tu r n-On Time All Devices I

on

t

Tu r n-Off Time All Devices I

off

t

Delay Time CNY17XM/XFM I

d

t

Rise Time All Devices I

r

CNY17XM/FXM I

t

Storage Time CNY17XM/FXM IF = 10mA, VCC = 5V, RL = 75Ω 4.1 µs

s

Fall Time All Devices IC = 2.0mA, VCC = 10V, RL = 100Ω 2µs

t

f

CNY17XM/FXM I

= 2.0mA, V

C

= 2.0mA, V

C

= 10mA, V

F

= 2.0mA, V

C

= 10mA, VCC = 5V, RL = 75Ω 4.0

F

= 10mA, VCC = 5V, RL = 75Ω 3.5

F

= 10V, R

CC

= 10V, R

CC

= 5V, R

CC

= 10V, R

CC

= 100 Ω

L

= 100 Ω

L

= 75 Ω

L

= 100 Ω

L

SATURATED SWITCHING TIMES

Tu r n-on Time CNY171M/F1M IF = 20mA, VCC = 5V, RL = 1kΩ 5.5 µs

t

on

CNY172M/3M/4M

I

= 10mA, VCC = 5V, RL = 1kΩ 8.0

F

CNY17F2M/F3M/F4M

t

Rise Time CNY171M/F1M IF = 20mA, VCC = 5V, RL = 1kΩ 4.0 µs

r

CNY172M/3M/4M

I

= 10mA, VCC = 5V, RL = 1kΩ 6.0

F

CNY17F2M/F3M/F4M

t

Delay Time CNY171M/F1M IF = 20mA, VCC = 5V, RL = 1kΩ 5.5 µs

d

CNY172M/3M/4M

I

= 10mA, VCC = 5V, RL = 1kΩ 8.0

F

CNY17F2M/F3M/F4M

t

Tu r n-off Time CNY171M/F1M IF = 20mA, VCE = 0.4V 34 µs

off

CNY172M/3M/4M

I

= 10mA, VCE = 0.4V 39

F

CNY17F2M/F3M/F4M

t

Fall Time CNY171M/F1M IF = 20mA, VCC = 5V, RL = 1kΩ 20.0 µs

f

CNY172M/3M/4M

I

= 10mA, VCC = 5V, RL = 1kΩ 24.0

F

CNY17F2M/F3M/F4M

t

Storage Time CNY171M/F1M IF = 20mA, VCC = 5V, RL = 1kΩ 34.0 µs

s

CNY172M/3M/4M

IF = 10mA, VCC = 5V, RL = 1kΩ 39.0

CNY17F2M/F3M/F4M

*All typicals at T

= 25°C

A

Notes:

1. Always design to the specified minimum/maximum electrical limits (where applicable).

2. Current Transfer Ratio (CTR) = I

/I

C

F

x 100%.

3. For test circuit setup and waveforms, refer to Figures 10 and 11.

4. For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common.

(1)

210µs

310µs

5.6 µs

1µs