![](/html/1b/1b20/1b2098bc58de6fbf5650ecb10dc2c3024181277eb65f0964800a2e0525bd8592/bg1.png)
Excelics
EFA018A-70
DATA SHEET
Low Distortion GaAs Power FET
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
•
+18.5dBm TYPICAL OUTPUT POWER
•
10.5dB TYPICAL POWER GAIN AT 12GHz
•
TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED
•
GAIN AT 12GHz
0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
•
Si
•
•
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
PASSIVATION
3N4
ADVANCED EPITAXIAL DOPING PROFILE
180 Min.
S
(All Leads)
40
All Dimensions In mils.
20
D
S
70
G
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
1dB
G
1dB
PAE
NF
Ga
Output Power at 1dB Compression f=12GHz
Vds=6V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=6V, Ids=50% Idss f=18GHz
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss f=12GHz
Noise Figure f=12GHz
Vds=2V, Ids=15mA
Associated Gain f=12GHz
Vds=2V, Ids=15mA
16.5 18.5
18.5
9.0 10.5
8.0
33
1.1
10.5
dBm
dB
dB
dB
%
44
19
4
Idss
Gm
Vp
BVgd
BVgs
Rth
* Overall Rth depends on case mounting.
Saturated Drain Current Vds=3V, Vgs=0V 25 50 80 mA
Transconductance Vds=3V, Vgs=0V 20 30 mS
Pinch-off Voltage Vds=3V, Ids=1.0 mA -2.0 -3.5 V
Drain Breakdown Voltage Igd=0.5mA -10 -15 V
Source Breakdown Voltage Igs=0.5mA -6 -14 V
Thermal Resistance 480
*
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
10V
-6V
Idss
4mA
17dBm
175oC
-65/175oC
285mW
6V
-4V
40mA
0.7mA
@ 3dB Compression
150 oC
-65/150 oC
240mW
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
![](/html/1b/1b20/1b2098bc58de6fbf5650ecb10dc2c3024181277eb65f0964800a2e0525bd8592/bg2.png)
EFA018A-70
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
6V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.992 -15.2 2.467 164.6 0.013 80.7 0.813 -9.6
2.0 0.973 -31.3 2.404 148.7 0.024 66.9 0.799 -21.0
3.0 0.948 -47.1 2.307 133.4 0.033 56.3 0.788 -32.1
4.0 0.927 -62.2 2.278 119.2 0.040 47.1 0.778 -40.9
5.0 0.896 -76.8 2.271 105.4 0.046 38.0 0.757 -49.5
6.0 0.862 -89.8 2.217 91.4 0.050 28.7 0.730 -60.6
7.0 0.824 -103.6 2.144 77.5 0.050 18.8 0.709 -71.2
8.0 0.785 -116.7 2.099 64.5 0.047 8.7 0.679 -80.0
9.0 0.745 -137.4 2.141 50.1 0.043 6.9 0.675 -85.5
10.0 0.712 -157.8 2.132 34.6 0.041 4.4 0.658 -95.2
11.0 0.685 -167.8 2.113 21.5 0.039 4.7 0.636 -109.4
12.0 0.659 178.6 2.119 8.0 0.039 11.3 0.625 -121.6
13.0 0.661 151.4 2.080 -9.0 0.043 10.3 0.608 -130.8
14.0 0.678 126.4 1.968 -26.0 0.047 7.7 0.598 -141.9
15.0 0.668 112.7 1.941 -42.0 0.053 3.2 0.600 -161.3
16.0 0.663 96.6 1.927 -58.8 0.059 -4.7 0.592 -179.9
17.0 0.681 77.3 1.733 -74.2 0.059 -3.2 0.558 170.3
18.0 0.716 64.4 1.654 -86.1 0.081 -17.9 0.607 158.0
19.0 0.704 48.0 1.596 -103.7 0.070 -34.8 0.622 135.6
20.0 0.736 30.3 1.560 -120.9 0.071 -45.7 0.677 119.0
21.0 0.799 18.9 1.480 -136.6 0.072 -58.3 0.666 107.4
22.0 0.786 7.3 1.378 -151.5 0.067 -77.2 0.676 95.1
23.0 0.753 -11.7 1.305 -170.3 0.060 -97.4 0.674 76.0
24.0 0.771 -30.9 1.249 169.6 0.055 -120.5 0.671 57.6
25.0 0.753 -43.1 1.245 152.3 0.055 -141.1 0.655 42.6
26.0 0.720 -58.4 1.255 136.8 0.060 -161.3 0.649 28.8