1N4148WT / 1N4448WT / 1N914BWT
High Conductance Fast Switching Diode
1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
March 2008
• Fast Switching Diode (Trr <4.0nsec)
• Flat Lead, Surface Mount Device under 0.70mm Height
• Extremely Small Outline Plastic Package SOD523F
• Moisture Level Sensitivity 1
• Pb-free Version and RoHS Compliant
• Matte Tin (Sn) Lead Finish
Device Marking Code
Device T ype Device Mark ing
1N4148WT E1
1N4448WT E2
1N914BWT E3
• Green Mold Compound
SOD-523F
Absolute Maximum Ratings* T
=25°C unless otherwise noted
a
Band Indicates Cathode*
Symbol Parameter Value Units
V
RSM
V
RRM
I
FRM
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Non-Repetitive Peak Reverse Voltage 75 V
Repetitive Peak Reverse Voltage 75 V
Repetitive Peak Forward Current 300 mA
Operating Junction Temperature Range -55 to +150 °C
Storage Temperature Range -55 to +150 °C
Thermal Characteristics
Symbol Parameter Value Unit
R
θJA
P
D
*Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics* T
Symbol Parameter Test Conditions Min Typ Max Units
BV
R
I
R
V
F
C
O
T
RR
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. 1.0 1
Breakdown Voltage
Reverse Current
Forward Voltage
Diode Capacitance VR = 0, f = 1 MHz 4 pF
Reverse Recovery Time
Thermal Resistance, Junction to Ambient 500 °C/W
Power Dissipation(TC=25°C) 200 mW
=25°C unless otherwise noted
a
1N4448WT/ 914WT
1N4448WT
1N4448WT/ 914WT
IR = 100 μA
IR = 5 μA
VR = 20 V
VR = 75 V
IF = 5 mA
IF = 10 mA
IF = 100 mA
I F = 10 mA, VR = 6.0 V
I
= 1 mA, RL = 100 Ω
RR
100
75
25
5
0.62 0.72
1
1
4 nS
nA
μA
V
V
Typical Performance Characteristics
[mA]
0.58
0.56
0.54
0.52
0.50
Capacitance [pF]
0.48
0.46
1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
Total Capacitance
TA=25°C
0.44
02468101214
Reverse Voltage (V)
Forward Voltage vs Ambient Temperature
Typical
1.2
1.0
0.8
0.6
0.4
Ta=-40°C
Ta=25°C
Ta=150°C
VF- Forward Voltage [V]
0.2
0.0
0.01 0.1 1 10 100
Forward Current, I
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. 1.0 2
F
Typical Performance Characteristics
]
250
200
150
100
50
PD - Power Dissipation [mW]
0
0 25 50 75 100 125 150 175
1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
Power Derating Curve
Temperature [°C
5
Reverse Current vs Reverse Voltage
10
4
10
Ta=150°C
3
10
2
10
Ta=25°C
1
10
Reverse Current [nA]
0
10
Ta=-40°C
-1
10
10 20 30 40 50 60 70 80 90 100
Reverse Voltage, VR[V]
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. 1.0 3
Typical Performance Characteristics
1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
170
Ta=25°C
160
150
Reverse Voltage vs Reverse Current
VR - Reverse Voltage
140
110100
Reverse Current, IR[µA]
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. 1.0 4
Package Dimension
1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode
SOD-523F
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. 1.0 5
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1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode1N4148WT / 1N4448WT / 1N914BWT
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
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UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
2. A critical component is any component of a life support
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expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to result
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N4148WT / 1N4448WT / 1N914BWT Rev. 1.0 6
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