Excelics EFA120B, EFA120BV Datasheet
550
50
156
48
100
350
50 12095
40
DD
G
G
Excelics
EFA120B/EFA120BV
DATA SHEET
Low Distortion GaAs Power FET
•
+28.0dBm TYPICAL OUTPUT POWER
•
9.5dB TYPICAL POWER GAIN FOR EFA120B AND
11.5dB FOR EFA120BV AT 12GHz
•
0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
•
Si3N4 PASSIVATION
•
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
•
EFA120BV WITH VIA HOLE SOURCE GROUNDING
•
Idss SORTED IN 20mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS
EFA120B
EFA120BV
UNIT
MIN TYP MAX MIN TYP MAX
P
1dB
Output Power at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
26.0 28.0
28.0
26.0 28.0
28.0
dBm
G
1dB
Gain at 1dB Compression f=12GHz
Vds=8V, Ids=50% Idss f=18GHz
8.0
9.5
7.0
10.0
11.5
9.0
dB
PAE
Gain at 1dB Compre s sio n
Vds=8V, Ids=50% Idss f=12GHz
34
36
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V 200 340 440 200 340 440 mA
Gm
Transconductance Vds=3V, Vgs=0V 140 180 140 180 mS
Vp
Pinch-off Voltage Vds=3V, Ids=3.0mA -2.0 -3.5 -2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=1.2mA -12 -15 -12 -15 V
BVgs
Source Breakdown Voltage Igs=1.2mA -7 -14 -7 -14 V
Rth
Thermal Resistance (Au-Sn Eutectic Attach) 40 30
o
C/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
EFA120B
EFA120BV
ABSOLUTE1 CONTINUOUS2 ABSOLUTE1 CONTINUOUS2
Vds
Drain-Source Voltage 12V 8V 12V 8V
Vgs
Gate-Source Voltage -8V -4V -8V -4V
Ids
Drain Current Idss 355mA Idss Idss
Igsf
Forward Gate Current 30mA 5mA 30mA 5mA
Pin
Input Power 26dBm @ 3dB
Compression
26dBm @ 3dB
Compression
Tch
Channel Temperature 175
o
C 150oC 175oC 150oC
Tstg
Storage Temperature -65/175
o
C -65/150oC -65/175oC -65/150oC
Pt
Total Power Dissipation 3.4W 2.8W 4.5W 3.8W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75 ± 20 microns
All Dimensions In Microns
:
Via Hole
No Via Hole For EFA120B
EFA120B/EFA120BV
DATA SHEET
Low Distortion GaAs Power FET
EFA120B
S-PARAMETERS
EFA120B 8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.950 -67.1 8.659 139.4 0.034 55.2 0.254 -47.4
2.0 0.911 -106.2 6.163 114.7 0.047 36.7 0.222 -79.6
4.0 0.881 -138.8 3.609 89.3 0.054 21.6 0.212 -106.1
6.0 0.875 -153.5 2.524 72.4 0.053 17.5 0.251 -118.6
8.0 0.873 -163.0 1.949 58.5 0.052 14.4 0.307 -126.7
10.0 0.871 -170.7 1.573 46.1 0.047 13.8 0.370 -134.4
12.0 0.878 -180.0 1.320 32.9 0.047 12.5 0.446 -143.0
14.0 0.883 173.1 1.105 20.5 0.045 13.1 0.521 -152.2
16.0 0.888 165.7 0.921 7.9 0.045 12.7 0.583 -162.2
18.0 0.909 162.3 0.775 -2.9 0.046 11.8 0.637 -172.1
20.0 0.916 159.4 0.648 -14.2 0.049 12.9 0.685 177.4
22.0 0.914 160.6 0.543 -21.8 0.054 15.6 0.715 167.3
24.0 0.933 161.0 0.483 -28.9 0.061 20.2 0.740 158.7
26.0 0.923 160.0 0.419 -34.4 0.072 24.4 0.758 152.4
S-PARAMETERS EFA120BV 8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.937 -64.1 10.367 141.1 0.031 55.1 0.290 -50.6
2.0 0.907 -103.9 7.564 117.0 0.046 34.4 0.274 -82.9
4.0 0.887 -140.6 4.476 90.1 0.052 14.6 0.284 -110.6
6.0 0.888 -157.4 3.096 72.9 0.051 5.1 0.327 -122.1
8.0 0.892 -167.0 2.337 59.4 0.050 -0.3 0.378 -129.3
10.0 0.897 -173.6 1.864 47.5 0.048 -7.0 0.432 -135.5
12.0 0.904 -179.8 1.553 35.8 0.046 -11.6 0.483 -142.6
14.0 0.906 174.0 1.317 24.2 0.044 -15.6 0.527 -150.2
16.0 0.911 167.5 1.134 12.0 0.044 -21.1 0.572 -159.1
18.0 0.917 160.9 0.975 -0.1 0.044 -25.1 0.618 -168.5
20.0 0.922 155.1 0.837 -11.7 0.041 -30.2 0.667 -177.5
22.0 0.936 154.0 0.702 -21.1 0.039 -31.4 0.723 173.1
24.0 0.941 152.0 0.603 -29.3 0.037 -31.3 0.774 167.9
26.0 0.934 149.5 0.530 -36.6 0.034 -24.8 0.818 165.6
Note: The data included 0.7 mils diameter Au bonding wires; 2 gate wires, 15 mils each; 2 drain wires, 20 mils each;
6 source wires, 7 mils each; no source wires for EFA120BV.
P-1dB & PAE vs. Vds
10
15
20
25
30
35
45678910
Drain -Source Voltage (V)
P-1dB (dBm
20
25
30
35
40
45
50
55
60
PAE (%
)
f = 12 GHz
Ids = 50% Idss
Pout & PAE vs. Pin
0
10
20
30
40
-10-5051015202530
Pin (dBm)
Pou t (d B m) or PAE (
%
f = 12 GHz
Vds = 8 V, Ids = 50% Idss
PAE
Pout
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