![](/html/70/70e4/70e4b635814258b2df9b366733825727c32b5a2b042eb8932339b7a14d6bc191/bg1.png)
Excelics
EFA025A-70
DATA SHEET
Low Di stortion GaAs Power FET
• NON-HERME T IC LOW COST CERAMIC 70mil PACKAGE
• +20.0dBm TYPICAL OUTPUT POWER
• 10.0dB T YPICAL POWER GAIN AT 12GHz
• TYPICAL 1.5 dB NOISE FIGURE AND 10dB ASSOCIATED
GAIN AT 12GHz
• 0.3 X 250 MICRON RECESSED “MUSH ROOM” GATE
• Si
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH PO W ER E FFICIENCY ,
LINEARITY AND RELIABILITY
PASSIVATION
3N4
0LQ
6
$OO /HDGV
All Dimension s In mils.
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
G
PAE
NF
GA
Idss
Gm
Vp
BVgd
BVgs
Rth
* Overall Rth depends on case mounting.
Output Power at 1dB Compression f=12GHz 20
1dB
Vds=6V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz 10
1dB
Vds=6V, Ids=50% Idss f=18GHz
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss f=12GHz
Noise Figure Vds=3V,Ids=15mA f=12GHz 1.5 dB
Associated Gain Vds=3V,Ids=15mA f=12GHz 10 dB
Saturated Drain Current Vds=3V, Vgs=0V 35 65 105 mA
Transconductance Vds=3V, Vgs=0V 30 40 mS
Pinch-off Voltage Vds=3V, Ids=1.0 mA -2 -3.5 V
Drain Breakdown Voltage Igd=1.0mA -10 -15 V
Source Breakdown Voltage Igs=1.0mA -6 -14 V
Thermal Resistance 370
17
20
8.5
7
35
MAXIMUM RATINGS AT 25OC
'
6
*
dBm
dB
%
*
oC/W
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1 Exceedi ng any of the above ratings may result in permanent damage.
2. E xceedin g any of the above ratin gs may reduce MTTF below design goals.
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
10V
-6V
Idss
6mA
20dBm
175oC
-65/175oC
370mW
6V
-4V
52mA
1mA
@ 3dB Compression
150 oC
-65/150 oC
310mW
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
![](/html/70/70e4/70e4b635814258b2df9b366733825727c32b5a2b042eb8932339b7a14d6bc191/bg2.png)
EFA025A-70
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
3V,15mA 6V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
GHz Mag Ang Mag Ang Mag Ang Mag Ang
1.0 1.020 -17.0 4.385 159.6 0.030 75.6 0.549 -22.5
2.0 0.956 -37.8 3.291 142.6 0.043 64.4 0.611 -28.0
3.0 0.911 -56.4 3.114 125.5 0.060 52.4 0.601 -41.2
4.0 0.867 -73.0 2.944 109.6 0.072 42.4 0.577 -52.4
5.0 0.814 -89.2 2.856 93.8 0.084 32.3 0.535 -63.9
6.0 0.748 -105.5 2.697 78.2 0.089 22.3 0.514 -78.5
7.0 0.689 -124.2 2.523 64.0 0.092 14.6 0.511 -85.8
8.0 0.656 -144.7 2.424 49.6 0.096 6.5 0.489 -92.9
9.0 0.636 -151.0 2.334 36.0 0.098 -2.9 0.384 -111.2
10.0 0.584 -166.5 2.283 21.7 0.096 -4.4 0.390 -131.4
11.0 0.545 164.8 2.150 7.2 0.095 -10.8 0.432 -132.6
