Excelics EIB1314-4P, EIA1314-4P Datasheet

Excelics
EIA/EIB1314-4P
PRELIMINARY DATA SHEET
13.75-14.5GHz, 4W Internally Matched Power FET
IMPEDANCE MATCHE D T O 5 0 OHM
EIA FEATURES HIGH PAE( 27 % TYPICAL)
EIB FEATURES HIGH IP3(49dBm TY PICAL)
+36.5/ +3 6 dBm TYPICAL P
EIA/EIB
8.5/7.5dB TY PICAL G
1dB
NON-HERME T IC M E TAL FLANG E PACK AG E
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS
P
1dB
G
1dB
PAE
Id
1dB
IP3
Output Power at 1dB Comp ression f=13.75- 14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Gain at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Power Added Efficiency at 1dB compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Drain C ur rent at 1dB Compre ssion 1760 1700 mA Output 3rd Orde r Intercept Point f=13.75-14. 5GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
OUTPUT POWER FOR
1dB
POWER GAIN FOR EIA/ E IB
EIA1314-4P EIB1314-4P
MIN TYP MAX MIN TYP MAX
35.5 36.5 35 36
7.5 8.5 6.5 7.5
43 49* dBm
UNIT
dBm
dB
27 22 %
I
dss
Gm Vp BVgd Rth
Saturat ed Drai n Curre nt Vds=3V, Vgs=0V 2200 2880 3400 2200 2720 3400 mA
Transconductance Vds=3V, Vgs=0V 3000 1400 mS
Pinch-off Voltage Vds=3V, Ids=24mA -1.0 -2.5 -2.0 -3.5 V
Drain B r eakdown Voltage Igd=9.6mA -13 -15 -15 V
Thermal Resistance (Au-Sn Eutectic Attach ) 4.5 4.5
*Typical –45dBc IM3 at Pout=26dBm/Tone
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage 12V 8V Gate-Source Voltage -8V -3V Drain C ur rent Idss 3120mA Forward Gate Curre nt 360mA 60mA Input Power 35dBm @ 3dB Compression Channel Temperature 175oC 150oC Storage Temperature -65/175oC -65/150oC Total Power Dissipation 30W 25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. E xceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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C/W
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