Excelics EPA060B-70 Datasheet
Excelics
EPA060B-70
DATA SHEET
High Efficiency Heterojunction Power FET
Features
NON-HERM ETI C LOW COST CERAMI C 70 mil PACKAGE
•
• +26dBm TYPICAL OUTPUT POWER
• 9.0dB TYPICAL POWER GAIN AT 12 GHZ
• 0.4 dB TYPICAL NOI SE FIGURE AT 2G H z
• 20 dB TYPICAL ASSOCIATED GAIN AT 2 GHz
• 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
• Si
• ADVANCED EPITAXIAL HETEROJUNCTIO N PROFI LE
PROVIDES EXTRA HIGH POWER EFFICIENCY,
AND HIGH RELIABILITY
Applicati ons
•
• DC to 18 GHz
PASSIVATION
3N4
High Dynami c Ra n g e LNA
0LQ
6
$OO /HDGV
All Dimensions In mils.
'
6
*
ELECTRICAL CHARACTERIS T I CS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
1dB
G
1dB
PAE
IP3
NF
GA
Idss
Gm
Vp
BVgd
BVgs
Rth
* Overall Rth depends on case mounting.
Output Power at 1dB Compression f=2GHz
Vds=6V, Ids=50% Idss f=12GHz
Gain at 1dB Compression f=2GHz
Vds=6V, Ids=50% Idss f=12GHz
Power Added Efficiency at 1dB Compression f=2GHz
Vds=6V, Ids=50% Idss f=12GHz
+5dBm P
(5V/90mA)
Noise Figure (5V/50mA) f=2GHz
(5V/90mA)
Associated Gain (5V/50mA) f=2GHz
(5V/90mA)
Saturat ed Drain Current Vds=3V, Vgs=0V 110 180 250 mA
Transconductance Vds=3V, Vgs=0V 120 190 mS
Pinch-off Voltage Vds=3V, Ids=2.0mA -1.0 -2.5 V
Drain B r eakdown Vo ltage Igd=1.0m A -10 -15 V
Source Breakdown Vol tage Igs=1.0m A -6 -14 V
Thermal Resistance 175
/Tone (5V/50mA) f=2GHz
OUT
24.0
17.0
7.0
26.0
25.5
19.0
9.0
55
28
45
31
0.4
0.6
20.0
20.0
*
dBm
%
dBm
dB
dB
oC/W
dB
O
MAXIMUM RATING S AT 2 5
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Drain-Source Voltage 10V 6V
Gate-Source Voltage -6V -3V
Drain C ur rent Idss 110mA
Forward Gate Current 30mA 5mA
Input Power 23dBm @ 3dB Compression
Channel Temperature 175
Stor age Tem perature -65/175
Total P ower D issi pation 780mW 650mW
C
o
C 150 oC
o
C -65/150 oC
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EPA060B-70
]
]
DATA SHEET
High Efficiency Heterojunction Power FET
Typical Performance
Noise Figure &IP3
EPA060B-70 @5V, 2GHz
(P
/Tone = 5dBm)
OUT
0.8
0.6
40
30
NF
0.4
NF [dB
0.2
0
20
10
0
IP3
IP3 [dBm
020406080100120140
Ids [mA]
S-PARAMETERS
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.863 -58.2 12.375 135.5 0.026 63.8 0.523 -24.4
2.0 0.696 -101.1 9.063 104.4 0.039 49.7 0.433 -41.0
3.0 0.604 -132.0 6.850 82.3 0.049 43.5 0.388 -51.9
4.0 0.555 -159.5 5.508 63.6 0.055 39.1 0.360 -60.8
5.0 0.538 177.3 4.614 47.0 0.065 35.5 0.322 -70.3
6.0 0.534 160.5 4.002 31.8 0.074 30.5 0.288 -84.5
7.0 0.533 141.8 3.532 16.7 0.083 25.3 0.281 -98.4
8.0 0.540 125.9 3.168 2.3 0.092 19.2 0.254 -111.5
9.0 0.582 105.0 2.817 -12.9 0.101 11.6 0.235 -125.6
10.0 0.622 88.1 2.532 -28.1 0.108 2.7 0.220 -148.1
11.0 0.642 74.5 2.370 -43.9 0.119 -8.1 0.225 -176.6
12.0 0.674 60.3 2.195 -60.1 0.129 -19.3 0.238 155.7
13.0 0.727 47.7 1.970 -74.8 0.132 -30.2 0.244 130.0
14.0 0.764 36.4 1.758 -88.3 0.133 -40.6 0.263 110.6
15.0 0.776 22.6 1.618 -104.8 0.137 -54.2 0.316 90.1
16.0 0.790 8.5 1.441 -122.5 0.134 -69.5 0.358 66.2
17.0 0.781 -1.1 1.285 -135.3 0.133 -78.3 0.363 51.0
18.0 0.792 -9.8 1.221 -147.7 0.144 -91.0 0.396 41.9
19.0 0.811 -22.2 1.106 -163.8 0.142 -106.2 0.418 23.9
20.0 0.836 -32.5 1.016 -179.0 0.144 -121.0 0.445 6.7
21.0 0.800 -41.8 0.975 166.9 0.157 -134.6 0.461 -8.4
22.0 0.761 -54.5 0.941 152.3 0.176 -148.9 0.426 -22.5
23.0 0.800 -68.3 0.861 134.7 0.190 -167.5 0.399 -50.3
24.0 0.799 -80.2 0.764 117.1 0.204 173.5 0.417 -78.5
25.0 0.719 -98.1 0.751 103.1 0.239 157.7 0.451 -87.9
26.0 0.718 -119.4 0.750 85.7 0.291 137.6 0.450 -110.4
6V, 1/2 Idss
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