12.0 0.552 142.3 2.040 -5.8 0.095 -15.2 0.409 -133.6
13.0 0.589 134.6 1.982 -20.5 0.102 -21.4 0.351 -168.6
14.0 0.563 120.6 1.877 -36.0 0.100 -31.0 0.371 162.5
15.0 0.571 96.0 1.672 -50.1 0.096 -35.6 0.387 166.7
16.0 0.607 73.2 1.625 -63.4 0.098 -41.9 0.374 168.3
17.0 0.625 77.3 1.617 -78.1 0.108 -49.6 0.392 116.3
18.0 0.618 58.5 1.411 -92.5 0.105 -58.9 0.476 108.4
19.0 0.643 42.1 1.361 -102.2 0.109 -68.8 0.428 110.5
20.0 0.691 26.8 1.329 -116.0 0.103 -80.6 0.411 101.9
21.0 0.653 22.4 1.294 -135.8 0.105 -95.7 0.539 62.8
22.0 0.634 13.4 1.160 -146.5 0.103 -105.5 0.620 64.2
23.0 0.655 -8.1 1.172 -161.2 0.110 -120.8 0.479 61.0
24.0 0.646 -25.3 1.170 178.6 0.119 -141.1 0.478 34.5
25.0 0.563 -39.9 1.074 160.7 0.118 -159.4 0.624 17.3
26.0 0.596 -47.4 1.048 149.8 0.132 -169.1 0.562 15.8
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.985 -18.8 3.482 161.4 0.013 76.6 0.803 -11.3
2.0 0.953 -38 3.329 142.7 0.025 65.9 0.786 -24.1
3.0 0.913 -56 3.108 125.5 0.031 54.2 0.768 -36
4.0 0.872 -73.2 2.97 109.5 0.037 46.2 0.755 -45.6
5.0 0.825 -89.3 2.867 94.3 0.04 38.8 0.731 -54.5
6.0 0.779 -102.7 2.713 79.7 0.04 34.4 0.703 -66.2
7.0 0.734 -117.1 2.559 65.3 0.039 30.9 0.685 -76.8
8.0 0.688 -130.5 2.448 52.1 0.033 33.5 0.66 -85.6
9.0 0.642 -152.3 2.42 37.6 0.037 44.6 0.661 -91.4
10.0 0.614 -173.2 2.355 21.8 0.044 48.1 0.654 -102.2
11.0 0.591 177.4 2.312 8.6 0.054 50.4 0.642 -117.7
12.0 0.572 163.7 2.282 -5.4 0.071 50.2 0.641 -131.9
13.0 0.598 138.2 2.188 -22 0.086 40.5 0.638 -144.4
14.0 0.631 115.4 2.036 -38.8 0.097 29.4 0.642 -158.9
15.0 0.631 102.2 1.97 -54.9 0.112 18.3 0.667 179.8
16.0 0.634 87.3 1.909 -72.4 0.126 5.6 0.685 158.4
17.0 0.658 70.3 1.685 -87.7 0.128 -2.1 0.665 145.1
18.0 0.694 59 1.58 -99.5 0.15 -17.2 0.731 132.5
19.0 0.672 42 1.467 -116.1 0.137 -30.5 0.761 113.1
20.0 0.707 25.5 1.399 -132.9 0.143 -43.3 0.836 96.6
21.0 0.761 14.9 1.29 -148.4 0.143 -56.3 0.826 84.7
22.0 0.736 3.9 1.184 -161.3 0.138 -68.7 0.83 76
23.0 0.703 -15.3 1.103 -178.5 0.134 -84.6 0.824 58.8
24.0 0.723 -33.5 1.043 162.6 0.134 -101.6 0.841 41.2
25.0 0.705 -44.7 1.017 146.3 0.14 -117.8 0.843 28.4
26.0 0.676 -59.8 1.017 131.8 0.156 -131 0.831 16.6
S-PARAMETERS
EFA025A-70
Noise Parameters
Vds=3V, Ids=15mA
Freq. Popt Nfmin
(GHz) (MAG) (ANG) (dB) Rn/50
2 0.83 28 0.53 0.58
4 0.75 59 0.65 0.48
6 0.65 85 0.85 0.33
8 0.58 128 1.05 0.21
10 0.45 147 1.35 0.11
12 0.40 -170 1.55 0.10
14 0.41 -111 1.90 0.27
16 0.47 -69 2.25 0.58
18 0.53 -44 2.60 1.00
20 0.62 -14 2.90 1.38
22 0.57 1 3.20 1.68
24 0.59 39 3.50 1.77
26 0.57 66 3.80 1.10