Excelics EPA120BV, EPA120B Datasheet
Excelics
EPA120B/EPA120BV
DATA SHEET
High Efficiency Heterojunction Power FET
+29.5dBm TYPICAL OUTPUT POWER
•
9.0dB TYPICAL POWER GAIN FOR EPA120B AND
•
10.5dB FOR EPA120BV AT 18GHz
0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
•
Si3N4 PASSIVATION
•
ADVANCED EPITAXIAL DOPING PROFILE
•
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
EPA120BV WITH VIA HOLE SOURCE GROUNDING
•
Idss SORTED IN 30mA PER BIN RANGE
•
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS
P
1dB
G
1dB
PAE
Idss
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Gain at 1dB Compre s s io n
Vds=8V, Ids=50% Idss f=12GHz
Saturated Drain Current Vds=3V, Vgs=0V 220 360 500 220 360 500 mA
EPA120B
MIN TYP MAX MIN TYP MAX
28.0 29.5
10.0
40
Chip Thickness: 75 ± 20 microns
All Dimensions In Microns
:
No Via Hole For EPA120B
29.5
11.5
9.0
45
550
156
50
DD
G
50 12095
Via Hole
28.0 29.5
11.5
G
EPA120BV
29.5
13.0
10.5
46
48
350
100
UNIT
dBm
dB
%
Gm
Vp
BVgd
BVgs
Rth
Transconductance Vds=3V, Vgs=0V 240 380 240 380 mS
Pinch-off Voltage Vds=3V, Ids=3.0mA -1.0 -2.5 -1.0 -2.5 V
Drain Breakdown Voltage Igd=1.2mA -11 -15 -11 -15 V
Source Breakdown Voltage Igs=1.2mA -7 -14 -7 -14 V
Thermal Resistance (Au-Sn Eutectic Attach) 40 30
MAXIMUM RATINGS AT 25OC
SYMBOLS
ABSOLUTE1 CONTINUOUS2 ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage 12V 8V 12V 8V
Gate-Source Voltage -8V -3V -8V -3V
Drain Current Idss 355mA Idss 470mA
Forward Gate Current 60mA 10mA 60mA 10mA
Input Power 27dBm @ 3dB
Channel Temperature 175
Storage Temperature -65/175
Total Power Dissipation 3.4W 2.8W 4.5W 3.8W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EPA120B
o
C 150oC 175oC 150oC
o
C -65/150oC -65/175oC -65/150oC
27dBm @ 3dB
Compression
EPA120BV
Compression
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
o
C/W
EPA120B/EPA120BV
DATA SHEET
EPA120B
P-1dB & PAE vs. Vds
f = 12 GHz
Ids = 50% Idss
40
38
36
34
32
30
28
P-1dB (dBm)
26
24
45678
Drain-Source Voltage (V)
S-PARAMETERS
EPA120B 8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.873 -97.8 14.614 124.8 0.030 40.1 0.245 -89.7
2.0 0.866 -133.3 8.974 103.2 0.035 27.0 0.239 -119.4
4.0 0.865 -159.6 4.841 81.9 0.038 19.8 0.258 -137.9
6.0 0.864 -170.9 3.287 67.7 0.037 21.8 0.296 -142.5
8.0 0.872 -177.9 2.476 55.8 0.037 23.5 0.344 -145.9
10.0 0.877 176.9 1.974 45.6 0.035 27.7 0.385 -149.2
12.0 0.890 171.7 1.633 35.0 0.036 30.8 0.429 -154.4
14.0 0.899 166.4 1.367 24.3 0.039 30.5 0.472 -161.9
16.0 0.901 161.5 1.148 13.5 0.041 29.9 0.519 -171.5
18.0 0.917 156.9 0.980 2.7 0.045 27.3 0.575 178.6
20.0 0.908 152.3 0.819 -7.9 0.051 26.1 0.635 169.2
22.0 0.896 149.4 0.698 -16.0 0.058 26.3 0.686 162.5
24.0 0.903 145.8 0.616 -23.4 0.069 26.7 0.734 157.7
26.0 0.886 143.8 0.552 -28.0 0.084 27.1 0.750 155.7
S-PARAMETERS
EPA120BV 8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.887 -88.4 15.059130.0 0.029 41.8 0.272 -73.8
2.0 0.879 -127.4 9.715 107.1 0.036 25.4 0.256 -107.7
4.0 0.887 -157.2 5.309 84.0 0.038 11.4 0.274 -129.7
6.0 0.899 -168.8 3.554 69.5 0.036 6.6 0.316 -137.2
8.0 0.905 -175.1 2.651 58.1 0.035 3.3 0.372 -140.3
10.0 0.909 -179.4 2.091 48.2 0.032 1.0 0.430 -143.1
12.0 0.913 176.6 1.726 38.2 0.030 -0.8 0.484 -147.7
14.0 0.916 171.5 1.462 27.9 0.030 -2.9 0.528 -154.0
16.0 0.925 165.2 1.263 16.8 0.030 -6.7 0.570 -162.0
18.0 0.930 157.9 1.088 4.6 0.030 -10.1 0.611 -171.8
20.0 0.939 151.1 0.936 -7.4 0.031 -14.1 0.654 178.3
High Efficiency Heterojunction Power FET
55
50
45
40
35
PAE (%)
30
25
20
Pout & PAE vs. Pin
f = 12 GHz
Vds = 8V, Ids = 50% Idss
50
40
30
20
10
Pout (dBm) or PAE (%)
0
-10-50510152025
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
21.0 0.946 149.8 0.824 -11.5 0.029 -15.2 0.700 174.9
22.0 0.956 148.9 0.752 -16.0 0.030 -13.2 0.720 170.6
24.0 0.967 148.0 0.636 -24.1 0.029 -11.8 0.769 164.6
26.0 0.967 148.0 0.554 -30.0 0.029 -4.9 0.799 162.4
28.0 0.956 148.0 0.503 -34.2 0.033 0.1 0.828 161.4
30.0 0.951 146.2 0.473 -39.5 0.034 -3.5 0.850 161.0
32.0 0.937 141.5 0.443 -47.2 0.033 -11.3 0.854 158.1
34.0 0.931 134.2 0.403 -57.4 0.029 -15.4 0.858 151.4
36.0 0.949 125.4 0.363 -69.3 0.029 -29.0 0.881 140.4
38.0 0.969 117.5 0.316 -81.0 0.038 -56.8 0.910 127.9
40.0 0.981 113.5 0.284 -92.8 0.050 -85.1 0.930 119.2
Pout
Pin (dBm)
PAE
Note: The data included 0.7 mils diameter Au bonding wires; 2 gate wires, 15 mils each; 2 drain wires, 20 mils each;
6 source wires, 7 mils each; no source wires for EPA120BV.
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