Fairchild CNY172, CNY173, CNY174, CNY17F1, CNY17F2 service manual

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CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers

October 2005

CNY171, CNY172, CNY173, CNY174, CNY17F1, CNY17F2, CNY17F3, CNY17F4, MOC8101, MOC8102, MOC8103, MOC8104, MOC8105, MOC8106, MOC8107, MOC8108

Phototransistor Optocouplers

Features

CNY171/2/3/4 and CNY17F1/2/3/4 are also available in white package by specifying M sufﬁx (eg. CNY17F2M)

UL recognized (File # E90700) VDE recognized

– Add option V for white package (e.g., CNY17F2VM) – File #102497 – Add option ‘300’ for black package (e.g., CNY17F2300) – File #94766

Current transfer ratio in select groups High BV

MOC8106/7/8) Closely matched current transfer ratio (CTR) minimizes unit-

to-unit variation. Very low coupled capacitance along with no chip to pin 6

base connection for minimum noise susceptability (CNY17FX/M, MOC810X)

—70V minimum (CNY17X/M, CNY17FX/M,

CEO

Applications

Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls

Description

The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.

White Package (-M Sufﬁx) Black Package (No -M Sufﬁx)

6

1

6

1

6

1

Schematic

1

ANODE

CATHODE

CNY17X, CNY17FX, MOC810X Rev. 1.0.5

2

3

CNY17F1/2/3/4 CNY171/2/3/4 CNY17F1M/2M/3M/4M MOC8101/2/3/4/5/6/7/8

6

1

6

NC

5 COLLECTOR COLLECTOR

4 EMITTERNC NC

CATHODE

1

ANODE

1

2

3

CNY17F1M/2M/3M/4M

6

BASE

5

4EMITTER

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Absolute Maximum Ratings

Parameters Symbol Device Value Units

TOTAL DEVICE

Storage Temperature T

Operating Temperature T

Lead Solder Temperature T

Total Device Power Dissipation @ 25°C (LED plus detector)

Derate Linearly From 25°C

EMITTER

Continuous Forward Current I

Reverse Voltage V

Forward Current - Peak (1 µs pulse, 300 pps) I

F

LED Power Dissipation 25°C Ambient

Derate Linearly From 25°C

DETECTOR

Continuous Collector Current I

Collector-Emitter Voltage V

Emitter Collector Voltage V

Detector Power Dissipation @ 25°C

Derate Linearly from 25°C

STG

OPR

SOL

P

D

F

R

(pk) M 1.5 A

P

D

C

CEO

ECO

P

CNY17X/M, CNY17FX/M,

D

M -40 to +150 °C

non M -55 to +150

M -40 to +100 °C

non M -55 to +100

All 260 for 10 sec °C

M 250 mW

non M 250

M 2.94 mW/°C

non M 3.30

M60mA

non M 100

All 6 V

non M 1.0

M 120 mW

non M 150

M 1.41 mW/°C

non M 1.8

All 50 mA

70 V

MOC8106/7/8

MOC8101/2/3/4/5 30 V

All 7 V

M 150 mW

non M 150

M 1.76 mW/°C

non M 2.0

CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers

Electrical Characteristics

(T

= 25°C Unless otherwise speciﬁed.)

A

(1)

Individual Component Characteristics

Parameters Test Conditions Symbol Device Min Typ Max Units

EMITTER

Input Forward Voltage I

Capacitance V

Reverse Leakage Current V

CNY17X, CNY17FX, MOC810X Rev. 1.0.5

= 60 mA V

F

CNY17FX/M

1.0 1.35 1.65 V

CNY17X/M

I

= 10 mA MOC810X 1.0 1.15 1.50

F

= 0 V, f = 1.0 MHz C

F

= 6 V I

R

J

R

All 18 pF

All 0.001 10 µA

2

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Ω

Individual Component Characteristics (Continued)

Parameters Test Conditions Symbol Device Min Typ Max Units

DETECTOR

Breakdown Voltage Collector to Emitter I

Collector to Base I

Emitter to Collector I

Leakage Current Collector to Emitter V

Collector to Base V

Capacitance Collector to Emitter V

Collector to Base V

Emitter to Base V

= 1.0 mA, I

C

= 10 µA, I

C

= 100 µA, I

E

= 10 V, I

CE

= 10 V, I

CB

= 0, f = 1 MHz C

CE

= 0, f = 1 MHz C

CB

= 0, f = 1 MHz C

EB

= 0 BV

F

= 0 BV

F

= 0 BV

F

= 0 I

F

= 0 I

F

CEO

CBO

MOC8101/2/3/4/5 30 100 V

CEO

MOC8106/7/8

70 100

CNY17F1/2/3/4/M

CNY171/2/3/4/M

CBO

ECO

CNY171/2/3/4/M 70 120

All 7 10

All 1 50 nA

CNY171/2/3/4/M 20 nA

CE

CB

EB

All 8 pF

CNY171/2/3/4/M 20 pF

CNY171/2/3/4/M 10 pF

CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers

Isolation Characteristics

Characteristic Test Conditions Symbol Device Min Typ** Max Units

Input-Output Isolation Voltage f = 60 Hz, t = 1 min. (4) V

ISO

f = 60 Hz, t = 1 sec. (4) ‘M’ White Package 7500 Vac(pk)

Isolation Resistance V

Isolation Capacitance V

= 500 VDC (4) R

I-O

= Ø, f = 1 MHz (4) C

I-O

ISO

Note * 5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second ** Typical values at T

= 25°C

A

Black Package 5300 Vac(rms)*

All 10

11

Black Package 0.5 pF

‘M’ White Package 0.2

CNY17X, CNY17FX, MOC810X Rev. 1.0.5

3

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CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers

Transfer Characteristics

(T

= 25°C Unless otherwise speciﬁed.)

