2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
November 1995
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
High density cell design for low R
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
DS(ON)
.
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
___________________________________________________________________________________________
D
G
S
TO-92
2N7000
Absolute Maximum Ratings T
Symbol Parameter
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J,TSTG
T
L
THERMAL CHARACTERISTICS
R
JA
θ
Drain-Source Voltage 60 V
Drain-Gate Voltage (RGS < 1 MΩ)
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
Maximum Drain Current - Continuous 200 115 280 mA
- Pulsed 500 800 1500
Maximum Power Dissipation 400 200 300 mW
o
Derated above 25
Operating and Storage Temperature Range -55 to 150 -65 to 150 °C
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
Thermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W
C 3.2 1.6 2.4 mW/°C
(TO-236AB)
2N7002/NDS7002A
= 25°C unless otherwise noted
A
G
2N7000 2N7002 NDS7002A
60 V
±20
±40
300 °C
D
S
Units
V
© 1997 Fairchild Semiconductor Corporation
2N7000.SAM Rev. A1
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA
DSS
Zero Gate Voltage Drain Current VDS = 48 V, V
GS
= 0 V
All
2N7000
60 V
1 µA
TJ=125°C 1 mA
2N7002
NDS7002A
2N7000
2N7002
NDS7002A
2N7000
2N7002
NDS7002A
1 µA
10 nA
100 nA
-10 nA
-100 nA
I
GSSF
I
GSSR
VDS = 60 V, V
GS
= 0 V
Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V
VGS = 20 V, VDS = 0 V
Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
TJ=125°C 0.5 mA
ON CHARACTERISTICS (Note 1)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage V
= V
, I
GS
, I
GS
= 1 mA
D
= 250 µA
D
DS
V
= V
DS
Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA
2N7000
2N7002
NDS7002A
2N7000
0.8 2.1 3 V
1 2.1 2.5
1.2 5
Ω
TJ =125°C 1.9 9
VGS = 4.5 V, ID = 75 mA 1.8 5.3
VGS = 10 V, ID = 500 mA
2N7002
1.2 7.5
TJ =100°C 1.7 13.5
VGS = 5.0 V, ID = 50 mA 1.7 7.5
TJ =100C 2.4 13.5
VGS = 10 V, ID = 500 mA NDS7002A 1.2 2
TJ =125°C 2 3.5
VGS = 5.0 V, ID = 50 mA 1.7 3
TJ =125°C 2.8 5
V
DS(ON)
Drain-Source On-Voltage VGS = 10 V, ID = 500 mA
2N7000
0.6 2.5 V
VGS = 4.5 V, ID = 75 mA 0.14 0.4
VGS = 10 V, ID = 500mA
2N7002
0.6 3.75
VGS = 5.0 V, ID = 50 mA 0.09 1.5
VGS = 10 V, ID = 500mA
NDS7002A
0.6 1
VGS = 5.0 V, ID = 50 mA 0.09 0.15
2N7000.SAM Rev. A1
Electrical Characteristics T
= 25oC unless otherwise noted
A
Symbol Parameter Conditions Type Min Typ Max Units
ON CHARACTERISTICS Continued (Note 1)
I
D(ON)
g
On-State Drain Current VGS = 4.5 V, VDS = 10 V
VGS = 10 V, VDS > 2 V
VGS = 10 V, VDS > 2 V
FS
Forward Transconductance VDS = 10 V, ID = 200 mA
VDS > 2 V
VDS > 2 V
DS(on)
DS(on)
DS(on)
DS(on)
, ID = 200 mA
, ID = 200 mA
2N7000
2N7002
NDS7002A
2N7000
2N7002
NDS7002A
75 600 mA
500 2700
500 2700
100 320 mS
80 320
80 320
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
on
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Turn-On Time
VDD = 15 V, RL = 25 Ω,
All
All
All
2N7000
20 50 pF
11 25 pF
4 5 pF
10 ns
ID = 500 mA, VGS = 10 V,
R
= 25
GEN
VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGS = 10 V,
R
= 25 Ω
GEN
t
off
Turn-Off Time
VDD = 15 V, RL = 25 Ω,
2N700
NDS7002A
2N7000
20
10 ns
ID = 500 mA, VGS = 10 V,
R
= 25
GEN
VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGS = 10 V,
R
= 25 Ω
GEN
2N700
NDS7002A
20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 115 mA (Note 1)
VGS = 0 V, IS = 400 mA (Note 1) NDS7002A 0.88 1.2
