Excelics EPA018A-SOT23 Datasheet

SOURCE

GATEDRAIN

2-4

37-47

91-98

75.5

38

15-20

110-120

47-55

27

4-7

Excelics

EPA018A-SOT23

PRELIMINARY DATA SHEET

DC-6GHz High Efficiency Heterojunction Power FET

•

LOW COST SURFACE-MOUNT PLASTIC PACKAGE

•

+20.0dBm TYPICAL OUTPUT POWER

•

17.0dB TYPICAL POWER GAIN AT 2GHz

•

0.7dB TYPICAL NOISE FIGURE AT 2GHz

•

+27dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT
2GHz

•

0.3 X 180 MICRON RECESSED “MUSHROOM” GATE

•

Si

3N4

PASSIVATION

•

ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY

ELECTRICAL CHARACTERISTICS (Ta = 25 OC)

SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT

P

1dB

Output Power at 1dB Compression f=2GHz
Vds=6V, Ids=30mA

18.0 20.0

dBm

G

1dB

Gain at 1dB Compression f=2GHz
Vds=6V, Ids=30mA

15.0 17.0

dB

NF

Noise Figure, Vds=2V, Ids=15mA f=2GHz
Vds=6V, Ids=30mA

0.7

0.9

dB

IP3

Output 3rd Order Intercept Point f=2GHz
Vds=6V, Ids=30mA

27

dBm

Idss

Saturated Drain Current Vds=3V, Vgs=0V 30 55 80 mA

Gm

Transconductance Vds=3V, Vgs=0V 35 60 mS

Vp

Pinch-off Voltage Vds=3V, Ids=1.0mA -1.0 -2.5 V

BVgd

Drain Breakdown Voltage Igd=0.5mA -9 -15 V

BVgs

Source Breakdown Voltage Igs=0.5mA -7 -14 V

Rth

Thermal Resistance 450*

o

C/W

* Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25OC

SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2

Vds

Drain-Source Voltage

12V

6V

Vgs

Gate-Source Voltage

-8V

-3V

Ids

Drain Current

Idss

45mA

Igsf

Forward Gate Current

9mA

1.5mA

Pin

Input Power

16dBm

@3dB Compression

Tch

Channel Temperature

175oC

150oC

Tstg

Storage Temperature

-65/175oC

-65/150oC

Pt

Total Power Dissipation

330mW

280mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com

(Top View)

All Dimensions In Mils

Excelics

EPA018A-SOT23

PRELIMINARY DATA SHEET

DC-6GHz High Efficiency Heterojunction Power FET

S-PARAMETERS

6V, 30mA

FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --­(GHz) MAG ANG MAG ANG MAG ANG MAG ANG

0.1 1.016 -3.8 6.436 176.9 0.001 -173.4 0.828 -1.2

0.2 1.008 -7.6 6.387 174.0 0.006 79.5 0.822 -4.0

0.3 1.009 -11.4 6.371 170.9 0.009 81.1 0.822 -6.2

0.4 1.004 -15.4 6.355 167.7 0.012 79.8 0.821 -8.4

0.5 1.006 -19.2 6.351 164.6 0.016 80.6 0.821 -10.4

1.0 0.984 -39.1 6.167 148.0 0.031 67.2 0.805 -21.7

1.5 0.898 -44.3 4.608 136.1 0.033 62.1 0.812 -22.8

2.0 0.834 -60.3 4.347 120.9 0.041 53.6 0.777 -31.5

2.5 0.773 -74.7 3.971 107.2 0.045 45.6 0.746 -39.1

3.0 0.719 -86.1 3.620 95.6 0.047 40.2 0.727 -45.3

3.5 0.667 -95.1 3.357 85.6 0.048 39.1 0.713 -49.5

4.0 0.606 -103.0 3.204 76.5 0.050 39.6 0.703 -53.0

4.5 0.529 -111.7 3.113 66.9 0.055 42.2 0.686 -56.6

5.0 0.448 -123.5 3.048 56.8 0.062 44.9 0.660 -60.7

5.5 0.376 -140.5 2.932 46.2 0.072 44.8 0.627 -66.0

6.0 0.338 -160.8 2.767 35.5 0.085 43.0 0.592 -72.5

6.5 0.332 -179.3 2.542 25.4 0.099 37.5 0.549 -79.5

7.0 0.312 171.0 2.288 18.2 0.105 27.2 0.494 -83.0

7.5 0.254 168.2 2.134 15.0 0.082 26.1 0.505 -78.5

8.0 0.215 179.1 2.204 11.5 0.093 52.4 0.617 -80.4

8.5 0.208 172.4 2.298 3.6 0.145 53.8 0.691 -88.7

9.0 0.186 145.9 2.317 -5.4 0.184 46.1 0.698 -96.8

9.5 0.214 116.9 2.337 -14.0 0.224 41.7 0.716 -105.7

10.0 0.302 102.2 2.295 -23.1 0.268 34.6 0.689 -118.2

10.5 0.381 98.9 2.263 -29.0 0.309 28.8 0.668 -128.1

11.0 0.433 105.6 2.386 -33.9 0.368 24.9 0.725 -136.4

11.5 0.542 117.3 2.658 -41.4 0.485 19.4 0.905 -148.9

12.0 0.897 108.0 3.059 -56.2 0.673 -2.8 1.112 -172.8