Excelics EFA060B-70 Datasheet
Excelics
EFA060B-70
DATA SHEET
Low Distortion GaAs Power FET
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
•
+24.0dBm TYPICAL OUTPUT POWER
•
7.5 dB TYPICAL POWER GAIN AT 12GHz
•
0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
•
PASSIVATION
Si
•
3N4
ADVANCED EPITAXIAL DOPING PROFILE
•
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
180 Min.
S
(All Leads)
40
All Dimensions In mils.
20
D
G
44
19
4
S
70
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
1dB
G
1dB
PAE
Output Power at 1dB Compression f=12GHz
Vds=6V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=6V, Ids=50% Idss f=18GHz
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss f=12GHz
22.0 24.0
24.0
6.0 7.5
5.0
33
dBm
dB
%
Idss
Gm
Vp
BVgd
BVgs
Rth
* Overall Rth depends on case mounting.
Saturated Drain Current Vds=3V, Vgs=0V 100 170 240 mA
Transconductance Vds=3V, Vgs=0V 70 90 mS
Pinch-off Voltage Vds=3V, Ids=1.5mA -2.0 -3.5 V
Drain Breakdown Voltage Igd=1.0mA -10 -15 V
Source Breakdown Voltage Igs=1.0mA -6 -14 V
Thermal Resistance 175
*
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
10V
-6V
Idss
15mA
22dBm
175oC
-65/175oC
780mW
6V
-4V
110mA
2.5mA
@ 3dB Compression
150 oC
-65/150 oC
650mW
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA060B-70
DATA SHEET
S-PARAMETERS
6V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.959 -36.8 5.607 150.2 0.021 69.7 0.673 -15.7
2.0 0.881 -70.5 4.945 123.1 0.036 52.6 0.632 -31.5
3.0 0.810 -99.4 4.231 100.1 0.044 41.1 0.600 -44.6
4.0 0.753 -126.7 3.718 79.4 0.046 32.4 0.577 -54.8
5.0 0.712 -151.3 3.295 60.6 0.048 28.1 0.546 -64.9
6.0 0.687 -169.6 2.954 43.8 0.050 27.6 0.516 -78.2
7.0 0.669 170.6 2.667 27.3 0.052 27.4 0.508 -90.3
8.0 0.660 152.5 2.440 11.7 0.055 30.2 0.490 -101.7
9.0 0.676 127.8 2.207 -5.2 0.064 29.7 0.490 -111.1
10.0 0.701 108.4 2.002 -21.9 0.074 23.8 0.482 -126.3
11.0 0.712 95.0 1.914 -38.1 0.087 16.1 0.478 -147.5
12.0 0.734 79.3 1.812 -55.4 0.100 6.7 0.485 -168.1
13.0 0.786 64.1 1.623 -71.5 0.107 -4.6 0.477 173.7
14.0 0.814 50.9 1.436 -86.6 0.108 -14.9 0.486 155.8
15.0 0.822 36.8 1.325 -104.7 0.113 -29.1 0.532 132.1
16.0 0.827 21.3 1.192 -124.5 0.113 -45.2 0.560 107.3
17.0 0.815 10.9 1.036 -138.3 0.111 -52.3 0.563 92.5
18.0 0.824 2.0 0.978 -151.3 0.119 -69.9 0.622 79.4
19.0 0.842 -12.9 0.870 -168.6 0.103 -84.5 0.654 62.6
20.0 0.865 -25.0 0.793 174.4 0.098 -99.1 0.709 45.8
21.0 0.837 -34.9 0.737 158.8 0.095 -113.3 0.716 32.5
22.0 0.803 -48.2 0.703 144.6 0.099 -127.5 0.707 22.7
23.0 0.828 -65.6 0.636 126.3 0.099 -145.0 0.692 3.5
24.0 0.832 -79.0 0.563 107.3 0.104 -163.0 0.696 -18.6
25.0 0.762 -97.6 0.529 90.4 0.119 -179.7 0.727 -31.7
26.0 0.779 -120.5 0.523 72.5 0.149 163.3 0.710 -48.8
Low Distortion GaAs Power FET
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