Excelics EPA240BV, EPA240B Datasheet
960
50
350
50
120
48
100
95
40
156
D
DDD
G
GG
G
Excelics
EPA240B/EPA240BV
DATA SHEET
High Efficiency Heterojunction Power FET
•
+32.5dBm TYPICAL OUTPUT POWER
•
8.0dB TYPICAL POWER GAIN FOR EPA240B AND
9.5dB FOR EPA240BV AT 18GHz
•
0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE
•
Si3N4 PASSIVATION
•
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
•
EPA240BV WITH VIA HOLE SOURCE GROUNDING
•
Idss SORTED IN 60mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS
EPA240B
EPA240BV
UNIT
MIN TYP MAX MIN TYP MAX
P
1dB
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
31.0 32.5
32.5
31.0 32.5
32.5
dBm
G
1dB
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
9.0
10.5
8.0
10.5
12.0
9.5
dB
PAE
Gain at 1dB Compre s sio n
Vds=8V, Ids=50% Idss f=12GHz
44
45
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V 440 720 940 440 720 940 mA
Gm
Transconductance Vds=3V, Vgs=0V 480 760 480 760 mS
Vp
Pinch-off Voltage Vds=3V, Ids=6mA -1.0 -2.5 -1.0 -2.5 V
BVgd
Drain Breakdown Voltage Igd=2.4 mA -11 -15 -11 -15 V
BVgs
Source Breakdown Voltage Igs=2.4mA -7 -14 -7 -14 V
Rth
Thermal Resistance (Au-Sn Eutectic Attach) 20 15
o
C/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
EPA240B
EPA240BV
ABSOLUTE1 CONTINUOUS2 ABSOLUTE1 CONTINUOUS2
Vds
Drain-Source Voltage 12V 8V 12V 8V
Vgs
Gate-Source Voltage -8V -3V -8V -3V
Ids
Drain Current Idss 710mA Idss Idss
Igsf
Forward Gate Current 120mA 20mA 120mA 20mA
Pin
Input Power 30dBm @ 3dB
Compression
30dBm @ 3dB
Compression
Tch
Channel Temperature 175
o
C 150oC 175oC 150oC
Tstg
Storage Temperature -65/175
o
C -65/150oC -65/175oC -65/150oC
Pt
Total Power Dissipation 6.8W 5.7W 9.1W 7.6W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75 ± 20 microns
All Dimensions In Microns
:
Via Hole
No Via Hole For EPA240B
EPA240B/EPA240BV
DATA SHEET
High Efficiency Heterojunction Power FET
S-PARAMETERS
EPA240B 8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.893 -140.0 11.254 105.9 0.024 23.9 0.487 -164.0
2.0 0.905 -158.8 6.029 91.1 0.026 20.1 0.511 -170.6
4.0 0.915 -170.0 3.095 76.0 0.026 24.7 0.533 -173.3
6.0 0.915 -174.7 2.080 64.4 0.027 32.0 0.555 -173.0
8.0 0.922 -177.7 1.559 54.4 0.028 35.9 0.583 -172.9
10.0 0.926 -179.9 1.235 45.7 0.028 44.5 0.606 -173.2
12.0 0.936 178.1 1.008 36.8 0.030 46.5 0.630 -175.8
14.0 0.942 176.3 0.832 27.6 0.030 44.1 0.653 178.4
16.0 0.940 175.3 0.690 18.2 0.031 41.9 0.688 170.7
18.0 0.955 175.0 0.583 9.5 0.033 39.1 0.734 162.8
20.0 0.950 174.1 0.487 1.1 0.035 37.8 0.776 155.7
22.0 0.931 173.7 0.415 -4.4 0.042 42.4 0.809 152.7
24.0 0.942 172.1 0.381 -8.1 0.057 39.6 0.847 151.7
26.0 0.915 169.2 0.351 -11.3 0.068 39.9 0.850 153.6
S-PARAMETERS
EPA240BV 8V, 1/2 Idss
Note: The data included 0.7 mils diameter Au bonding wires; 4 gate wires, 15 mils each; 4 drain wires, 20 mils each;
10 source wires, 7 mils each; no source wires for EPA240BV.
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.886 -130.3 12.345 110.8 0.025 26.9 0.439 -157.5
2.0 0.905 -156.0 6.735 93.3 0.027 16.9 0.487 -166.8
4.0 0.919 -170.7 3.380 75.6 0.026 14.4 0.521 -170.5
6.0 0.932 -174.6 2.197 64.0 0.024 18.4 0.555 -171.8
8.0 0.938 -176.0 1.591 54.4 0.022 21.2 0.603 -171.4
10.0 0.945 -175.5 1.235 46.8 0.019 27.5 0.646 -171.4
12.0 0.950 -175.2 0.999 39.2 0.019 35.1 0.690 -172.5
14.0 0.952 -176.4 0.840 31.2 0.019 33.8 0.723 -174.9
16.0 0.957 -180.0 0.732 21.5 0.019 27.3 0.757 -179.0
18.0 0.962 173.9 0.637 10.2 0.020 17.1 0.783 175.1
20.0 0.963 166.8 0.551 -1.7 0.022 11.4 0.808 167.8
22.0 0.965 162.0 0.445 -10.8 0.022 8.5 0.858 162.0
24.0 0.963 160.4 0.365 -18.8 0.024 8.3 0.882 157.0
26.0 0.963 161.9 0.307 -23.0 0.028 17.8 0.905 153.5
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