2N7002
NDS7002A
2N7002
NDS7002A
2N7002
115 mA
280
0.8 A
1.5
0.88 1.5 V
2N7000.SAM Rev. A1
D
Typical Electrical Characteristics
2N7000 / 2N7002 / NDS7002A
2
1.5
V = 10V
GS
9.0
8.0
7.0
6.0
1
0.5
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
5.0
4.0
3.0
3
V =4.0V
GS
2.5
2
1.5
DS(on)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.5
0 0.4 0.8 1.2 1.6 2
4.5
5.0
I , DRAIN CURRENT (A)
D
6.0
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2
V = 10V
1.75
1.5
1.25
DS(ON)
R , NORMALIZED
0.75
DRAIN-SOURCE ON-RESISTANCE
0.5
GS
I = 500mA
D
1
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
3
V = 10V
2.5
1.5
GS
T = 125°C
2
J
25°C
1
DS(on)
R , NORMALIZED
0.5
DRAIN-SOURCE ON-RESISTANCE
0
0 0.4 0.8 1.2 1.6 2
I , DRAIN CURRENT (A)
D
-55°C
7.0
8.0
9.0
10
Figure 3. On-Resistance Variation
with Temperature
2
V = 10V
DS
1.6
1.2
0.8
D
I , DRAIN CURRENT (A)
0.4
0
0 2 4 6 8 10
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
25°C
125°C
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.1
1.05
1
0.95
th
0.9
V , NORMALIZED
0.85
GATE-SOURCE THRESHOLD VOLTAGE
0.8
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
V = V
DS GS
I = 1 mA
D
2N7000.SAM Rev. A1
Pulse Width
Typical Electrical Characteristics (continued)
2N7000 / 2N7002 /NDS7002A
1.1
I = 250µA
D
1.075
1.05
1.025
1
DSS
BV , NORMALIZED
0.975
0.95
DRAIN-SOURCE BREAKDOWN VOLTAGE
0.925
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation
with Temperature
60
40
20
10
5
CAPACITANCE (pF)
2
1
1 2 3 5 10 20 30 50
f = 1 MHz
V = 0V
GS
V , DRAIN TO SOURCE VOLTAGE (V)
DS
C
2
V = 0V
GS
1
0.5
T = 125°C
0.1
0.05
0.01
0.005
S
I , REVERSE DRAIN CURRENT (A)
0.001
J
0.2 0.4 0.6 0.8 1 1.2 1.4
V , BODY DIODE FORWARD VOLTAGE (V)
SD
25°C
-55°C
Figure 8. Body Diode Forward Voltage Variation with
10
V = 25V
iss
C
oss
C
rss
8
6
4
2
GS
V , GATE-SOURCE VOLTAGE (V)
0
DS
I =500mA
D
280mA
115mA
0 0.4 0.8 1.2 1.6 2
Q , GATE CHARGE (nC)
g
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
in
10%
out
t
on
10%
50%
r
t
90%
t
d(off)
V
DD
t
d(on)
V
IN
V
GS
R
GEN
G
R
L
D
V
OUT
DUT
Input, V
S
Figure 11. Figure 12. Switching Waveforms
50%
t
off
90%
10%
90%
2N7000.SAM Rev. A1
t
f
Inverted
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
Typical Electrical Characteristics (continued)
3
2
1
0.5
RDS(ON) Limit
0.1
0.05
D
I , DRAIN CURRENT (A)
0.01
0.005
V = 10V
GS
SINGLE PULSE
T = 25°C
A
1 2 5 10 20 30 60 80
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 13. 2N7000 Maximum
Safe Operating Area
3
2
1
RDS(ON) Limit
0.5
0.1
0.05
D
I , DRAIN CURRENT (A)
0.01
0.005
V = 10V
GS
SINGLE PULSE
T = 25°C
A
1 2 5 10 20 30 60 80
V , DRAIN-SOURCE VOLTAGE (V)
DS
DC
10s
1s
Figure 15. NDS7000A Maximum
Safe Operating Area
10s
DC
100ms
10ms
100ms
1s
10ms
100us
1ms
100us
1ms
3
2
1
0.5
RDS(ON) Limit
0.1
0.05
V = 10V
D
I , DRAIN CURRENT (A)
0.01
0.005
GS
SINGLE PULSE
T = 25°C
A
1 2 5 10 20 30 60 80
V , DRAIN-SOURCE VOLTAGE (V)
DS
DC
10s
10ms
100ms
1s
Figure 14. 2N7002 Maximum
Safe Operating Area
100us
1ms
1
D = 0.5
0.5
R (t) = r(t) * R
θ
0.2
0.1
0.05
r(t), NORMALIZED EFFECTIVE
0.02
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.0001 0.001 0.01 0.1 1 10 100 300
Figure 16. TO-92, 2N7000 Transient Thermal Response Curve
1
JA
R = (See Datasheet)
θ
JA
P(pk)
t
1
t
2
T - T = P * R (t)
J
Duty Cycle, D = t /t
1
D = 0.5
0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.01
r(t), NORMALIZED EFFECTIVE
0.01
Single Pulse
0.002
0.001
0.0001 0.001 0.01 0.1 1 10 100 300
Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve
1
R (t) = r(t) * R
θ
JA
R = (See Datasheet)
θ
JA
P(pk)
t
1
t
2
T - T = P * R (t)
J
Duty Cycle, D = t /t
θ
JA
θ
JAA
1 2
θ
JA
θ
JAA
1 2
2N7000.SAM Rev. A1
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration: Figure 1.0
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
SPEC REV:
D9842
QA REV:
HTB:B
QTY:
10000
SPEC:
B2
(FSCINT)
F63TNR Label sample
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:
QTY: 2000
SPEC:
N/F: F (F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing Style Quan tity EOL code
Reel A 2,000 D26Z
E2,000 D27Z
Ammo M 2,000 D74Z
P2,000 D75Z
Unit w eight = 0.22 gm
Reel weight with compo nents = 1.04 kg
Amm o weig ht with components = 1.02 kg
Max q uantity p er intermed iate box = 10,000 units
(TO-92) BULK PACKING INFORMATION
EOL
CODE
J18Z
J05Z
NO EOL
CODE
L34Z
DESCRIPTION
TO-18 OPTION STD NO LEAD CLIP
TO-5 OPTION STD NO LEAD CLIP
TO-92 STANDARD
STRAIGHT FOR: PKG 92,
94 (NON PROELECTRON
SERIES), 96
TO-92 STANDARD
STRAIGHT FOR: PKG 94
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
NO LEADCLIP
NO LEADCLIP
LEADCLIP
DIMENSION
327mm x 158mm x 135mm
Immediate Box
Customized
Label
QUANTITY
2.0 K / BOX
1.5 K / BOX
2.0 K / BOX
2.0 K / BOX
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
5 Reels per
Intermediate Box
F63TNR
Label
Customized
Label
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
5 Ammo boxes per
Intermediate Box
F63TNR
Label
BULK OPTION
See Bulk Packing
Information table
FSCINT Label
2000 units per
EO70 box for
std option
375mm x 267mm x 375mm
Intermediate Box
333mm x 231mm x 183mm
Intermediate Box
Anti-static
Bubble Sheets
114mm x 102mm x 51mm
FSCINT
Label
Customized
Label
FSCINT
Label
Customized
Label
Immediate Box
530mm x 130mm x 83mm
FSCINT Label
©2001 Fairchild Semiconductor Corporation
Intermediate box
ustomized
C
Label
10,000 units maximum
per intermediate box
for std option
5 EO70 boxes per
intermediate Box
March 2001, Rev. B1
TO-92 Tape and Reel Data, continued
TO-92 Reeling Style
Configuration: Figure 2.0
Machine Option “A” (H)
Style “A”, D26Z, D70Z (s/h )
TO-92 Radial Ammo Packaging
Configuration: Figure 3.0
FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
Machine Option “E” (J)
Style “E”, D27 Z, D71 Z (s/ h)
FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP
September 1999, Rev. B
TO-92 Tape and Reel Data, continued
TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0
P Pd
Ha
H1
HO
P1 F1
User Direc tion of Feed
TO-92 Reel
Configuration: Figure 5.0
Hd
b
d
L1
P2
PO
DO
S
L
ITEM DESCRIPTION
Base of Package to Lead Bend
Compon en t He ig ht
Lead Clinch Height
Compon en t Ba s e Heig ht
Compon en t Al ig nm e nt ( sid e/s id e )
Compon en t Al ig nm e nt ( fron t /b ac k )
Compon en t Pi tc h
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring Out
W1
WO
t
W2
W
t1
SYMBOL
b
Ha
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S
DIMENSION
0.098 (m ax )
0.928 (+ /- 0.025)
0.630 (+ /- 0.020)
0.748 (+ /- 0.020)
0.040 (m ax )
0.031 (m ax )
0.500 (+ /- 0.020)
0.500 (+ /- 0.008)
0.150 (+ 0 .00 9, -0.010 )
0.247 (+ /- 0.007)
0.104 (+ /- 0 .010)
0.018 (+ 0 .00 2, -0.003 )
0.429 (m ax )
0.209 (+ 0 .05 1, -0.052 )
0.032 (+ /- 0.006)
0.021 (+ /- 0.006)
0.708 (+ 0 .02 0, -0.019 )
0.236 (+ /- 0.012)
0.035 (m ax )
0.360 (+ /- 0.025)
0.157 (+ 0 .00 8, -0.007 )
0.004 (m ax )
F63TNR Label
Customized Label
W2
ELECTROSTATIC
SENSITIVE DEVICES
D3
Note : All dimensions are in inches .
