Datasheet BC856AMTF, BC856BMTF, BC856CMTF, BC857AMTF, BC857BMTF Datasheet (Fairchild) [ru]

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BC856- BC860
PNP Epitaxial Silicon Transistor Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
August 2006
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
BC856- BC860 PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* T
Collector-Base Voltage
: BC856 : BC857/860 : BC858/859
-80
-50
-30
Collector-Emitter Voltage
: BC856 : BC857/860 : BC858/859
-65
-45
-30 Emitter-Base Voltage -5 V Collector Current (DC) -100 mA Collector Power Dissipation 310 mW Junction Temperature 150 °C Storage Temperature -65 ~ 150 °C
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
h
FE
V
CE
V
BE
V
BE
f
T
C
ob
NF Noise Figure
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector Cut-off Current VCB= -30V, IE=0 -15 nA DC Current Gain VCE= -5V, IC= -2mA 110 800
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
(sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
(on) Base-Emitter On Voltage VCE= -5V, IC= -2mA
-600 -660 -750
-90
-250
-700
-900
VCE= -5V, IC= -10mA
Current Gain Bandwidth Product VCE= -5V, IC= -10mA
150 MHz
f=100MHz
Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF
: BC856/857/858
: BC859/860 : BC859
: BC860
VCE= -5V, IC= -200µA RG=2KΩ, f=1KHz
VCE= -5V, IC= -200µA RG=2KΩ, f=30~15000Hz
2 1
1.2
1.2
-300
-650
-800
10
4 4
2
mV mV
mV mV
mV mV
V V V
V V V
dB dB
dB dB
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
BC856- BC860 Rev. B
hFE Classification
Classification A B C
h
FE
110 ~ 220 200 ~ 450 420 ~ 800
Ordering Information
Device(note1) Device Marking Package Packing Method Qty(pcs) Pin Difinitions
BC856AMTF 9AA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC856BMTF 9AB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC856CMTF 9AC SOT-23 Ta pe & Reel 3000 1.Base 2.Emitter 3.Collector BC857AMTF 9BA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC857BMTF 9BB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC857CMTF 9BC SOT-23 Ta pe & Reel 3000 1.Base 2.Emitter 3.Collector BC858AMTF 9CA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC858BMTF 9CB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC858CMTF 9CC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC859AMTF 9DA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC859BMTF 9DB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC859CMTF 9DC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC860AMTF 9EA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC860BMTF 9EB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC860CMTF 9EC SOT-23 Ta pe & Reel 3000 1.Base 2.Emitter 3.Collector
Note1 : Affix “-A,-B,-C” means hFE classification. Affix “-M” means the matte type package. Affix “-TF” means the tape & reel type packing .
BC856- BC860 PNP Epitaxial Silicon Transistor
BC856- BC860 Rev. B
2 www.fairchildsemi.com
Typical Performance Characteristics
BC856- BC860 PNP Epitaxial Silicon Transistor
-50
-45
-40
-35
-30
-25
-20
-15
-10
[mA], COLLECTOR CURRENT
C
I
-5
-0
-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -2 0
IB = - 400µA
IB = - 350µA
IB = - 300µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
IB = - 250µA
IB = - 200µA
IB = - 150µA
IB = - 100µA
IB = - 50µA
IC = 10 I
1000
100
, DC CURRENT GAIN
FE
h
10
-0.1 -1 -10 -100
VCE = - 5V
IC[mA], COLLECTOR CURRENT
-100
B
-10
-1
[mA], COLLECTOR CURRENT
C
I
-0.1
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VCE = - 5V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
[pF], CAPACITANCE
ob
C
1
-1 -10 -100
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
BC856- BC860 Rev. B
f=1MHz IE=0
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Base-Emitter On Voltage
1000
f=1MHz IE=0
100
10
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
-1 -10
IC[mA], COLLECTOR CURRENT
3 www.fairchildsemi.com
Mechanical Dimensions
0
F
3
N
0.40
±0.03
BC856- BC860 PNP Epitaxial Silicon Transistor
SOT-23
0.20 MI
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.1
0.38 RE
+0.05
0.12
–0.02
BC856- BC860 Rev. B
Dimensions in Millimeters
4 www.fairchildsemi.com
TRADEMARKS
The following are registered and unregistered trademark s Fairchild Semic onduct or owns or is autho rized to use an d is not inten ded to be an exhaustive list of all such trademarks.
ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™
2
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2
I
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Across the board. Around the world.™ The Power Franchise
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SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic
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Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONV EY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE­CIFICALLY THE WAR RAN TY THE REIN, WH ICH COVERS THESE PRODUCTS.
BC856- BC860 PNP Epitaxial Silicon Transistor
BC856- BC860 PNP Epitaxial Silicon Transistor
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reaso nably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
Preliminary First Prod uction This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
product development. Specifications may change in any manner without notice.
supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to im prove design.
Semiconductor reserves the right to make changes at any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference informatio n only.
BC856- BC860 Rev. B
Rev. I20
5 www.fairchildsemi.com
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