Excelics EFA160A Datasheet
Excelics
EFA160A
DATA SHEET
Low Distortion GaAs Power FET
+29.0dBm TYPICAL OUTPUT POWER
•
9.0dB TYPICAL POWER GAIN AT 12GHz
•
0.3 X 1600 MICRON RECESSED
•
“MUSHROOM” GATE
PASSIVATION
Si
•
3N4
ADVANCED EPITAXIAL DOPING PROFILE
•
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 30mA PER BIN RANGE
•
40
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
1dB
G
1dB
PAE
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
Gain at 1dB Compression
Vds=8V, Ids=50% Idss f=12GHz
DDDD
GGGG
SSS
95
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
840
116
50
50
80
27.0 29.0
29.0
7.0 9.0
6.5
34
SS
dBm
dB
%
48
340
100
Idss
Gm
Vp
BVgd
BVgs
Rth
Saturated Drain Current Vds=3V, Vgs=0V 260 420 600 mA
Transconductance Vds=3V, Vgs=0V 180 240 mS
Pinch-off Voltage Vds=3V, Ids=4.0mA -2.0 -3.5 V
Drain Breakdown Voltage Igd=1.6mA -12 -15 V
Source Breakdown Voltage Igs=1.6mA -7 -14 V
Thermal Resistance (Au-Sn Eutectic Attach) 30
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
40mA
28dBm
175oC
-65/175oC
4.5W
8V
-4V
475mA
7mA
@ 3dB Compression
150oC
-65/150oC
3.8W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
o
C/W
EFA160A
DATA SHEET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.936 -81.9 9.025 133.3 0.035 48.7 0.221 -106.2
2.0 0.911 -119.8 5.964 108.8 0.047 27.7 0.285 -132.0
3.0 0.903 -138.7 4.275 94.5 0.050 18.4 0.319 -141.6
4.0 0.903 -149.8 3.297 84.3 0.050 13.0 0.347 -145.0
5.0 0.900 -157.8 2.644 75.5 0.049 9.3 0.382 -147.5
6.0 0.903 -162.4 2.207 68.6 0.048 6.4 0.413 -148.0
7.0 0.905 -165.8 1.884 62.3 0.047 5.6 0.445 -148.7
8.0 0.908 -168.0 1.640 56.4 0.046 3.6 0.476 -149.5
9.0 0.913 -170.0 1.451 51.2 0.044 3.1 0.510 -150.4
10.0 0.914 -171.8 1.297 46.2 0.042 3.9 0.536 -151.0
11.0 0.918 -173.7 1.172 41.0 0.041 3.2 0.563 -152.2
12.0 0.920 -175.2 1.067 36.1 0.039 2.6 0.592 -153.8
13.0 0.924 -177.4 0.977 31.0 0.038 2.9 0.612 -155.2
14.0 0.925 -179.9 0.901 25.9 0.038 1.8 0.635 -157.2
15.0 0.925 177.5 0.836 20.8 0.038 1.6 0.653 -159.4
16.0 0.929 174.2 0.775 15.4 0.038 0.7 0.675 -161.8
17.0 0.927 171.0 0.721 10.0 0.037 1.5 0.688 -164.7
18.0 0.928 167.6 0.670 4.6 0.037 2.2 0.706 -167.7
19.0 0.927 164.8 0.626 -0.6 0.037 1.4 0.721 -171.1
20.0 0.931 162.1 0.580 -5.4 0.037 1.0 0.738 -174.6
21.0 0.945 162.3 0.502 -9.7 0.036 2.4 0.771 -178.4
22.0 0.951 161.1 0.469 -13.0 0.033 2.9 0.786 178.6
23.0 0.960 159.9 0.433 -16.9 0.035 5.0 0.803 176.2
24.0 0.961 159.6 0.409 -20.1 0.037 8.9 0.821 174.3
25.0 0.973 159.3 0.391 -22.7 0.037 10.9 0.831 172.5
26.0 0.969 159.6 0.368 -24.8 0.039 10.8 0.849 170.6
Note: The data included 0.7 mils diameter Au bonding wires:
4 gate wires, 15 mils each; 4 drain wires, 20 mils each; 10 source wires, 7 mils each.
Low Distortion GaAs Power FET
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