A

(1)

DC Characteristics Test Conditions Symbol Min Typ Max Units

Coupled

CE(sat)

(2)

50—80 %

——0.4 V

Output Collector Current

Collector-Emitter Saturation Voltage

MOC8101 (I

= 10 mA, V

F

= 10 V) (CTR)

CE

MOC8102 73 — 117

MOC8103 108 — 173

MOC8104 160 — 256

MOC8105 65 — 133

MOC8106 50 — 150

MOC8107 100 — 300

MOC8108 250 — 600

CNY17F1/1M (I

= 10 mA, V

F

= 5 V) 40 — 80

CE

CNY17F2/2M 63 — 125

CNY17F3/3M 100 — 200

CNY17F4/4M 160 — 320

CNY171/1M 40 — 80

CNY172/2M 63 — 125

CNY173/3M 100 — 200

CNY174/4M 160 — 320

CNY17XM/FXM (I

MOC8101/2/3/4/5/ 6/7/8

CNY17X/FX (I

= 2.5 mA, I

C

(I

= 500 µA, I

C

= 10 mA, I

F

= 10 mA) V

F

= 5.0 mA)

F

= 2.5 mA) — — 0.3 V

C

AC Characteristics

(3)

Non-Saturated Switching Time

Tu r n-On Time MOC8101/2/3/4/5 (I

MOC8106/7/8 —

CNY17X/FX 10

Tu r n-Off Time MOC8101/2/3/4/5 (I

MOC8106/7/8 —

CNY17X/FX 10

Delay Time

Rise Time

CNY17XM/FXM

All Devices

CNY17XM/FXM

Storage Time CNY17XM/FXM (I

Fall Time All Devices (I

CNY17XM/FXM (I

C

(I

C

= 2.0 mA, V

(I

= 10 mA, V

F

= 2.0 mA, V

(I

= 10 mA, V

F

= 10 mA, V

F

= 2.0 mA, V

= 10 mA, V

F

Test Conditions Symbol Min Typ* Max Units

= 10 V, R

CC

= 10 V, R

CC

= 10 V, R

CC

= 10 V, R

CC

= 100 Ω )t

L

= 100 Ω )t

L

= 5 V, R

= 75 Ω )t

L

= 100 Ω )t

L

= 75 Ω )——4.0

L

= 75 Ω )t

L

= 100 Ω )t

L

= 75 Ω )——3.5

L

on

off

d

r

s

f

—220µs

—320

——5.6 µs

—1—µs

——4.1

—2—

µs

CNY17X, CNY17FX, MOC810X Rev. 1.0.5

4

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CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers

Transfer Characteristics (continued) (T

AC Characteristics

(3)

= 25°C Unless otherwise speciﬁed.)

A

Test Conditions Symbol Min Typ Max Units

Saturated Switching Times

Tu r n-on Time CNY171/F1 (IF = 20 mA, VCE = 0.4 V) t

CNY172/F2 CNY173/F3 CNY174/F4

Rise Time CNY171/F1 (IF = 20 mA, VCE = 0.4 V) t

CNY172/F1 CNY173/F3 CNY174/F4

CNY171M/F1M (IF = 20 mA, VCC = 5 V, RL = 1 KΩ)——4.0

CNY172M/3M/4M

CNY17F2M/F3M/F4M

Delay Time CNY171M/F1M (IF = 20 mA, VCC = 5 V, RL =1 KΩ)

CNY172M/3M/4M

CNY17F2M/F3M/F4M

Tu r n-off Time CNY171/F1 (IF = 20 mA, VCE = 0.4 V) t

CNY172/F2 CNY173/F3 CNY174/F4

Fall Time CNY171/F1 (IF = 20 mA, VCE = 0.4 V) t

CNY172/F2 CNY173/F3 CNY174/F4

CNY171M/F1M (IF = 20 mA, VCC = 5V, RL = 1KΩ)——20.0

CNY172M/3M/4M

CNY17F2M/F3M/F4M

Storage Time CNY171M/F1M (I

CNY172M/3M/4M

CNY17F2M/F3M/F4M

** All typicals at TA = 25°C

(IF = 10 mA, VCC = 5 V, RL = 1 KΩ)——6.0

(IF = 10 mA, VCC = 5 V, RL =1 KΩ)——8.0

(IF = 10 mA, VCC = 5V, RL = 1KΩ)——24.0

(IF = 10 mA, VCC = 5V, RL = 1KΩ)——39.0

(IF = 10 mA, VCE = 0.4 V) — — 8.0

(IF = 10 mA, VCE = 0.4 V) — — 6.0

(IF = 10 mA, VCE = 0.4 V) — — 39

(IF = 10 mA, VCE = 0.4 V) — — 24

= 20 mA, VCC = 5V, RL = 1KΩ)

F

(1)

on

r

t

d

off

f

t

s

——5.5 µs

——4.0 µs

——5.5 µs

——34µs

——20µs

µs

——34.0 µs

Notes:

1. Always design to the speciﬁed minimum/maximum electrical limits (where applicable).

2. Current Transfer Ratio (CTR) = IC/IF x 100%.

3. For test circuit setup and waveforms, refer to Figures 20. 4, For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common.

CNY17X, CNY17FX, MOC810X Rev. 1.0.5

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