ESP32 has five strapping pins, which can be seen in Chapter 6 Schematics:
• MTDI
• GPIO0
• GPIO2
• MTDO
• GPIO5
Software can read the values of these five bits from register ”GPIO_STRAPPING”.
During the chip’s system reset (power-on-reset, RTC watchdog reset and brownout reset), the latches of the
strapping pins sample the voltage level as strapping bits of ”0” or ”1”, and hold these bits until the chip is powered
down or shut down. The strapping bits configure the device’s boot mode, the operating voltage of VDD_SDIO and
other initial system settings.
Each strapping pin is connected to its internal pull-up/pull-down during the chip reset. Consequently, if a strapping
pin is unconnected or the connected external circuit is high-impedance, the internal weak pull-up/pull-down will
determine the default input level of the strapping pins.
To change the strapping bit values, users can apply the external pull-down/pull-up resistances, or use the host
MCU’s GPIOs to control the voltage level of these pins when powering on ESP32.
After reset, the strapping pins work as normal-function pins.
Refer to Table 4 for a detailed boot-mode configuration by strapping pins.
Table 4: Strapping Pins
Voltage of Internal LDO (VDD_SDIO)
PinDefault3.3V1.8V
MTDIPull-down01
Booting Mode
PinDefaultSPI BootDownload Boot
GPIO0Pull-up10
GPIO2Pull-downDon’t-care0
Enabling/Disabling Debugging Log Print over U0TXD During Booting
PinDefaultU0TXD TogglingU0TXD Silent
MTDOPull-up10
Espressif Systems5ESP32-WROVER-B Datasheet V1.0
2. PIN DEFINITIONS
Timing of SDIO Slave
PinDefault
Falling-edgeInput
Falling-edge Output
Falling-edgeInput
Rising-edge Output
Rising-edgeInput
Falling-edge Output
Rising-edgeInput
Rising-edge Output
MTDOPull-up0011
GPIO5Pull-up0101
Note:
• Firmware can configure register bits to change the settings of ”Voltage of Internal LDO (VDD_SDIO)” and ”Timing
of SDIO Slave” after booting.
• Internal pull-up resistor for MTDI is not populated in the module, as the flash and SRAM in ESP32-WROVER-
B/ESP32-WROVER-IB only support a power voltage of 3.3V (output by VDD_SDIO).
Espressif Systems6ESP32-WROVER-B Datasheet V1.0
3. FUNCTIONAL DESCRIPTION
3.Functional Description
This chapter describes the modules and functions integrated in ESP32-WROVER-B/ESP32-WROVER-IB.
3.1CPU and Internal Memory
ESP32-D0WD contains two low-power Xtensa®32-bit LX6 microprocessors. The internal memory includes:
• 448 kB of ROM for booting and core functions.
• 520 kB of on-chip SRAM for data and instructions.
• 8 kB of SRAM in RTC, which is called RTC FAST Memory and can be used for data storage; it is accessed
by the main CPU during RTC Boot from the Deep-sleep mode.
• 8 kB of SRAM in RTC, which is called RTC SLOW Memory and can be accessed by the co-processor during
the Deep-sleep mode.
• 1 kbit of eFuse: 256 bits are used for the system (MAC address and chip configuration) and the remaining
768 bits are reserved for customer applications, including Flash-Encryption and Chip-ID.
3.2External Flash and SRAM
ESP32 supports multiple external QSPI flash and SRAM chips. More details can be found in Chapter SPI in the
ESP32 Technical Reference Manual. ESP32 also supports hardware encryption/decryption based on AES to pro-
tect developers’ programs and data in flash.
ESP32 can access the external QSPI flash and SRAM through high-speed caches.
• Up to 16 MB of external flash can be mapped into CPU instruction memory space and read-only memory
space simultaneously.
– When external flash is mapped into CPU instruction memory space, up to 11 MB+248 KB can be
mapped at a time. Note that if more than 3 MB+248 KB are mapped, cache performance will be
reduced due to speculative reads by the CPU.
– When external flash is mapped into read-only data memory space, up to 4 MB can be mapped at a
time. 8-bit, 16-bit and 32-bit reads are supported.
