Excelics EFA080A-70 Datasheet
Excelics
EFA080A-70
DATA SHEET
Low Distortion GaAs Power FET
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
•
+23.5dBm TYPICAL OUTPUT POWER
•
7.0 dB TYPICAL POWER GAIN AT 12GHz
•
0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
•
PASSIVATION
Si
•
3N4
ADVANCED EPITAXIAL DOPING PROFILE
•
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
180 Min.
S
(All Leads)
40
All Dimensions In mils.
20
D
G
44
19
4
S
70
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
1dB
G
1dB
PAE
Idss
Output Power at 1dB Compression f=12GHz
Vds=5V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=5V, Ids=50% Idss f=18GHz
Power Added Efficiency at 1dB Compression
Vds=5V, Ids=50% Idss f=12GHz
Saturated Drain Current Vds=3V, Vgs=0V 130 210 300 mA
21.5 23.5
23.5
6.0 7.0
4.5
30
dBm
dB
%
Gm
Vp
BVgd
BVgs
Rth
* Overall Rth depends on case mounting.
Transconductance Vds=3V, Vgs=0V 90 120 mS
Pinch-off Voltage Vds=3V, Ids=2.0mA -2.0 -3.5 V
Drain Breakdown Voltage Igd=1.0mA -10 -15 V
Source Breakdown Voltage Igs=1.0mA -6 -14 V
Thermal Resistance 135
*
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
8V
-5V
Idss
20mA
22dBm
175oC
-65/175oC
1.1W
5V
-4V
185mA
4mA
@ 3dB Compression
150 oC
-65/150 oC
0.9W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA080A-70
DATA SHEET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.909 -42.3 6.038 146.2 0.032 59.9 0.452 -26.1
2.0 0.826 -77.0 5.067 118.9 0.049 45.3 0.405 -47.4
3.0 0.766 -104.2 4.189 96.7 0.059 33.8 0.383 -64.2
4.0 0.724 -128.4 3.590 77.3 0.064 26.9 0.366 -77.3
5.0 0.691 -148.9 3.129 59.7 0.068 21.6 0.338 -90.8
6.0 0.672 -163.0 2.766 44.3 0.072 18.6 0.317 -108.5
7.0 0.653 -178.5 2.487 29.4 0.075 15.9 0.322 -122.3
8.0 0.639 167.4 2.266 14.8 0.079 14.7 0.306 -136.5
9.0 0.645 144.9 2.073 -1.1 0.087 11.4 0.308 -148.4
10.0 0.658 126.6 1.885 -16.7 0.096 5.8 0.317 -166.1
11.0 0.655 116.0 1.793 -31.1 0.109 -0.3 0.337 171.2
12.0 0.667 101.8 1.690 -46.7 0.124 -7.8 0.366 150.2
13.0 0.719 84.9 1.512 -62.2 0.133 -17.2 0.387 131.4
14.0 0.752 70.5 1.334 -76.1 0.138 -25.8 0.419 116.3
15.0 0.754 57.6 1.230 -91.4 0.148 -37.2 0.480 98.5
16.0 0.763 43.0 1.113 -108.5 0.152 -49.6 0.527 78.5
17.0 0.760 32.5 0.951 -120.4 0.153 -55.6 0.535 66.4
18.0 0.779 25.1 0.886 -129.9 0.169 -66.8 0.584 58.5
19.0 0.788 10.8 0.815 -144.0 0.166 -77.8 0.627 45.7
20.0 0.818 -1.5 0.742 -158.2 0.169 -89.6 0.679 32.6
21.0 0.833 -8.6 0.680 -169.6 0.171 -99.0 0.684 22.4
22.0 0.808 -17.7 0.639 179.7 0.181 -108.3 0.671 15.3
23.0 0.803 -34.1 0.601 164.5 0.188 -122.5 0.659 -0.8
24.0 0.820 -48.4 0.550 147.3 0.191 -139.2 0.662 -20.3
25.0 0.788 -59.1 0.524 135.1 0.202 -151.7 0.666 -31.0
26.0 0.782 -73.7 0.538 121.1 0.236 -164.9 0.639 -45.2
Low Distortion GaAs Power FET
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