Excelics
EMA302B
PRELIMINARY DATA SHEET
22-26 GHz Medium Power MMIC
•
22-26 GHz BANDWIDTH
•
+28.0 dBm TYPICAL OUTPUT POWER
•
15 dB ± 1.5 dB TYPICAL POWER GAIN
•
TWO STAGE, INPUT PARTIALLY MATCHED,
OUTPUT MATCH OFF CHIP
•
0.3 MICRON RECESSED “MUSHROOM” GATE
•
Si
3N4
PASSIVATION
•
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS1 (Ta = 25 OC)
SYMBOL PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
F
Operating Frequency Range 22 26 GHz
P
1dB
Ouput Power at 1dB Gain Compression 28 dBm
Gss
Small Signal Gain 15 dB
PAE
Power added efficiency at 1dB gain Compression 24 %
VSWR in
Input VSWR 2.5:1
VSWR out
Output VSWR 3.0:1
Ids1/Ids2
Drain Supply Currents for 1
st
& 2nd Stages 120/240 mA
Vdd
Power Supply Voltage 6 8 V
Rth
Thermal Resistance (Au-Sn Eutectic Attach) 18
o
C/W
Note: 1. Specifications are based on device mounted in application circuit.
D.C. characteristics for 1
st
& 2nd FETs follow those of EPA080A and EPA160A, respectively.
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE2 CONTINUOUS3
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-3V
Ids1/Ids2
Drain Current
Idss
260 mA / 520 mA
Igsf1/Igsf2
Forward Gate Current
40 mA / 80 mA
7mA / 14 mA
Pin
Input Power
25dBm
@3dB Compression
Tch
Channel Temperature
175oC
150oC
Tstg
Storage Temperature
-65/175oC
-65/150oC
Pt
Total Power Dissipation
7.5 W
6.3 W
Note: 2. Exceeding any of the above ratings may result in permanent damage.
3. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
65 50
85
50
50
1020
185
285
165
260
425
900
95
255
305
325
165