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Optocoupler with Photodarlington Output
Description
The 4N32 and 4N33 consist of a photodarlington optically coupled to a gallium arsenide infrared-emitting
diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety requirements.
Applications
95 10532
Galvanically separated circuits, non-interacting
switches
4N32/ 4N33
Vishay Telefunken
Features
D
High isolation resistance
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
Low coupling capacity typical 0.3 pF
D
High Current Transfer Ratio (CTR)
D
Low temperature coefficient of CTR
D
Coupling System A
Order Instruction
Ordering Code CTR Ranking Remarks
4N32 > 500%
4N33 > 500%
BCE
6
123
A (+) C (–) nc
4
5
95 10806
Rev. A4, 11–Jan–99 1 (7)
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4N32/ 4N33
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector base voltage V
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Peak collector current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
≤ 25°C P
amb
R
F
FSM
V
CBO
CEO
ECO
C
CM
V
6 V
60 mA
3 A
100 mW
j
125
°
C
50 V
30 V
5 V
150 mA
200 mA
150 mW
j
125
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit
Isolation test voltage (RMS) t = 1 min V
Total power dissipation T
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T
≤ 25°C P
amb
IO
tot
amb
stg
sd
3.75 kV
250 mW
–55 to +100
–55 to +125
260
°
C
°
C
°
C
Rev. A4, 11–Jan–992 (7)
Page 3
4N32/ 4N33
Vishay Telefunken
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
Junction capacitance VR = 0, f = 1 MHz C
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector base voltage IC = 100 mA V
Collector emitter voltage IC = 1mA V
Emitter collector voltage IC = 100 mA V
Collector dark current VCE = 10 V, IF = 0, E = 0 I
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Isolation test voltage
(RMS)
Isolation resistance VIO = 1000 V,
Collector emitter
saturation voltage
Cut-off frequency IF = 2 mA, VCE = 10 V,
Coupling capacitance f = 1 MHz C
1)
Related to standard climate23/50 DIN 50014
f = 50 Hz, t = 2 s V
40% relative humidity
IF = 8 mA, IC = 2 mA V
RL = 100
W
R
F
j
CBO
CEO
ECO
CEO
1)
IO
1)
IO
CEsat
f
c
k
1.25 1.5 V
50 pF
50 V
30 V
5 V
100 nA
3.75 kV
12
10
W
1 V
30 kHz
0.3 pF
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
Rev. A4, 11–Jan–99 3 (7)
VCE = 10 V, IF = 10 mA,
tp/T = 0.01, tp = 0.3 ms
4N32, 4N33 CTR 5
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4N32/ 4N33
S C L
(g)
Vishay Telefunken
Switching Characteristics
Parameter Test Conditions Symbol Typ. Unit
Turn-on time VS = 10 V, IC = 50 mA, RL = 100 W (see figure 1) t
Turn-off time
I
F
on
t
off
50
40
m
m
96 11698
s
s
+ 10 V
0
RG = 50
t
p
+
T
= 1 ms
t
p
14942
I
0.01
I
F
F
W
50
W
100
W
IC = 50 mA ;
Adjusted trough
input amplitude
Channel II
Channel I
Figure 1. Test circuit, non-saturated operation
Typical Characteristics (T
0
t
p
I
C
100%
90%
Oscilloscope
R
≥ 1 M
W
L
≤ 20 pF
C
L
10%
0
t
r
t
d
t
on
t
p
t
d
t
r
t
(= td + tr) turn-on time
on
pulse duration
delay time
rise time
Figure 2. Switching times
= 25_C, unless otherwise specified)
amb
t
t
s
f
t
off
t
s
t
f
t
(= ts + tf) turn-off time
off
storage time
fall time
t
t
400
300
Coupled Device
200
Phototransistor
100
tot
P – Total Power Dissipation ( mW )
95 10977
IR–Diode
0
0 30 60 90 120
T
– Ambient Temperature ( °C )
amb
Figure 3. Total Power Dissipation vs.
Ambient Temperature
150
1000.0
100.0
10.0
1.0
F
I – Forward Current ( mA )
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )96 11862
Figure 4. Forward Current vs. Forward Voltage
Rev. A4, 11–Jan–994 (7)
Page 5
4N32/ 4N33
)
Vishay Telefunken
1.5
VCE=10V
1.4
I
=1mA
F
1.3
1.2
1.1
1.0
0.9
0.8
0.7
rel
0.6
CTR – Relative Current Transfer Ratio
0.5
–30 –20 –10 0 10 20 30 40 50 60 70 80
T
– Ambient Temperature ( °C )96 11906
amb
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
10000
VCE=10V
I
=0
1000
100
with open Base ( nA )
CEO
I – Collector Dark Current,
F
10
1000
VCE=10V
100
10
1
C
I – Collector Current ( mA )
0.1
0.1 1 10
95 10981
IF – Forward Current ( mA )
Figure 8. Collector Current vs. Forward Current
100
IF=10mA
10
1
C
I – Collector Current ( mA )
5mA
2mA
1mA
0.5mA
100
1
0255075
T
95 10979
– Ambient Temperature ( °C )
amb
Figure 6. Collector Dark Current vs.
100
Figure 9. Collector Current vs. Collector Emitter Voltage
95 10982
0.1
0.1 1 10
V
– Collector Emitter Voltage ( V )
CE
100
Ambient Temperature
1
VCB=10V
0.1
0.01
CB
I – Collector Base Current ( mA )
0.001
95 10980
110
IF – Forward Current ( mA )
100
Figure 7. Collector Base Current vs. Forward Current
1.0
0.9
200%
100%
CTR=50%
110
IC – Collector Current ( mA )
100
CEsat
V – Collector Emitter Saturation Voltage ( V
95 10983
0.8
0.7
0.6
0.5
Figure 10. Collector Emitter Saturation Voltage vs.
Collector Current
Rev. A4, 11–Jan–99 5 (7)
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4N32/ 4N33
Vishay Telefunken
10000
1000
100
10
CTR – Current Transfer Ratio ( % )
1
0.1 1 10
95 10984
IF – Forward Current ( mA )
VCE=10V
100
Figure 11. Current Transfer Ratio vs. Forward Current
Dimensions of 4N32/ 4N33 in mm
Date
Code
(YM)
Type
XXXXXX
918 A TK 63
V
DE
Coupling
System
Indicator
Figure 12. Marking example
0884
Company
Logo
Production
Location
Safety
Logo
15090
weight: 0.50 g
creepage distance:y 6 mm
air path:
after mounting on PC board
y
6 mm
Rev. A4, 11–Jan–996 (7)
14770
Page 7
4N32/ 4N33
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use V ishay Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly , any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Rev. A4, 11–Jan–99 7 (7)
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