
BAS16
BAS16
3
3
3
A6
Connection Diagram
2
1
SOT-23
Small Signal Diode
Absolute Maximum Ratings* T
Symbol
V
Maximum Repetitive Reverse Voltage 85 V
RRM
I
Average Rectified Forward Current 200 mA
F(AV)
I
Non-repetitive Peak Forward Surge Current
FSM
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
T
TJ
stg
Storage Temperature Range -55 to +150
Operating Junction Temperature -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD Power Dissipation 350 mW
R
θJA
Thermal Resistance, Junction to Ambient 357
Parameter
Parameter
1
= 25°C unless otherwise noted
A
2
1
Value
1.0
2.0
Value
2NC
Units
A
A
C
°
C
°
Units
C/W
°
Electrical Characteristics T
Symbol
VR Breakdown Voltage
VF Forward Voltage IF = 1.0 mA
IR Reverse Current
CT Total Capacitance
trr
2001 Fairchild Semiconductor Corporation
Reverse Recovery Time I
Parameter
= 25°C unless otherwise noted
A
Test Conditions
= 5.0 µA
I
R
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
F
= 75 V
V
R
= 25 V, TA = 150°C
V
R
V
= 75 V, TA = 150°C
R
V
= 0, f = 1.0 MHz
R
= IR = 10 mA, I
F
= 100 Ω
R
L
= 1.0 mA,
RR
Min
85
Max Units
715
855
1.0
1.25
1.0
30
50
2.0 pF
6.0 ns
V
mV
mV
V
V
A
µ
A
µ
A
µ
BAS16, Rev. C

T ypical Characteristics
BAS16
Small Signal Diode
(continued)
150
Ta= 25 °C
[v]
R
140
130
120
Reverse Voltage, V
R
110
1 2 3 5 10 20 30 50 100
Reverse Current, IR [uA]
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
485
Ta= 25°C
450
[mV]
F
400
350
300
Forward Voltage, V
250
F
225
1 2 3 5 10 20 30 50 100
Forward Current, IF [uA]
F
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100 uA
Ta= 25°C
300
250
[nA]
R
200
150
100
50
Reverse Current, I
0
10 20 30 50 70 100
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Reverse Voltage, VR [v]
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
725
Ta= 25°C
700
[mV]
F
650
600
550
500
Forward Voltage, V
F
450
0.1 0.2 0.3 0.5 1 2 3 5 10
Forward Current, IF [mA]
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
1.5
Ta= 25°C
1.4
[V]
F
1.2
1
0.8
Forward Voltage, V
F
0.6
10 20 30 50 100 200 300 500
Forward Current, IF [mA]
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 800 mA
1.3
Ta= 25°C
[pF]
T
1.2
1.1
Total Capacitance, C
1
02468101214
Reverse Voltage [V]
Figure 6. Total Capacitance
15
BAS16, Rev. C

Small Signal Diode
(continued)
BAS16
T ypical Characteristics
4
Ta= 25°C
[ns]
rr
3.5
3
2.5
2
1.5
Reverse Recovery Time, t
1
10 20 30 40 50 60
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
Reverse Current [mA]
(continued)
500
400
400
300
300
200
200
Current [mA]
100
100
D
0
0
050100150
050100150
I - FORWARD CURRE
R
I
F(AV)
- AVERAGE RECTIFIED CURRENT - mA
I
o - AVERAGE RECTIFIED CURRE
Ambient Temperature, TA [ C]
A
NT STEADY
Figure 7. Reverse Recovery Time Figure 8. Average Rectified Current (I
vs Reverse Current versus Ambient Temperature (T
TRR - IR 10 mA vs 60 mA
500
400
[mW]
D
300
DO- 3 5 P kg
S
TA
TE - mA
NT - mA
o
o
F(AV)
)
A
)
SOT-23 Pkg
200
100
Power Dissipation, P
0
0 50 100 150 200
Average Temperature, IO ( C)
o
Figrue 9. Power Derating Curve
BAS16, Rev. C

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Advance Information
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Rev. H4