Datasheet EIB1414-2P, EIA1314A-4P Datasheet (Excelics)

Excelics EIA1314A-4P

PRELIMINARY DATA SHEET 13.0-14.5 GHz: 4Watt

Internally Matched Power FET

•• 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT

IMPEDANCE MATCHED TO 50 OHM

•• FEATURES HIGH PAE (27% TYPICAL)

•• +36.0dBm TYPICAL P

•• 8.5dB TYPICAL G

•• NON-HERMETIC METAL FLANGE PACKAGE

ELECTRICAL CHARACTERISTICS (Ta = 25 OC)

OUTPUT POWER

1dB

POWER GAIN

1dB

SYMBOLS PARAMETERS/TEST CONDITIONS

P

1dB

G

1dB

PAE

Id

1dB

IP3
Idss

Gm
Vp
BVgd
Rth

Output Power at 1dB Compression f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss

Gain at 1dB Compression f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss

Power Added Efficiency at 1dB compression
f=13.0-14.5GHz
Vds=8V, Idsq=0.5 Idss

Drain Current at 1dB Compression 1760 mA
Output 3rd Order Intercept Point f=13.0-14.5GHz

Vds=8V, Idsq=0.5 Idss

Saturated Drain Current Vds=3V, Vgs=0V 2200 2880 3400 mA

Transconductance Vds=3V, Vgs=0V 3000 mS

Pinch-off Voltage Vds=3V, Ids=24mA -1.0 -2.5 V

Drain Breakdown Voltage Igd=9.6mA -13 -15 V

Thermal Resistance (Au-Sn Eutectic Attach) 4.5

EIA1314A-4P

MIN TYP MAX

35.0 36.0

7.5 8.5

27 %

43 dBm

MAXIMUM RATINGS AT 25OC

SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2

Vds
Vgs

Ids

Igsf

Pin

Tch

Tstg

Pt

Drain-Source Voltage 12V 8V
Gate-Source Voltage -8V -3V
Drain Current Idss 3120mA
Forward Gate Current 360mA 60mA
Input Power 35dBm @ 3dB Compression
Channel Temperature 175oC 150oC
Storage Temperature -65/175oC -65/150oC
Total Power Dissipation 30W 25W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: [phone] Fax: [phone] Web Site: www.excelics.com

UNIT

dBm

dB

o

C/W