EVERLIGHT 4N 35 Datasheet

A

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER 4N2X Series 4N3X Series H11AX Series

Features:

• 4N2X series: 4N25, 4N26, 4N27, 4N28

• 4N3X series: 4N35, 4N36, 4N37, 4N38

• H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5

• High isolation voltage between input and output

(Viso=5000 V rms)

• Creepage distance >7.62 mm

• Operating temperature up to +110°C

• Compact dual-in-line package

• Pb free and RoHS compliant.

• UL approved (No. E214129)

• VDE approved (No. 132249)

• SEMKO approved

• NEMKO approval

• DEMKO approval

• FIMKO approval

• CSA approved

• CQC approved

Description

The 4N2X, 4N3X, H11AX series of devices each consist of an infrared emitting diode optically coupled to a phototransistor. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD o ption.

pplications

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

Pin Configuration

1. Anode

2. Cathode

3. No Connection

4. Emitter

5. Collector

6. Base

Schematic

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DATASHEET

A

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER 4N2X Series 4N3X Series H11AX Series

bsolute Maximum Ratings (Ta=25℃)

Parameter Symbol Rating Unit

60 mA

1 A 6 V

100 mW

3.8 mW/°C 80 V 80 V

7 V

Input

Forward current Peak forward current (t = 10µs)

Reverse voltage Power dissipation (TA = 25°C)

Derating factor (above 100°C)

Collector-Emitter voltage Collector-Base voltage Emitter-Collector voltage

V V V

I

FM

V

P

CEO

CBO

ECO

F

R

D

Output

Emitter-Base voltage

V

EBO

7 V

150 mW

Power dissipation (TA = 25°C) Derating factor (above 100°C)

Total Power Dissipation

Isolation Voltage*1 V

Operating Temperature

P

T

P

TOT

ISO

OPR

C

9.0 mW/°C

200

5000

-55 to 110

mW

V rms

°C Storage Temperature Soldering Temperature*2 T

T

STG

SOL

-55 to 125 260

°C °C

Notes:

*1

AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 & 3 are shorted together, and pins 4, 5 & 6 are shorted together.

*2 For 10 seconds

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DATASHEET 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER 4N2X Series 4N3X Series H11AX Series

Electro-Optical Characteristics (Ta=25℃ unless specified otherwise)

Input

Parameter Symbol Min. Typ. Max. Unit Condition

Forward voltage Reverse current Input capacitance

Output

Parameter Symbol Min Typ. Max. Unit Condition

Collector-Base dark current

4N2X CollectorEmitter dark current

Collector-Emitter breakdown voltage Collector-Base breakdown voltage Emitter-Collector breakdown voltage Emitter-Base breakdown voltage Collector-Emitter capacitance

H11AX

4N3X - - 50

* Typical values at Ta = 25°C

V

F

I

R

C

in

I

CBO

I

CEO

BV

CEO

80 - - V IC=0.1mA

BV

CBO

BV

ECO

BV

EBO

C

- 8 - pF VCE=0V, f=1MHz

CE

- 1.2 1.5 V

- - 10 µA

- 30 - pF V = 0, f = 1MHz

- - 20 nA

- - 50 nA

80 - - V

7 - - V 7 - - V

IF = 10mA VR = 6V

V

= 10V

CB

V

= 10V, IF=0mA

CE

V

= 60V, IF=0mA

CE

Ic=1mA

IE=0.1mA IE=0.1mA

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DATASHEET 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER 4N2X Series 4N3X Series H11AX Series

Transfer Characteristics

Parameter Symbol Min Typ. Max. Unit Condition

4N35, 4N36,

4N37

H11A1

Current

H11A5

Transfer ratio

4N25, 4N26,

4N38,

H11A2, H11A3

4N27, 4N28,

H11A4

4N25, 4N26,

4N27, 4N28

Collector-

Emitter saturation voltage

4N35, 4N36,

4N37 H11A1,H11A2, H11A3,H11A4,

H11A5

4N38 - - 1.0

Isolation resistance Input-output capacitance

4N25, 4N26, 4N27, 4N28,

H11A1,H11A2,

Turn-on time

H11A3,H11A4,

H11A5

4N35, 4N36,

4N37, 4N38

CTR

V

CE(sat)

