BAS40SL
Schottky Barrier Diodes
Features
• Low Forward Voltage Drop
• Fast switching
• Very Small and Thin SMD package
• Profile height, 0.43mm max
• Footprint, 1.0 x 0.6mm
BAS40SL — Schottky Barrier Diodes
October 2010
Connection Diagram
2
SOD-923F
Marking: AA
Absolute Maximum Ratings * T
1
= 25°C unless otherwise noted
A
2
1
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
P
D
T
J, TSTG
* These ratings are limiting values above which the serviceability of the diode may be impaired.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Maximum Repetitive Reverse Voltage 40 V
Average Rectified Forward Current 100 mA
Forward Surge Current
600 mA
(8.3mS Single Half Sine-Wave)
Power Dissipation 227 mW
Operating Junction & Storage Temperature Range -55 to +150 °C
Thermal Characteristics
Symbol Parameter Value Unit
R
θJA
* Minimum land pad.
Thermal Resistance, Junction to Ambient * 550 °C/W
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min. Max. Unit
V
R
V
F
I
R
trr Reverse Recovery Time I
C
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAS40SL Rev. A2 1
Breakdown Voltage IR = 10μA40 V
Forward Voltage IF = 1mA
IF = 40mA
380
1000
mV
mV
Reverse Leakage VR = 30V 0.2 μA
= IR= 10mA, irr = 0.1I
F
Junction Capacitance VR = 0, f = 1.0MHz 5.0 pF
j
R
8.0 nS
Typical Performance Characteristics
BAS40SL — Schottky Barrier Diodes
Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current
100
TJ=150 oC
[mA]
F
TJ=25 oC
10
Forward Current, I
1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Forward Voltage Drop, VF[V]
TJ=85 oC
100000
10000
[nA]
R
1000
100
10
Reverse Current, I
1
10 20 30 40
Reverse Voltage, VR[V]
TJ=150 oC
TJ=85 oC
TJ=25 oC
Figure 3. Junction Capacitance Figure 4. Power Derating
5
f=1mhz
4
[pF]
J
3
2
Juntion Capacitance, C
1
0246810
Reverse Voltage, VR[V]
300
250
200
150
100
50
Power Dissipation, [mW]
0
0 25 50 75 100 125 150
Ambient Temperature, Ta[oC]
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAS40SL Rev. A2 2
Physical Dimensions
BAS40SL — Schottky Barrier Diodes
SOD-923F
2X
0.27
0.17
0.08
A
A B
0.55 - 0.65
0.05 - 0.15
TOP VIEW
SIDE VIEW
0.90 - 1.10
0.75 - 0.85
B
0.08 - 0.14
0.26
0.10
0.15
0.05
0.82
0.32
0.28
LAND PATTERN RECOMMENDATION
0.43 Max
0.39 - 0.41
SEATING PLANE
END VIEW
0.05
0.00
BOTTOM VIEW
NOTES:
A) THIS PACKAGE DOES NOT COMPLY
TO ANY CURRENT PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) BODY DIMENSIONS ARE INCLUSIVE OF BURRS, AND
MOLD FLASH.
D) DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994
E) LANDPATTERN BASED ON NOMINAL PACKAGE
DIMENSIONS.
F) DRAWING FILE NAME : SOD923F1REV2
Dimensions in Millimeters
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAS40SL Rev. A2 3
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I50
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