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Excelics
EPA240D
DATA SHEET
High Efficiency Heterojunction Power FET
+33dBm TYPICAL OUTPUT POWER
•
20.0 dB TYPICAL POWER GAIN AT 2GHz
•
0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE
•
PASSIVATION
Si
•
3N4
ADVANCED EPITAXIAL HETEROJUNCTION
•
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
Idss SORTED IN 60mA PER BIN RANGE
•
75
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
1dB
G
1dB
PAE
Output Power at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
Gain at 1dB Compression f= 2GHz
Vds=8V, Ids=50% Idss f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=8V, Ids=50% Idss f=2GHz
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
31.0 33.0
18.5 20.0
410
104
D
G
SS
100
94
33.0
15.0
55
72
620
155
dBm
dB
%
Idss
Gm
Vp
BVgd
BVgs
Rth
Saturated Drain Current Vds=3V, Vgs=0V 440 720 940 mA
Transconductance Vds=3V, Vgs=0V 480 760 mS
Pinch-off Voltage Vds=3V, Ids=6mA -1.0 -2.5 V
Drain Breakdown Voltage Igd=2.4mA -11 -15 V
Source Breakdown Voltage Igs=2.4mA -7 -14 V
Thermal Resistance (Au-Sn Eutectic Attach) 23
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
120mA
30dBm
175oC
-65/175oC
6.0 W
8V
-3V
620mA
20mA
@ 3dB Compression
150oC
-65/150oC
5.0W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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C/W
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EPA240D
DATA SHEET
High Efficiency Heterojunction Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.500 0.932 -84.1 15.622 132.6 0.023 49.4 0.267 -50.6
1.000 0.885 -124.4 10.061 109.7 0.029 33.4 0.194 -76.5
1.500 0.868 -144.6 7.154 97.1 0.031 27.8 0.165 -92.0
2.000 0.861 -156.7 5.496 88.3 0.032 26.3 0.156 -103.5
2.500 0.859 -165.1 4.443 81.3 0.033 26.8 0.158 -113.0
3.000 0.858 -171.6 3.720 75.2 0.034 28.5 0.166 -121.5
3.500 0.859 -176.9 3.194 69.7 0.034 30.9 0.179 -129.2
4.000 0.860 178.6 2.794 64.5 0.035 33.8 0.194 -136.4
4.500 0.862 174.6 2.478 59.5 0.037 36.8 0.212 -143.3
5.000 0.864 171.0 2.223 54.7 0.039 39.7 0.232 -149.8
5.500 0.867 167.6 2.012 50.0 0.041 42.4 0.255 -156.0
6.000 0.870 164.4 1.833 45.4 0.044 44.7 0.279 -162.0
6.500 0.873 161.4 1.680 40.9 0.048 46.5 0.304 -167.8
7.000 0.877 158.5 1.546 36.5 0.051 47.8 0.331 -173.5
7.500 0.880 155.8 1.428 32.2 0.055 48.5 0.359 -178.9
8.000 0.884 153.1 1.323 27.9 0.060 48.7 0.388 175.8
8.500 0.888 150.5 1.229 23.8 0.065 48.5 0.417 170.6
9.000 0.892 147.9 1.143 19.7 0.069 47.8 0.447 165.6
9.500 0.896 145.4 1.064 15.7 0.074 46.8 0.477 160.7
10.000 0.900 143.0 0.993 11.8 0.079 45.5 0.506 155.9
Note: The data included 0.7 mils diameter Au bonding wires:
1 gate wires, 20 mils each; 1 drain wires, 12 mils each; 4 source wires, 7 mils each.