• External SRAM can be mapped into CPU data memory space. SRAM up to 8 MB is supported and up to 4
MB can be mapped at a time. 8-bit, 16-bit and 32-bit reads and writes are supported.
ESP32-WROVER-B/ESP32-WROVER-IB integrates 4 MB of external SPI flash. The 4-MB SPI flash can be memory-
mapped onto the CPU code space, supporting 8, 16 and 32-bit access. Code execution is supported.
In addition to the 4 MB SPI flash, ESP32-WROVER-B/ESP32-WROVER-IB also integrates 8 MB PSRAM for more
memory space.
3.3Crystal Oscillators
The module uses a 40-MHz crystal oscillator.
Espressif Systems7ESP32-WROVER-B Datasheet V1.0
3. FUNCTIONAL DESCRIPTION
3.4RTC and Low-Power Management
With the use of advanced power-management technologies, ESP32 can switch between different power modes.
• Power modes
– Active mode: The chip radio is powered on. The chip can receive, transmit, or listen.
– Modem-sleep mode: The CPU is operational and the clock is configurable. The Wi-Fi/Bluetooth base-
band and radio are disabled.
– Light-sleep mode: The CPU is paused. The RTC memory and RTC peripherals, as well as the ULP
co-processor are running. Any wake-up events (MAC, host, RTC timer, or external interrupts) will wake
up the chip.
– Deep-sleep mode: Only RTC memory and RTC peripherals are powered on. Wi-Fi and Bluetooth
connection data are stored in the RTC memory. The ULP co-processor is functional.
– Hibernation mode: The internal 8-MHz oscillator and ULP co-processor are disabled. The RTC recovery
memory is powered down. Only one RTC timer on the slow clock and certain RTC GPIOs are active.
The RTC timer or the RTC GPIOs can wake up the chip from the Hibernation mode.
The power consumption varies with different power modes and work statuses of functional modules. Please see
Table 5 for details.
Table 5: Power Consumption by Power Modes
Power modeDescriptionPower consumption
Wi-Fi Tx packet
Active (RF working)
Please refer to ESP32 Datasheet.Wi-Fi / BT Tx packet
Wi-Fi / BT Rx and listening
Max speed 240 MHz: 30 mA ~ 50 mA
Modem-sleepThe CPU is powered on.
Normal speed 80 MHz: 20 mA ~ 25 mA
Slow speed 2 MHz: 2 mA ~ 4 mA
Light-sleep-0.8 mA
The ULP co-processor is powered on.150 µA
Deep-sleep
ULP sensor-monitored pattern100 µA @1% duty
RTC timer + RTC memory10 µA
HibernationRTC timer only5 µA
Power offCHIP_PU is set to low level, the chip is powered off0.1 µA
Note:
• When Wi-Fi is enabled, the chip switches between Active and Modem-sleep mode. Therefore, power consumption
changes accordingly.
• In Modem-sleep mode, the CPU frequency changes automatically. The frequency depends on the CPU load and
the peripherals used.
• During Deep-sleep, when the ULP co-processor is powered on, peripherals such as GPIO and I2C are able to
operate.
• When the system works in the ULP sensor-monitored pattern, the ULP co-processor works with the ULP sensor
periodically; ADC works with a duty cycle of 1%, so the power consumption is 100 µA.
Espressif Systems8ESP32-WROVER-B Datasheet V1.0
4. PERIPHERALS AND SENSORS
4.Peripherals and Sensors
Please refer to Section 4 Peripherals and Sensors in ESP32 Datasheet.
Note:
External connections can be made to any GPIO except for GPIOs in the range 6-11, 16, or 17. GPIOs 6-11 are connected
to the module’s integrated SPI flash and PSRAM. GPIOs 16 and 17 are connected to the module’s integrated PSRAM.
For details, please see Section 6 Schematics.
Espressif Systems9ESP32-WROVER-B Datasheet V1.0
5. ELECTRICAL CHARACTERISTICS
5.Electrical Characteristics
5.1Absolute Maximum Ratings
Stresses beyond the absolute maximum ratings listed in the table below may cause permanent damage to the
device. These are stress ratings only, and do not refer to the functional operation of the device.
