Excelics EFA120D-SOT89 Datasheet
15-25
Excelics EFA120D-SOT89
PRELIMINARY DATA SHEET DC-4GHz
Low Distortion GaAs Power FET
Features
•• LOW COST SURFACE-MOUNT PLASTIC PACKAGE
•• +28.0dBm TYPICAL OUTPUT POWER
•• 14.0dB TYPICAL POWER GAIN AT 2GHz
•• 0.7dB TYPICAL NOISE FIGURE AT 2GHz
•• +42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT
AT 2GHz
95-100
160-170
•• 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE
•• Si
•• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Applications
PASSIVATION
3N4
29-31
•• Analog and Digital Wireless System
•• HPA
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
Output Power at 1dB Compression f = 2GHz
Vds=7V, Ids=180mA
Gain at 1dB Compression f = 2GHz
Vds=7V, Ids=180mA
Power Added Efficiency at 1dB Compression
Vds=7V, Ids=180mA f = 2GHz
Noise Figure f = 2GHz
Vds=5V, Ids=75mA
Vds=5-7V, Ids=180mA
Output 3rd Order Intercept Point f = 2GHz
Vds=5-7V, Ids=180mA
Vds=5V, Ids=75mA
Saturated Drain Current Vds=3V, Vgs=0V 220 340 440 mA
Transconductance Vds=3V, Vgs=0V 140 180 mS
Pinch-off Voltage Vds=3V, Ids=3mA -2.0 -3.5 V
Drain Breakdown Voltage Igd=1.2mA -11 -15 V
Source Breakdown Voltage Igs=1.2mA -7 -14 V
Thermal Resistance 43*
*Overall Rth depends on case mounting.
P
1dB
G
1dB
PAE
NF
IP3
Idss
Gm
Vp
BVgd
BVgs
Rth
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Drain-Source Voltage 12V 7V
Gate-Source Voltage -8V -4V
Drain Current Idss 390mA
Forward Gate Current 30mA 5mA
Input Power 26dBm @ 3dB Compression
Channel Temperature 175oC 150oC
Storage Temperature -65/175oC -65/150oC
Total Power Dissipation 3.2 W 2.7 W
26.5 28.0
12.0 14.0
45 %
GATE
177-183
65-75
SOURCE
SOURCE
16-20
59
65-69
DRAIN
14-16
(Top View)
All Dimensions In Mils
0.7
1.2
42
33
dBm
dB
dB
dBm
o
C/W
44
5V, 75mA
7V, 180mA
PRELIMINARY DATA SHEET DC-4GHz
Low Distortion GaAs Power FET
S-PARAMETERS
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
GHz Mag Ang Mag Ang Mag Ang Mag Ang
0.1 0.974 -17.9 13.178 168.4 0.010 60.8 0.101 -48.3
0.2 0.983 -35.1 12.865 157.8 0.022 69.6 0.155 -78.1
0.3 0.969 -51.2 12.209 147.6 0.030 63.9 0.199 -94.1
0.4 0.955 -65.9 11.496 138.5 0.039 54.6 0.240 -108.2
0.5 0.942 -79.0 10.720 129.8 0.045 49.7 0.272 -118.3
1.0 0.865 -126.8 7.356 97.3 0.063 26.6 0.361 -151.1
1.5 0.742 -142.0 5.973 82.1 0.080 20.0 0.220 -155.8
2.0 0.706 -167.6 4.781 62.6 0.087 8.9 0.225 -179.9
2.5 0.681 171.4 4.029 45.6 0.095 -0.7 0.222 163.7
3.0 0.657 151.4 3.532 29.1 0.104 -10.4 0.210 148.2
3.5 0.648 129.1 3.169 11.6 0.112 -21.5 0.202 127.5
4.0 0.665 104.9 2.812 -6.5 0.118 -33.4 0.218 100.6
4.5 0.704 81.9 2.443 -24.7 0.119 -45.7 0.276 73.7
5.0 0.755 63.3 2.080 -41.3 0.116 -57.4 0.356 54.0
5.5 0.796 49.1 1.769 -56.1 0.110 -67.6 0.437 39.0
6.0 0.826 36.7 1.520 -70.2 0.105 -76.9 0.496 26.8
EFA120D-SOT89
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
GHz Mag Ang Mag Ang Mag Ang Mag Ang
0.1 0.988 -18.5 13.317 168.2 0.017 83.2 0.191 -33.8
0.2 0.990 -34.6 12.905 158.0 0.020 71.4 0.203 -52.2
0.3 0.981 -50.5 12.292 147.9 0.030 64.1 0.225 -71.4
0.4 0.974 -65.4 11.665 138.3 0.037 56.5 0.251 -86.8
0.5 0.958 -78.3 10.901 129.7 0.043 49.6 0.270 -98.8
1.0 0.867 -127.0 7.393 96.7 0.060 25.1 0.311 -137.9
1.5 0.772 -142.2 5.984 81.2 0.075 18.8 0.192 -131.4
2.0 0.712 -167.8 4.755 61.3 0.081 7.5 0.174 -157.6
2.5 0.688 169.6 4.027 43.8 0.089 -2.0 0.174 -171.2
3.0 0.667 149.4 3.515 26.8 0.095 -11.7 0.157 172.8
3.5 0.653 127.5 3.159 9.3 0.103 -21.9 0.135 152.4
4.0 0.673 102.8 2.804 -9.2 0.107 -33.5 0.135 115.7
4.5 0.712 81.5 2.430 -27.0 0.109 -44.7 0.180 75.4
5.0 0.762 63.3 2.093 -43.6 0.107 -55.7 0.258 52.4
5.5 0.802 48.8 1.789 -59.0 0.102 -65.1 0.347 37.1
6.0 0.827 35.5 1.556 -73.1 0.099 -73.7 0.413 27.0
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