Fairchild 74F1056 service manual
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74F1056
8-Bit Schottky Barrier Diode Array
74F1056 8-Bit Schottky Barrier Diode Array
December 1993
Revised August 1999
General Description
The 74F1056 is an 8-bit Schottky barrier diode array
designed to be employed as termination on the inputs to
memory bus lines or CLOCK lines. This device is designed
to suppress negative transien ts caused by line re flections,
switching noise and crosstalk.
Features
■ 8-Bit array structure designed to suppress negative
transients
■ Guaranteed ESD protec tion (HBM) in excess of 4 kV
■ Common anode shared by all eight diodes
■ Broadside pinout for ease of bus routing
Ordering Code:
Order Number Package Number Package Description
74F1056SC M16A 16-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-012, 0.150 Narrow
Devices also availab le in Tape and Reel. Specify by appending th e s uffix let t er “X” to the ordering cod e.
Connection Diagram Schematic Diagram
© 1999 Fairchild Semiconductor Corporation DS011655 www.fairchildsemi.com
Absolute Maximum Ratings(Note 1)
Storage Temperature −65°C to +150°C
Operating Free-Air Temperature 0°C to 70°C
74F1056
Steady State Reverse Voltage, (V
)7.0V
R
Continuous Total Power Dissipation at or below
25°C Free-Air Temperature, (P
Continuous Forward Current, (I
) 750 mW
D
)
f
Any Output Pin to GND 50 mA
Total Through All GND Pins 170 mA
Repetitive Peak Forward Current, lfp (Note 2)
Any Output Pin to GND 300 mA
Total Through All GND Pins 1.2A
Note 1: Absolute maximum rating s are valued beyond which the device
may be damaged or have its useful life impaired. Functional operation
under these conditi ons is not implied.
Note 2: These values apply for the t
≤ 100 µs, duty cycle ≤ 20%.
w
ESD (HBM) 4 kV
DC Electrical Characteristics
Over recommended operating free air temperature range, unless otherwise noted
SINGLE DIODE OPERATION (Note 3)
Symbol Parameter Min Typ Max Units Conditions
V
BR
I
R
V
F
C
T
Note 3: These tests apply to separate diode operation, diodes not under test are open-circuit.
Reverse Breakdown Voltage 7.0 V IR = 10 µA
Static Reverse Current 10 µAVR = 7V
Static Forward Voltage −0.65 −0.85 V IF = −16 mA
Total Capacitance 5 10 pF VI = 0V, f = 1 MHz
−0.8 −1.0 IF = −50 mA
48 V
= 2V, f = 1 MHz
I
MULTIPLE DIODE OPERATION
Symbol Parameter Min Typ Max Units Conditions
I
CR
Note 4: ICR is measured under the fo llowing conditions: One diode static, all ot hers switching
The static diode input current is the internal crosstalk current I
Internal Crosstalk Current 0.2 2 mA Total GND current = 1.2A (Note 4)
Switching diodes : t
Duty cycle = 20%, I
= 100 µs; Static diode: VIN = 6V
W
= 200 mA
f
.
CR
AC Electrical Characteristics
TA = 25°C
Symbol Parameter Min Typ Max Units Conditions
V
FR
T
RR
www.fairchildsemi.com 2
Forward Recovery Voltage 1.25 V IF = 300 mA Figure 1
Reverse Recovery Time 5.0 ns IF = 10 mA, IR = 1 mA Figure 2
RL = 100Ω
Figure
Number
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