R C

Ton

100 - -

50 - 30 - -

%

= ±10mA ,V

I

F

CE

= 10V

20 - -

10 - -

- - 0.5

I

= 50mA, Ic = 2mA

F

- - 0.3 V

I

= 10mA, Ic = 0.5mA

F

- - 0.4

I

= 20mA, Ic = 4mA

F

11

- -

IO

10

Ω

- 0.2 - pF

- 3 10

µs

- 10 12

V

= 500Vdc

IO

VIO = 0, f = 1MHz

V

= 10V, IF = 10mA,

CC

= 100Ω

R

L

See Fig. 11

V

= 10V, IC = 2mA,

CC

= 100Ω, See Fig. 11

R

L

4N25, 4N26, 4N27, 4N28,

H11A1,H11A2,

Turn-off

H11A3,H11A4,

time

4N35, 4N36,

4N37, 4N38

* Typical values at Ta = 25°C

4

H11A5

Toff

- 3 10

µs

- 9 12

V

= 10V, IF = 10mA,

CC

= 100Ω

R

L

See Fig. 11

V

= 10V, IC = 2mA,

CC

= 100Ω, See Fig. 11

R

L

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DATASHEET 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER 4N2X Series 4N3X Series H11AX Series

Typical Electro-Optical Characteristics Curves

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DATASHEET

f

r

f

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER 4N2X Series 4N3X Series H11AX Series

V

CC

IF

IC

R

L

Output

Input Pulse

Input

R

BE

IN

Figure 11. Switching T i me Test Circuit & Waveforms

Output Pulse

t

on

10%

90%

t t

of

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DATASHEET 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER 4N2X Series 4N3X Series H11AX Series

Order Information

Part Number

4NXXY(Z)-V

or

H11AXY(Z)-V

Note

XX = Part no. for 4NXX series (25, 26, 27, 28, 35, 36, 37 or 38) X = Part no. for H11AX series (1, 2, 3, 4, or 5) Y = Lead form option (S, S1, M or none) Z = Tape and reel option (TA, TB or none). V = VDE safety (optional)

Option Description Packing quantity

None Standard DIP-6 65 units per tube M Wide lead bend (0.4 inch spacing) 65 units per tube S (TA) Surface mount lead form + T A tape & reel option 1000 units per reel S (TB) Surface mount lead form + TB tape & reel option 1000 units per reel S1 (TA) Surface mount lead form (low profile) + TA tape & reel option 1000 units per reel S1 (TB) Surface mount lead form (low profile) + TB tape & reel option 1000 units per reel

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DATASHEET 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER 4N2X Series 4N3X Series H11AX Series

Package Dimension (Dimensions in mm)

Standard DIP Type

Option M Type

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DATASHEET 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER 4N2X Series 4N3X Series H11AX Series

Option S Type

Option S1 Type

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DATASHEET 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER 4N2X Series 4N3X Series H11AX Series

Recommended pad layout for surface mount leadform

Device Marking

Notes

EL denotes Everlight 4N35 denotes Device Number Y denotes 1 digit Year code WW denotes 2 digit Week code V denotes VDE (optional)

YW

EL

4N35

W V

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DATASHEET 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER 4N2X Series 4N3X Series H11AX Series

Tape & Reel Packing Specifications

Option TA Option TB

Tape dimensions

Direction of feed from reel Direction of feed from reel

Dimension No.

Dimension (mm)

Dimension No.

Dimension (mm)

A B Do D1 E F

10.4±0.1 7.5±0.1 1.5±0.1 1.5+0.1/-0 1.75±0.1 7.5±0.1

Po P1 P2 t W K

4.0±0.15 12±0.1 2.0±0.1 0.35±0.03 16.0±0.2 4.5±0.1

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DATASHEET

A

r

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER 4N2X Series 4N3X Series H11AX Series

Precautions for Use

1. Soldering Condition

1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow Profile

Note: Reference: IPC/JEDEC J-STD-020D

Preheat

Temperature min (T Temperature max (T Time (T

verage ramp-up rate (T

Othe

Liquidus Temperature (TL) 217 °C Time above Liquidus Temperature (t Peak Temperature (T Time within 5 °C of Actual Peak Temperature: T Ramp- Down Rate from Peak Temperature 6°C /second max. Time 25°C to peak temperature 8 minutes max.

Reflow times 3 times

.

to T

smin

smax

) 150 °C

smin

) 200°C

smax

) (ts) 60-120 seconds

to Tp) 3 °C/second max

smax

L)

) 260°C

P

- 5°C 30 s

P

60-100 sec

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DATASHEET 6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER 4N2X Series 4N3X Series H11AX Series

DISCLAIMER

1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification.

2. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.

3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.

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