Fairchild CNY17-1, CNY17-3, CNY17-2, CNY17-4 service manual

查询CNY-1.300供应商
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Phototransistor Optocouplers
July 2005
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Phototransistor Optocouplers
Features
CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M)
UL recognized (File # E90700) VDE recognized
– 102497 for white package – Add option V for white package (e.g., CNY17-2V-M) – File #102497 – Add option ‘300’ for black package (e.g., CNY17-2.300) – File #94766
Current transfer ratio in select groups High BV
—70V minimum
CEO
Applications
Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls
Description
The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor.
White Package (-M Suffix) Black Package (No -M Suffix)
6
6
1
1
6
6
1
6
6
1
1
Schematic
ANODE
CATHODE
1
1
2
3
6
BASE
5 COL
4 EMITTER
©2004 Fairchild Semiconductor Corporation
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
1
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Parameters Symbol Device Value Units
TOTAL DEVICE
Storage Temperature T
Operating Temperature T
Lead Solder Temperature T
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
EMITTER
Continuous Forward Current I
Reverse Voltage V
Forward Current - Peak (1 µs pulse, 300 pps) I
F
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
DETECTOR
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
STG
OPR
SOL
P
D
F
R
(pk) -M 1.5 A
P
D
P
D
All -55 to +150 °C
All -55 to +100 °C
All 260 for 10 sec °C
-M 250 mW
non -M 260
-M 2.94 mW/°C
non -M 3.50
-M 60 mA
non -M 90
All 6 V
non -M 3.0
-M 120 mW
non -M 135
-M 1.41 mW/°C
non -M 1.8
-M 150 mW
non -M 200
-M 1.76 mW/°C
non -M 2.67
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Phototransistor Optocouplers
Electrical Characteristics
(T
= 25°C Unless otherwise specified.)
A
Individual Component Characteristics
Parameters Test Conditions Symbol Device Min Typ Max Units
EMITTER
Input Forward Voltage I
Capacitance V
Reverse Leakage Current V
DETECTOR
Breakdown Voltage Collector to Emitter Collector to Base Emitter to Collector
Leakage Current Collector to Emitter Collector to Base
Capacitance Collector to Emitter Collector to Base Emitter to Base
= 60 mA V
F
I
= 10 mA non -M 1.15 1.50
F
= 0 V, f = 1.0 MHz C
F
F
J
-M 1.35 1.65 V
non -M 50 pF
-M 18
= 6 V I
R
I
= 1.0 mA, I
C
I
= 10 µA, I
C
I
= 100 µA, I
E
V
= 10 V, I
CE
V
= 10 V, I
CB
V
= 0, f = 1 MHz
CE
V
= 0, f = 1 MHz
CB
V
= 0, f = 1 MHz
EB
F
F
F
= 0
F
= 0
= 0
F
= 0 = 0
BV BV BV
I
CEO
I
CBO
C C C
R
CEO
CBO
ECO
CE
CB
EB
All 0.001 10 µA
All All All
All
70 70
100 120
7
10
15020nA
All
All All All
8 20 10
V V V
nA
pF pF pF
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
2
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Isolation Characteristics
Characteristic Test Conditions Symbol Device Min Typ** Max Units
Input-Output Isolation Voltage f = 60 Hz, t = 1 min. V
Isolation Resistance V
Isolation Capacitance V
= 500 VDC R
I-O
= Ø, f = 1 MHz C
I-O
ISO
ISO
ISO
Note * 5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second ** Typical values at T
= 25°C
A
Black Package 5300 Vac(rms)*
‘-M’ White Package 7500 Vac(pk)
All 1011
Black Package 0.5 pF
‘-M’ White Package 0.2
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Phototransistor Optocouplers
Transfer Characteristics
(T
= 25°C Unless otherwise specified.)
