Excelics
EIA/EIB1314-2P
PRELIMINARY DATA SHEET
13.75-14.5GHz, 2W Internally Matched Power FET
• 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHE D T O 5 0 OHM
• EIA FEATURES HIGH PAE( 30 % TYPICAL)
• EIB FEATURES HIGH IP3(46dBm TY PICAL)
• +33.5/ +3 3 . 0 dBm TYPICAL P
EIA/EIB
• 9.0/8.0dB TY PICAL G
1dB
• NON-HERME T IC M E TAL FLANG E PACK AG E
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS
P
1dB
G
1dB
PAE
Id
1dB
IP3
Output Power at 1dB Comp ression f=13.75- 14.5GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Gain at 1dB Compression f=13.75-14.5GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Power Added Efficiency at 1dB compression
f=13.75-14.5GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Drain C ur rent at 1dB Compre ssion 880 850 mA
Output 3rd Orde r Intercept Point f=13.75-14. 5GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
OUTPUT POWER FOR
1dB
POWER GAIN FOR EIA/ E IB
EIA1314-2P EIB1314-2P
MIN TYP MAX MIN TYP MAX
32.5 33.5 32 33.0
8 9 7 8
40 46* dBm
UNIT
dBm
dB
30 25 %
I
dss
Gm
Vp
BVgd
Rth
Saturat ed Drai n Curre nt Vds=3V, Vgs=0V 1100 1440 1700 1100 1360 1700 mA
Transconductance Vds=3V, Vgs=0V 1500 700 mS
Pinch-off Voltage Vds=3V, Ids=12mA -1.0 -2.5 -2.0 -3.5 V
Drain B r eakdown Voltage Igd=4.8mA -13 -15 -15 V
Thermal Resistance (Au-Sn Eutectic Attach ) 8 8
*Typical –45dBc IM3 at Pout=23dBm/Tone
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage 12V 8V
Gate-Source Voltage -8V -3V
Drain Current Idss Idss
Forward Gate Curre nt 180mA 30mA
Input Power 32dBm @ 3dB Compression
Channel Temperature 175oC 150oC
Storage Temperature -65/175oC -65/150oC
Total Power Dissipation 17W 14.2W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. E xceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
o
C/W
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