Fairchild 2N4123 User Manual
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2N4123
2N4123
C
B
E
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 30 V
Collector-Base Voltage 40 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
2N4123
P
D
R
θ
JC
R
θ
JA
2001 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
2N4123, Rev A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
CE
(sat)
V
(sat)
BE
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
f
T
NF Noise Figure VCE = 5.0 V, IC = 100 µA,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 30 V
Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
5.0 V
Collector Cutoff Current VCB = 20 V, IE = 0 50 nA
Emit ter Cutoff C u rre nt VEB = 3.0 V, IC = 0 50 nA
DC Cu r re n t Ga in VCE = 1.0 V, IC = 2.0 mA
V
= 1.0 V, IC = 50 mA
CE
50
25
150
Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.3 V
Base-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.95 V
Output Capacitance VCB = 5.0 V, f = 100 kHz 4.0 pF
Input Capacitance VEB = 0.5 V, f = 0.1 MHz 8.0 pF
Small-Signal Current Gain IC = 2.0 mA, VCE = 10 V,
f = 1. 0 kHz
= 10 mA, VCE = 20 V,
I
C
f = 100 MHz
Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V
50
200
2.5
250 MHz
f = 100 MHz
6.0 dB
= 1.0 kΩ,
R
S
= 10 Hz to 15.7 kHz
B
W
2N4123
T ypical Characteristics
2N4123
NPN General Purpose Amplifier
(continued)
Typical Puls ed Curr ent Gain
vs Collector Current
500
V = 5V
400
300
200
100
0
0.1 1 10 1 00
FE
h - TYPI CAL PULSED CURR ENT GAIN
125 °C
25 °C
- 40 °C
I - COLLECTOR CURRENT (mA)
C
CE
Base-Emitter Saturation
Voltage vs Collector Current
= 10
β
1
- 40 °C
0.8
25 °C
0.6
125 °C
0.4
BESAT
V - BASE-EMITTER VOLTAGE (V)
0.1 1 10 100
I - COLLECTOR CURRENT (mA)
C
Collector-Emitter Saturation
Voltage vs Collector Curren t
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
0.15
0.1
0.05
= 10
β
125 °C
25 °C
- 40 °C
0.1 1 10 100
I - COLLECTOR CURRENT (mA)
C
Base-Emitter ON Voltage v s
Collector Current
1
V = 5V
CE
0.8
0.6
0.4
0.2
0.1 1 10 100
BE(ON)
V - BASE-EMITTER ON VOLTAGE (V)
- 40 °C
I - COLLECTOR CURRENT (mA)
C
25 °C
125 °C
Collector-Cutoff Current
vs Ambient Temperature
500
V = 30V
100
CB
10
1
0.1
CBO
I - COLLECTOR CURRENT (nA)
25 50 75 100 125 150
T - AMBIENT TEMPERATURE ( C)
A
°
Capacitance vs
Reverse Bias Voltage
10
5
4
3
2
CAPACITANCE (pF)
1
0.1 1 10 100
REVERSE BIAS VOLTAGE (V)
f = 1.0 MHz
C
ibo
C
obo
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