A
DC Characteristics Test Conditions Symbol Device Min Typ Max Units
Current Transfer Ratio, Collector to Emitter
Saturation Voltage I
I
= 10 mA, V
F
= 10 mA, I
F
= 5 V CTR CNY17-1/-1-M 40 80 %
CE
CNY17-2/-2-M 63 125
CNY17-3/-3-M 100 200
CNY17-4 160 320
= 2.5 mA V
C
CE(SAT)
All .40 V
AC Characteristics Test Conditions Symbol Device Min Typ Max Units
Non-Saturated Switching Times
Tu r n-On Time (Fig.19 and Fig.20) R
Tu r n-Off Time (Fig.19 and Fig.20) R
Delay Time (Fig.19 and Fig.20) I
Rise Time (Fig.19 and Fig.20) I
Storage Time (Fig.19 and Fig.20) I
Fall Time (Fig.19 and Fig.20) I
Saturated Switching Times
Tu r n-On Time (Fig.19 and Fig.20) I
Rise-Time (Fig.19 and Fig.20) I
Delay Time (Fig.19 and Fig.20) I
Tu r n-Off Time (Fig.19 and Fig.20) IF = 20 mA, VCE = 0.4 V t
= 100 Ω , I
L
= 100 Ω , I
L
= 10 mA, V
F
= 10 mA, V
F
= 10 mA, V
F
= 10 mA, V
F
= 20 mA, V
F
I
= 10 mA, V
F
= 2 mA, V
C
= 2 mA, V
C
= 5 V, R
CC
= 5 V, R
CC
= 5 V, R
CC
= 5 V, R
CC
= 0.4 V t
CE
= 0.4 V CNY17-2,
CE
= 10 V t
CC
= 10 V t
CC
= 75 Ω
L
= 75 Ω
L
= 75 Ω
L
= 75 Ω
L
on
off
t
d
t
r
t
s
t
f
on
non -M 10 µs
non -M 10 µs
CNY17-1 5.5 µs
CNY17-3,
-M 5.6 µs
-M 4.0 µs
-M 4.1 µs
-M 3.5 µs
CNY17-4
= 20 mA, V
F
I
= 10 mA, V
F
= 0.4 V t
CE
= 0.4 V CNY17-2,
CE
r
CNY17-1 4.0 µs
CNY17-3,
CNY17-4
I
= 20 mA, V
F
I
= 10 mA, V
F
= 5 V, R
CC
= 5 V, R
CC
= 1 K Ω
L
= 1 K Ω
L
CNY17-1-M 4.0
CNY17-2-M,
CNY17-3-M
= 20 mA, V
F
I
= 10 mA, V
F
= 5 V, R
CC
= 5 V, R
CC
=1 K Ω
L
=1 K Ω
L
t
d
CNY17-1-M 5.5 µs
CNY17-2,
CNY17-3
off
CNY17-1 34.0 ms
IF = 10 mA, VCE = 0.4 V CNY17-2,
CNY17-3,
CNY17-4
8.0
6.0
6.0
8.0
39.0
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
3
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CNY17-1, CNY17-3, CNY17-2, CNY17-4 Phototransistor Optocouplers
Transfer Characteristics (T
= 25°C Unless otherwise specified.) (Continued)
A
DC Characteristics Test Conditions Symbol Device Min Typ Max Units
Fall-Time (Fig. 19 and Fig. 20) IF = 20 mA, VCE = 0.4V t
IF = 10 mA, VCE = 0.4V CNY17-2,
IF = 20 mA, VCC = 5V, RL = 1K CNY17-1-M 20.0
IF = 10 mA, VCC = 5V, RL = 1K CNY17-2-M,
Storage Time (Fig. 19 and Fig.
20)
IF = 20 mA, VCC = 5V, RL = 1K t
IF = 10 mA, VCC = 5V, RL = 1K CNY17-2-M,
f
s
CNY17-1 20.0 µs
24.0
CNY17-3,
CNY17-4
24.0
CNY17-3-M,
CNY17-1-M 34.0 µs
39.0
CNY17-3-M,
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
4 www.fairchildsemi.com
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Phototransistor Optocouplers
Fig.1 Normalized CTR vs. Forward Current
1.4 VCE = 5.0V
= 25˚C
T
A
1.2
1.0
0.8
0.6
NORMALIZED CTR
0.4
0.2
0.0
051015 20
(Black Package)
Normalized to I
IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
(Black Package)
1.6
1.4
1.2
1.0
IF = 10 mA
= 10 mA
F
Fig.2 Normalized CTR vs. Forward Current
(White Package)
1.6 VCE = 5.0V
= 25˚C
T
A
1.4
1.2
1.0
0.8
0.6
0.4
NORMALIZED CTR
0.2
0.0
02468101214161820
Normalized to
= 10 mA
I
F
Fig. 4 Normalized CTR vs. Ambient Temperature
(White Package)
1.4
1.2
1.0
0.8
IF = 5 mA IF = 5 mA
IF = 10 mA
0.8
NORMALIZED CTR
0.6 Normalized to
= 10 mA
I
F
= 25˚C
T
A
0.4
-75 -50 -25 0 25 50 75 100 125
IF = 20 mA
TA - AMBIENT TEMPERATURE (˚C) TA - AMBIENT TEMPERATURE (˚C)
Fig. 5 CTR vs. RBE (Unsaturated)
(Black Package)
1.0
)
0.9
0.8
RBE(OPEN)
0.7
/ CTR
0.6
RBE
0.5
0.4
0.3
0.2
0.1
0.0
NORMALIZED CTR ( CTR
10 100 1000
IF = 20 mA
IF = 10 mA
IF = 5 mA
RBE- BASE RESISTANCE (kΩ) RBE- BASE RESISTANCE (kΩ)
VCE= 5.0 V
0.6
IF = 20 mA
NORMALIZED CTR
0.4 Normalized to
= 10 mA
I
F
= 25˚C
T
A
0.2
-60 -40 -20
0
20 40 60 80 100
Fig. 6 CTR vs. RBE (Unsaturated)
(White Package)
)
1.0
0.9 IF = 20 mA
0.8
RBE(OPEN)
0.7
/ CTR
0.6
RBE
0.5
0.4
0.3
0.2
0.1
0.0
NORMALIZED CTR ( CTR
10 100 1000
IF = 10 mA
IF = 5 mA
VCE= 5.0 V
CNY17-1, CNY17-3, CNY17-2, CNY17-4 Rev. 1.0.2
5 www.fairchildsemi.com
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