ETRON EM564161BC-85, EM564161BC-70, EM564161BA-85E, EM564161BA-85, EM564161BA-70E Datasheet

EtronTech

EM564161

256K x 16 Low Power SRAM

Preliminary, Rev 2.6 10/2000

Features

• Single power supply voltage of 2.3V to 3.6V

• Power down features using CE1# and CE2

• Low power dissipation

• Data retention supply voltage: 1.0V to 3.6V

• Direct TTL compatibility for all input and output

• Wide operating temperature range: -40°C to 85°C

• Standby current @ VDD = 3.6 V

I

DDS2

Typical Maximum
EM564161BA/BC-70/85
EM564161BA-70E/85E

1 µA 10 µA
5 µA 80 µA

Ordering Information

Part Number Speed I

EM564161BC-70 70 ns
EM564161BA-70 70 ns
EM564161BA-70E 70 ns
EM564161BC-85 85 ns
EM564161BA-85 85 ns
EM564161BA-85E 85 ns

DDS2

10 µA
10 µA
80 µA
10 µA
10 µA
80 µA

Package

6x8 BGA
8x10 BGA
8x10 BGA
6x8 BGA
8x10 BGA
8x10 BGA

Pin Configuration

48-Ball BGA (CSP), Top View

1 2 3 4 5 6

A

LB# OE# A0 A1 A 2 CE 2

B

DQ8 U B # A3 A4 CE 1 # DQ 0

C

DQ9 DQ10 A5 A6 DQ1 DQ2

D

GND D Q 1 1 A 17 A7 DQ 3 VDD

E

VDD DQ12 NC A1 6 DQ4 G ND

F

DQ1 4 DQ1 3 A14 A15 DQ5 DQ 6

G

DQ1 5 NC A12 A 13 W E# DQ7

H

NC A8 A9 A10 A11 NC

Pin Description

Symbol Function

A0 - A17 Address Inputs
DQ0 - DQ15 Data Inputs / Outputs
CE1#, CE2 Chip Enable Inputs
OE# Output Enable
WE# Read / Write Control Input
LB#, UB# Data Byte Control Inputs
GND Ground
V

DD

NC No Connection

Power Supply

Overview

The EM564161 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced
CMOS technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit
technology provides both high speed and low power. It is automatically placed in low-power mode when chip
enable (CE1#) is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are
used to select the device and for data retention control, and output enable (OE#) provides fast memory access.
Data byte control pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various
microprocessor system applications where high speed, low power and battery backup are required. And, with a
guaranteed operating range from -40°C to 85°C, the EM564161 can be used in environments exhibiting
extreme temperature conditions.

Etron Technology, Inc.

No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: [phone] FAX: [phone]

Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.

EtronTech

Block Diagram

EM564161

DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7

DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15

A0

A17

MEMORY

CELL ARRAY

2,048X128X16

(4,194,304)

SENSE AMP

COLUMN ADDRESS
DECODE R

VDD

GND

WE#
UB#

LB#

OE#
CE1#
CE2

Preliminary

POWER DOWN
CIRCUIT

2 Rev 2.6

October 2000

EtronTech

Operating Mode

Mode CE1# CE2 OE# WE# LB# UB# DQ0~DQ7 DQ8~DQ15

EM564161

L L D

Read L H L H

Write L H X L

L H H H X X

Output Deselect

L H X X H H

H X X X X X

Standby

X L X X X X

H L High-Z D

L H D
L L D

H L High-Z D

L H D

Note: X = don't care. H=logic high. L=logic low.

Absolute Maximum Ratings

OUT

OUT

IN

IN

High-Z High-Z

High-Z High-Z

D

OUT
OUT

High-Z

D

IN
IN

High-Z

Supply voltage, V
Input voltages, V

Input and output voltages, V
Operating temperature, T

Storage temperature, T
Soldering Temperature (10s), T
Power dissipation, P

DD

IN

I/O

OPR

STRG

D

SOLDER

-0.3 to +4.6V

-0.3 to +4.6V

-0.5 to V

-40 to +85°C

-55 to +150°C

DD

+0.5V

260°C

0.6 W

DC Recommended Operating Conditions (Ta=-40°C to 85°C)

Symbol Parameter Min Typ Max Unit

V

DD

V

IH

V

IL

V

DR
Note:
(1) Overshoot : VDD +2.0V in case of pulse width ≤ 20ns
(2) Undershoot : -2.0V in case of pulse width ≤ 20ns

Power Supply Voltage 2.3

Input High Voltage 2.2

Input Low Voltage -0.3

Data Retention Supply Voltage 1.0

(2)

−

−

−

−

3.6 V

V

+ 0.3

DD

0.6 V

3.6 V

(1)

V

Preliminary

3 Rev 2.6

October 2000

EtronTech

EM564161

DC Characteristics (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)

Parameter Symbol Test Conditions Min Typ* Max Unit

Input low current I
Output low

voltage
Output high

voltage

Operating current

Standby current

Notes:

* Typical value are measured at Ta = 25°C.
** In standby mode with CE1# ≥ VDD - 0.2V, these limits are assured for the condition
CE2 ≥ V

- 0.2V or CE2 ≤ 0.2V.

DD

V

V

DD1

I

DD2

I

DDS1

I

DDS2

(Note)

IL

OL

OH

I

= 0V to V

IN

I

= 2.1 mA -

OL

I

= -1.0 mA

OH

CE1# = V
CE2 = V
I

OUT

Other Input = V

CE1# = V

CE1# = V

**

CE2 = 0.2V

IL

IH

= 0mA

IH

DD

DD

and

and

/ V

IH

or CE2 = V

– 0.2V or

Cycle time

IL

IL

-70/85

-70E/85E V

V

DD

V

V

V
V
V

DD

DD

DD
DD
DD
DD

= min

Cycle time = 1µs

= 3.6 V

= 2.7 V

= 2.3 V

= 3.6 V
= 2.7 V
= 2.3 V
= 3.6 V

- 1

VDD -

0.15

−

−

−

− −

− −

−

−

−

−

−

0.4 V

−

− −

15 25

10 15I

7 12

0.5 mA

1 10

0.8

0.5
5 80

1

µA

V

mA

5

5

µA

3

Capacitance (Ta = 25°C; f = 1 MHz)

Parameter Symbol Min Typ Max Unit Test Conditions

Input capacitance C
Output capacitance C

Notes:

This parameter is periodically sampled and is not 100% tested.

Preliminary

IN

OUT

− −

− −

10 pF VIN = GND
10 pF V

OUT

= GND

4 Rev 2.6

October 2000