June 1988
Revised September 2000
74F219
64-Bit Random Access Memory with 3-STATE Outputs
74F219 64-Bit Random Access Memory with 3-STATE Outputs
General Description
The 74F219 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fu lly decoded on-chip. The outputs
are 3-STATE and are i n the high-impedance sta te whenever the Chip Sele ct (CS
active only in the Read mode. This device is sim ilar to the
74F189 but features non-inverting, rather than inverting,
data outputs.
) input is HIGH. The outputs are
Features
■ 3-STATE outputs for data bus applications
■ Buffered inputs minimize loading
■ Address decoding on-chip
■ Diode clamped inputs minimize ringing
■ Available in SOIC (300 mil only)
Ordering Code:
Order Number Package Number Package Description
74F219SC M16B 16-Lead Small Outline Intergrated Circuit (SOIC), JEDEC MS-013, 0.300 Wide
74F219SJ M16D 16-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide
74F219PC N16E 16-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300 Wide
Devices also availab le in Tape and Reel. Specify by appending the suffix letter “X” to the o rdering code.
Logic Symbol Connection Diagram
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Unit Loading/Fan Out
74F219
Pin Names Description
A0–A
3
CS
WE
D
0–D3
O
0–O3
Function Table
CS
L L Write High Impedance
L H Read True Stored Data
H X Inhibit High Impedance
H = HIGH Voltage Level
L = LOW Voltage Level
X = Immaterial
Block Diagram
U.L.
HIGH/LOW
Address Inputs 1.0/1.0 20 µA/−0.6 mA
Chip Select Input (Active LOW) 1.0/2.0 20 µA/−1.2 mA
Write Enable Input (Active LOW) 1.0/1.0 20 µA/−0.6 mA
Data Inputs 1.0/1.0 20 µA/−0.6 mA
3-STATE Data Outputs 150/40 (33.3) −3 mA/24 mA (20 mA)
Inputs
WE
Operation Condition of Outputs
Input I
Output I
IH/IIL
OH/IOL
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Absolute Maximum Ratings(Note 1) Recommended Operating
Storage Temperature −65°C to +150°C
Ambient Temperature under Bias
Junction Temperature under Bias
Pin Potential to Ground Pin −0.5V to +7.0V
V
CC
Input Voltage (Note 2)
Input Current (Note 2)
−55°C to +125°C
−55°C to +150°C
−0.5V to +7.0V
−30 mA to +5.0 mA
Voltage Applied to Output
in HIGH State (with V
Standard Output
CC
= 0V)
−0.5V to V
3-STATE Output −0.5V to +5.5V
Current Applied to Output
in LOW State (Max) twice the rated I
OL
Conditions
Free Air Ambient Temperature 0
Supply Voltage
Note 1: Absolute maximum ratings are values beyond which the device
may be damaged or have its useful life impaired . Functional operation
CC
under these conditions is not implied.
Note 2: Either voltage lim it or c urrent limit is sufficient to protect inputs.
(mA)
DC Electrical Characteristics
Symbol Parameter
V
V
V
V
V
I
IH
I
BVI
I
CEX
V
I
OD
I
IL
I
OZH
I
OZL
I
OS
I
ZZ
I
CC
IH
IL
CD
OH
OL
ID
Input HIGH Voltage 2.0 V Recognized as a HIGH Signal
Input LOW Voltage 0.8 V Recognized as a LOW Signal
Input Clamp Diode Voltage −1.2 V Min IIN = −18 mA
Output HIGH 10% V
Voltage 10% V
Output LOW 10% V
Voltage
Input HIGH
Current
Input HIGH Current
Breakdown Test
Output HIGH
Leakage Current
Input Leakage
Test All Other Pins Grounded
Output Leakage
Circuit Current All Other Pins Grounded
Input LOW −0.6
Current −1.2 VIN = 0.5V (CS)
Output Leakage Current 50 µAMaxV
Output Leakage Current −50 µAMaxV
Output Short-Circuit Current −60 −150 mA Max V
Bus Drainage Test 500 µA0.0VV
Power Supply Current 37 55 mA Max
5% V
5% V
Min
Typ Max
2.5
CC
2.4 IOH = −3 mA
CC
2.7 IOH = −1 mA
CC
2.7 IOH = −3 mA
CC
CC
4.75 V 0.0
3.75 µA0.0
Units
0.5 V Min IOL = 24 mA
5.0 µAMaxVIN = 2.7V
7.0 µAMaxVIN = 7.0V
50 µAMaxV
mA Max
V
CC
IOH = −1 mA
VMin
IID = 1.9 µA
V
VIN = 0.5V (An, WE, Dn)
OUT
IOD
OUT
OUT
OUT
OUT
+4.5V to +5.5V
Conditions
= V
CC
= 150 mV
= 2.7V
= 0.5V
= 0V
= 5.25V
74F219
°C to +70°C
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