EtronTech EM564166 User Manual

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EtronTech

EM564166

Features

Single power supply voltage of 2.3V to 3.6V

•

Power down features using CE#

•

Low power dissipation

•

Data retention supply voltage: 1.0V to 3.6V

•

Direct TTL compatibility for all input and output

•
Wide operating temperature range: -40°C to 85°C

•

Standby current @ VDD = 3.6 V

•

EM564166BC-70/85
EM564166BC-70E/85E

I
Typical Maximum

1 µA 10 µA
5 µA 80 µA

DDS2

256K x 16 Low Power SRAM

Preliminary, Rev 1.0 05/2001

Pin Configuration

48-Ball BGA (CSP), Top View

1 2 3 4 5 6

A

LB# OE# A0 A1 A2 NC

B

DQ8 UB# A3 A4 CE# DQ0

C

DQ9 DQ10 A5 A6 DQ1 DQ2

D

GND DQ11 A17 A7 DQ3 VDD

E

VDD DQ12 NC A16 DQ4 GND

F

DQ14 DQ13 A14 A15 DQ5 DQ6

G

DQ15 NC A12 A13 WE# DQ7

H

Ordering Information

Part Number Speed I

EM564166BC-70 70 ns
EM564166BC-85 85 ns
EM564166BC-70E 70 ns
EM564166BC-85E 85 ns

Overview

Package

DDS2

10 µA
10 µA
80 µA
80 µA

6x8 BGA
6x8 BGA
6x8 BGA
6x8 BGA

Pin Description

Symbol Function

A0 - A17 Address Inputs
DQ0 - DQ15 Data Inputs / Outputs
CE# Chip Enable Inputs
OE# Output Enable
WE# Read / Write Control Input
LB#, UB# Data Byte Control Inputs
GND Ground
V

DD

NC No Connection

NC A8 A9 A10 A11 NC

Power Supply

The EM564166 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced
CMOS technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit
technology provides both high speed and low power. It is automatically placed in low-power mode when chip
enable (CE#) is asserted high. There are two control inputs. CE# are used to select the device and for data
retention control, and output enable (OE#) provides fast memory access. Data byte control pin (LB#,UB#)
provides lower and upper byte access. This device is well suited to various microprocessor system applications
where high speed, low power and battery backup are required. And, with a guaranteed operating range from ­40°C to 85°C, the EM564166 can be used in environments exhibiting extreme temperature conditions.

Etron Technology, Inc.

No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: [phone] FAX: [phone]

Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.

EtronTech

Block Diagram

EM564166

DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7

DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15

A0

A17

MEMORY

CELL ARRAY

2,048X128X16

(4,194,304)

SENSE AMP

COLUMN ADDRESS
DECODE R

VDD

GND

WE#
UB#

LB#

OE#

CE#

Preliminary

POWER DOWN
CIRCUIT

2 Rev 1.0

May 2001

EtronTech

+0.5V

Operating Mode

Mode CE# OE# WE# LB# UB# DQ0~DQ7 DQ8~DQ15

EM564166

Read L L H

Write L X L

L H H X X

Output Deselect

Standby

L X X H H
H X X X X
X X X X X

L L D

H L High-Z D

L H D
L L DIN DIN

H L High-Z DIN

L H DIN High-Z

Note: X = don't care. H=logic high. L=logic low.

Absolute Maximum Ratings

D

OUT

High-Z

OUT

High-Z High-Z

High-Z High-Z

OUT
OUT

Supply voltage, VDD -0.3 to +4.6V
Input voltages, VIN -0.3 to +4.6V

Input and output voltages, V
Operating temperature, T

Storage temperature, T
Soldering Temperature (10s), T
Power dissipation, PD 0.6 W

STRG

I/O

OPR

SOLDER

-0.5 to VDD

-40 to +85°C

-55 to +150°C
240°C

DC Recommended Operating Conditions (Ta=-40°C to 85°C)

Symbol Parameter Min Typ Max Unit

VDD Power Supply Voltage 2.3

VIH Input High Voltage 2.2

VIL Input Low Voltage -0.3

VDR Data Retention Supply Voltage 1.0

Note:
(1) Overshoot : VDD +2.0V in case of pulse width ≤ 20ns
(2) Undershoot : -2.0V in case of pulse width ≤ 20ns

(2)

−

−

−

−

3.6 V

V

DD

(1)

+ 0.3

0.6 V

3.6 V

V

Preliminary

3 Rev 1.0

May 2001

EtronTech

DC Characteristics (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)

EM564166

Parameter Symbol

Input low current
Output low

voltage
Output high

voltage

Operating current

I

Standby current I

Notes:

* Typical value are measured at Ta = 25°C.

-70E/85E

IIL I

VOL I

VOH I

I

DD1

I

DD2

DDS1

DDS2

Test Conditions Min Typ* Max Unit

= 0V to VDD - 1

IN

= 2.1 mA -

OL

= -1.0 mA

OH

V

= 3.6 V

DD

CE# = V
I

OUT

Other Input = V

CE# = V

CE# ≥ VDD - 0.2V

and

IL

= 0mA

IH

IH

/ V

Cycle time

IL

V

V

V
V
V
V

DD

DD

DD
DD
DD
DD

= min

Cycle time = 1µs

-70/85

= 2.7 V

= 2.3 V

= 3.6 V
= 2.7 V
= 2.3 V
= 3.6 V

VDD -

0.15

−

−

−

− −

− −

−

−

−

−

−

0.4 V

−

− −

15 25

10 15

7 12

0.5 mA

1 10

0.8

0.5
5 80

1

5

5
3

µA

V

mA

µA

Capacitance (Ta = 25°C; f = 1 MHz)

Parameter Symbol Min Typ Max Unit Test Conditions

Input capacitance CIN
Output capacitance C

Notes:

This parameter is periodically sampled and is not 100% tested.

OUT

− −

− −

10 pF VIN = GND
10 pF V

OUT

= GND

Preliminary

4 Rev 1.0

May 2001