D4
D1
ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM
D2
W1
W3
Reel Diame t er D1 13 . 9 75 14.025
Arbor Hol e Di am et er ( Standard) D2 1.160 1.200
Core Diameter D3 3.100 3.300
Hub Recess Inner Diameter D4 2.700 3.100
Hub Recess Depth W1 0.370 0.570
Flange to Flange Inner Width W2 1.630 1.690
Hub to Hub Center Width W3 2.090
Note: All dimensions are inches
(Small Hole) D2 0.650 0.700
July 1999, Rev. A
TO-92 Package Dimensions
TO-92 (FS PKG Code 92, 94, 96)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1977
©2000 Fairchild Semiconductor International
January 2000, Rev. B
SOT-23 Packagin g
Configu ration: Figure 1.0
Components
Leader Tape
500mm minimum or
125 empty pockets
Trailer Tape
300mm minimum or
75 empty pocket s
SOT-23 Tape Leader and Trailer
Configuration: Figur e 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
SOT-23 Packaging Information
Stan dard
(no flow code)
D87Z
Packaging type
Reel Size
TNR
7" Dia
TNR
13"
Qty per Reel/Tube/Bag
3,000 10,000
Box Dimension (mm )
187x107x183 343x343x64
Max qty per B o x
24,000 30,000
Weight per unit (gm)
0.0082 0.0082
Weight per Reel (kg)
0.1175 0.4006
Human readable
Label
Human Readable Label
Human Readable Label sample
343mm x 342mm x 64mm
Intermediate box for L87Z Option
187mm x 107mm x 183mm
Intermediate Box for Standard Option
SOT-23 Unit Orientation
3P 3P 3P 3P
Human Readable
Label
Customized Label
Embossed
Carrier Tape
Antistatic Cover Tape
Packaging Description:
SOT-23
made from a dissipative (carbon filled) polyc arbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primaril y composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 uni ts per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
These full reels are individually labeled and placed inside
a standard intermediat e made of recyclable corrugated
brown paper with a Fairchil d logo printi ng. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed inside a labeled shippi ng box which
comes i n diff erent si zes depending on the number of part s
shipped.
parts are shipped in tape. The carrier tape is
SOT-23 Tape and Reel Data
©2000 Fairchild Semiconductor International
September 1999, Rev. C
SOT-23 Tape and Reel Data, continued
SOT-23 Embossed Carrier Tape
Confi guration: Figure 3.0
T
B0
Wc
D1
D0P0 P2
E1
W
F
E2
Tc
K0
P1
A0
User Direction of Feed
Dimensions are in millimeter
Pkg type
SOT-23
(8mm)
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
SOT-23 Reel Configuration: Figure 4.0
A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
3.15
2.77
8.0
1.55
1.125
1.75
6.25
+/-0.10
+/-0.10
+/-0.3
+/-0.05
+/-0.125
+/-0.10
3.50
min
+/-0.05
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum
B0
20 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
W1 Measured at Hub
A0
Sketch B (Top View)
Component Rotation
4.0
+/-0.1
Typical
component
cavity
center line
Typical
component
center line
Dim A
Max
4.0
+/-0.1
1.30
0.228
+/-0.013
5.2
+/-0.3
0.5mm
maximum
+/-0.10
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
0.06
+/-0.02
Dim A
max
Tape Size
8mm 7" Dia
8mm 13" Dia
Reel
Option
Dim N
Diameter Option
7"
See detail AA
B Min
Dim C
13" Diameter Option
See detail AA
W2 max Measured at Hub
W3
Dim D
min
DETAIL AA
Dimensions are in inches and millimeters
Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
7.00
0.059
177.8
13.00
330
1.5
0.059
1.5
512 +0.020/- 0.008
13 +0.5/-0.2
512 +0.020/- 0.008
13 +0.5/-0.2
0.795
2.165550.331 +0.059/-0.000
20.2
0.795
4.00
20.2
100
8.4 +1.5/0
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.567
14.4
0.311 – 0.429
7.9 – 10.9
0.311 – 0.429
7.9 – 10.9
September 1999, Rev. C
SOT-23 Package Dimensions
SOT-23 (FS PKG Code 49)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0082
©2000 Fairchild Semiconductor International
September 1998, Rev . A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
P ACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
Loading...