Excelics EMA501D
TENTATIVE DATA SHEET
36 - 40 GHz Medium Power MMIC
FEATURES
•• 36 -40 GHz BANDWIDTH
•• +21 dBm OUTPUT POWER @1dB Gain Compression
•• 23 dB TYPICAL POWER GAIN
•• DUAL BIAS SUPPLY
•• 0.3 MICRON RECESSED “MUSHROOM” GATE
•• Si3N4 PASSIVATION
•• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS1 (Ta = 25 OC)
SYMBOL PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
F
Operating Frequency Range 36 40 GHz
P
1dB
Ouput Power at 1dB Gain Compression @ Vdd=8V 21 dBm
Gss
Small Signal Gain 23 dB
∆∆Gss
Small Signal Gain Flatness
± 3
dB
NF
Noise Figure @ Vdd=3.5V, Id=100mA 6 dB
VSWR in
Input VSWR 3.0:1
VSWR out
Output VSWR 3.0:1
Idd
Power Supply Current 100 mA
Vdd
Power Supply Voltage 6 8 V
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Drain-Source Voltage 12V 8V
Vgs
Gate-Source Voltage -8V -3V
Ids
Drain Current Idss 150mA
Igf
Forward Gate Current 36 mA 6mA
Pin
Input Power 15dBm @3dB Compression
Tch
Channel Temperature 175oC 150oC
Tstg
Storage Temperature -65/175oC -65/150oC
Pt
Total Power Dissipation 0.7 W 0.6 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Size 1060 x 2000 microns
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns