Excelics EFA040A-70 DATA SHEET

Excelics

SUNSTAR微波光电 http://www.rfoe.net/ TEL:[phone] FAX:[phone] E-MAIL:[e-mail]

SUNSTAR射频通信 http://www.rfoe.net/ TEL:[phone] FAX:[phone] E-MAIL:[e-mail]

EFA040A-70

DATA SHEET

Low Distortion GaAs Power FET

NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE

•

+22.0dBm TYPICAL OUTPUT POWER

•

8.0dB TYPICAL POWER GAIN AT 12GHz

•

0.3 X 400 MICRON RECESSED “MUSHROOM” GATE

•

Si

•

•

PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY

PASSIVATION

3N4

ADVANCED EPITAXIAL DOPING PROFILE

44

19
4

180 Min.

S

(All Leads)

40

All Dimensions In mils.

20

D

S

70

G

ELECTRICAL CHARACTERISTICS (Ta = 25 OC)

SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT

P

1dB

G

1dB

PAE

Idss

Output Power at 1dB Compression f=12GHz
Vds=6V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=6V, Ids=50% Idss f=18GHz
Gain at 1dB Compression
Vds=6V, Ids=50% Idss f=12GHz

Saturated Drain Current Vds=3V, Vgs=0V 60 105 160 mA

20.0 22.0

22.0

6.5 8.0

5.0

33

dBm

dB

%

Gm
Vp
BVgd
BVgs
Rth

* Overall Rth depends on case mounting.

Transconductance Vds=3V, Vgs=0V 45 60 mS
Pinch-off Voltage Vds=3V, Ids=1.0 mA -2.0 -3.5 V
Drain Breakdown Voltage Igd=1.0mA -10 -15 V
Source Breakdown Voltage Igs=1.0mA -6 -14 V

*

Thermal Resistance 250

oC/W

MAXIMUM RATINGS AT 25OC

SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2

Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt

Note: 1 Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation

10V

-6V
Idss
10mA
21dBm
175oC

-65/175oC
550mW

6V

-4V
75mA

1.5mA

@ 3dB Compression

150 oC

-65/150 oC
445mW

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: [phone] Fax: [phone] Web Site: www.excelics.com

SUNSTAR微波光电 http://www.rfoe.net/ TEL:[phone] FAX:[phone] E-MAIL:[e-mail]

SUNSTAR射频通信 http://www.rfoe.net/ TEL:[phone] FAX:[phone] E-MAIL:[e-mail]

EFA040A-70

DATA SHEET

S-PARAMETERS

6V, 1/2 Idss

FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---

(GHz) MAG ANG MAG ANG MAG ANG MAG ANG

1.0 0.971 -30.2 4.747 154.4 0.021 72.3 0.714 -14.0

2.0 0.908 -59.1 4.348 130.0 0.037 55.5 0.681 -29.1

3.0 0.842 -84.8 3.860 108.4 0.047 42.9 0.651 -42.1

4.0 0.782 -109.8 3.516 88.8 0.052 33.0 0.626 -52.4

5.0 0.726 -133.4 3.212 70.4 0.055 24.9 0.592 -62.1

6.0 0.686 -152.0 2.939 53.7 0.055 20.6 0.558 -74.9

7.0 0.652 -172.6 2.687 37.1 0.055 16.8 0.543 -86.4

8.0 0.626 167.7 2.492 21.4 0.054 16.2 0.517 -96.6

9.0 0.631 140.1 2.292 4.2 0.057 17.8 0.511 -104.6

10.0 0.652 117.8 2.096 -12.5 0.063 14.5 0.497 -118.4

11.0 0.659 103.2 2.002 -28.6 0.073 9.8 0.485 -137.9

12.0 0.681 86.0 1.899 -45.5 0.083 2.8 0.480 -157.0

13.0 0.739 69.3 1.706 -61.4 0.088 -6.5 0.463 -173.7

14.0 0.776 55.3 1.513 -76.5 0.091 -16.1 0.465 168.8

15.0 0.787 41.1 1.400 -94.1 0.095 -29.4 0.498 144.8

16.0 0.798 25.7 1.269 -113.2 0.094 -44.6 0.518 120.3

17.0 0.789 15.5 1.103 -126.3 0.092 -50.4 0.516 105.9

18.0 0.803 7.3 1.043 -138.6 0.101 -67.9 0.574 93.1

19.0 0.821 -7.7 0.928 -155.5 0.085 -83.5 0.604 75.9

20.0 0.846 -19.7 0.854 -171.7 0.080 -98.6 0.657 59.9

21.0 0.829 -28.2 0.801 173.6 0.076 -113.9 0.654 47.1

22.0 0.795 -39.9 0.760 160.1 0.076 -129.4 0.650 38.6

23.0 0.808 -56.6 0.695 142.7 0.075 -147.4 0.629 20.9

24.0 0.819 -69.7 0.633 124.1 0.078 -168.0 0.617 0.1

25.0 0.756 -84.3 0.617 107.6 0.089 176.3 0.618 -14.7

26.0 0.754 -103.8 0.634 90.8 0.117 161.8 0.599 -30.8

Low Distortion GaAs Power FET