BC856- BC860
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
August 2006
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
BC856- BC860 PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* T
Collector-Base Voltage
: BC856
: BC857/860
: BC858/859
-80
-50
-30
Collector-Emitter Voltage
: BC856
: BC857/860
: BC858/859
-65
-45
-30
Emitter-Base Voltage -5 V
Collector Current (DC) -100 mA
Collector Power Dissipation 310 mW
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
h
FE
V
CE
V
BE
V
BE
f
T
C
ob
NF Noise Figure
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector Cut-off Current VCB= -30V, IE=0 -15 nA
DC Current Gain VCE= -5V, IC= -2mA 110 800
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
(sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
(on) Base-Emitter On Voltage VCE= -5V, IC= -2mA
-600 -660 -750
-90
-250
-700
-900
VCE= -5V, IC= -10mA
Current Gain Bandwidth Product VCE= -5V, IC= -10mA
150 MHz
f=100MHz
Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF
: BC856/857/858
: BC859/860
: BC859
: BC860
VCE= -5V, IC= -200µA
RG=2KΩ, f=1KHz
VCE= -5V, IC= -200µA
RG=2KΩ, f=30~15000Hz
2
1
1.2
1.2
-300
-650
-800
10
4
4
2
mV
mV
mV
mV
mV
mV
V
V
V
V
V
V
dB
dB
dB
dB
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
BC856- BC860 Rev. B
hFE Classification
Classification A B C
h
FE
110 ~ 220 200 ~ 450 420 ~ 800
Ordering Information
Device(note1) Device Marking Package Packing Method Qty(pcs) Pin Difinitions
BC856AMTF 9AA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC856BMTF 9AB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC856CMTF 9AC SOT-23 Ta pe & Reel 3000 1.Base 2.Emitter 3.Collector
BC857AMTF 9BA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC857BMTF 9BB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC857CMTF 9BC SOT-23 Ta pe & Reel 3000 1.Base 2.Emitter 3.Collector
BC858AMTF 9CA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC858BMTF 9CB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC858CMTF 9CC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC859AMTF 9DA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC859BMTF 9DB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC859CMTF 9DC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC860AMTF 9EA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC860BMTF 9EB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC860CMTF 9EC SOT-23 Ta pe & Reel 3000 1.Base 2.Emitter 3.Collector
Note1 : Affix “-A,-B,-C” means hFE classification.
Affix “-M” means the matte type package.
Affix “-TF” means the tape & reel type packing .
BC856- BC860 PNP Epitaxial Silicon Transistor
BC856- BC860 Rev. B
2 www.fairchildsemi.com