Excelics EPA480C Datasheet
Excelics
EPA480C
DATA SHEET
High Efficiency Heterojunction Power FET
+36.0dBm TYPICAL OUTPUT POWER
•
19.0dB TYPICAL POWER GAIN AT 2GHz
•
0.5 X 4800 MICRON RECESSED
•
“MUSHROOM” GATE
PASSIVATION
Si
•
3N4
ADVANCED EPITAXIAL HETEROJUNCTION
•
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 120mA PER BIN RANGE
•
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
1dB
G
1dB
PAE
Output Power at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
Gain at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss f=2GHz
75
SS
100
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
680
104
160
D
G
120
94
34.0 36.0
17.5 19.0
D
G
36.0
14.0
55
72
620
155
S
dBm
dB
%
Idss
Gm
Vp
BVgd
BVgs
Rth
Saturated Drain Current Vds=3V, Vgs=0V 880 1440 1880 mA
Transconductance Vds=3V, Vgs=0V 960 1560 mS
Pinch-off Voltage Vds=3V, Ids=14mA -1.0 -2.5 V
Drain Breakdown Voltage Igd=4.8mA -11 -15 V
Source Breakdown Voltage Igs=4.8mA -7 -14 V
Thermal Resistance (Au-Sn Eutectic Attach) 12
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
240mA
33dBm
175oC
-65/175oC
11.4 W
8V
-3V
1.2A
40mA
@ 3dB Compression
150oC
-65/150oC
9.5 W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
o
C/W
EPA480C
DATA SHEET
High Efficiency Heterojunction Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.500 0.932 -128.5 13.854 111.4 0.020 30.2 0.327 -151.2
1.000 0.921 -154.5 7.443 95.4 0.022 23.1 0.358 -162.2
1.500 0.919 -164.7 5.021 87.1 0.023 23.8 0.372 -165.2
2.000 0.918 -170.4 3.769 81.0 0.023 26.8 0.387 -166.4
2.500 0.919 -174.4 3.006 75.8 0.024 30.7 0.403 -167.0
3.000 0.920 -177.4 2.491 71.1 0.025 35.1 0.421 -167.6
3.500 0.921 -179.9 2.120 66.7 0.026 39.6 0.441 -168.4
4.000 0.922 177.9 1.839 62.5 0.027 43.9 0.461 -169.3
4.500 0.923 176.0 1.619 58.5 0.029 47.9 0.483 -170.5
5.000 0.925 174.2 1.441 54.7 0.032 51.4 0.505 -171.9
5.500 0.927 172.5 1.295 51.0 0.034 54.4 0.527 -173.5
6.000 0.928 170.8 1.172 47.5 0.037 56.8 0.549 -175.3
6.500 0.930 169.3 1.067 44.1 0.040 58.7 0.571 -177.2
7.000 0.932 167.8 0.977 40.8 0.044 60.1 0.592 -179.3
7.500 0.933 166.3 0.898 37.7 0.047 61.0 0.613 178.5
8.000 0.935 164.8 0.829 34.7 0.051 61.6 0.633 176.3
8.500 0.936 163.4 0.768 31.9 0.055 61.8 0.652 174.0
9.000 0.938 162.0 0.713 29.1 0.059 61.7 0.671 171.6
9.500 0.940 160.6 0.665 26.6 0.063 61.4 0.689 169.3
10.000 0.941 159.2 0.621 24.1 0.067 60.9 0.706 166.9
Note: The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 20 mils each; 2 drain wires, 12 mils each; 6 source wires, 7 mils each.
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