Table 6: Absolute Maximum Ratings
SymbolParameterMinMaxUnit
VDD33-–0.33.6V
T
store
5.2Recommended Operating Conditions
Storage temperature–40150°C
Table 7: Recommended Operating Conditions
SymbolParameterMinTypicalMaxUnit
VDD33-2.73.33.6V
I
V DD
Current delivered by external power supply0.5--A
TOperating temperature–40-85°C
5.3DC Characteristics (3.3V, 25°C)
Table 8: DC Characteristics
SymbolParameterMinTypMaxUnit
C
IN
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
I
OH
I
OL
R
P U
R
P D
V
IL_nRS T
Pin capacitance-2-pF
High-level input voltage0.75 × VDD1-VDD + 0.3V
Low-level input voltage–0.3-0.25 × VDDV
High-level input current--50nA
Low-level input current--50nA
High-level output voltage0.8 × VDD--V
Low-level output voltage--0.1 × VDDV
High-level source current (VDD = 3.3V, VOH=
2.64V, PAD_DRIVER = 3)
Low-level sink current (VDD = 3.3V, VOH=
0.495V, PAD_DRIVER = 3)
-40-mA
-28-mA
Pull-up resistor-45-k�
Pull-down resistor-45-k�
Low-level input voltage of EN to reset the mod-
ule
-0.6-V
1. VDD is the I/O voltage for a particular power domain of pins. More details can be found in Appendix IO_MUX of
ESP32 Datasheet.
Espressif Systems10ESP32-WROVER-B Datasheet V1.0
5. ELECTRICAL CHARACTERISTICS
5.4Wi-Fi Radio
Table 9: Wi-Fi Radio Characteristics
DescriptionMinTypicalMaxUnit
Input frequency2412-2462MHz
Output impedance*-*-Ω
Tx power
Output power of PA for 11b mode2223
Sensitivity
DSSS, 1 Mbps-–98-dBm
CCK, 11 Mbps-–91-dBm
OFDM, 6 Mbps-–93-dBm
OFDM, 54 Mbps-–75-dBm
HT20, MCS0-–93-dBm
HT20, MCS7-–73-dBm
HT40, MCS0-–90-dBm
HT40, MCS7-–70-dBm
MCS32-–89-dBm
Adjacent channel rejection
OFDM, 6 Mbps-37-dB
OFDM, 54 Mbps-21-dB
HT20, MCS0-37-dB
HT20, MCS7-20-dB
∗
For the module that uses an IPEX antenna, the output impedance is 50Ω.
This equipment complies with FCC radiation exposure limits set forth for an uncontrolled
environment .This equipment should be installed and operated with minimum distance 20cm between
the radiator& your body.
,6('566:DUQLQJ,6('5)([SRVXUH6WDWHPHQW
ISED RSS Warning:
This device complies with Innovation, Science and Economic Development Canada licence-exempt
RSS standard(s). Operation is subject to the following two conditions: (1) this device may not cause
interference, and (2) this device must accept any interference, including interference that may cause
undesired operation of the device.
Le présent appareil est conforme aux CNR d'ISED applicables aux appareils radio exempts de licence.
L'exploitation est autorisée aux deux conditions suivantes:
(1) l'appareil ne doit pas produire de brouillage, et
(2) l'utilisateur de l'appareil doit accepter tout brouillage radioélectrique subi, même si le brouillage
est susceptible d'en compromettre le fonctionnement.
ISED RF exposure statement:
This equipment complies with ISED radiation exposure limits set forth for an uncontrolled environment.
This equipment should be installed and operated with minimum distance 20cm between the radiator& your
body.This transmitter must not be co-located or operating in conjunction with any other antenna or transmitter.
Le rayonnement de la classe b repecte ISED fixaient un environnement non contrôlés.Installation et mise en
œuvre de ce matériel devrait avec échangeur distance minimale entre 20 cm ton corps.Lanceurs ou ne peuvent
pas coexister cette antenne ou capteurs avec d’autres.
)&&,6('/DEHO,QVWUXFWLRQV
7KHRXWVLGHRIILQDOSURGXFWVWKDWFRQWDLQVWKLVPRGXOHGHYLFHPXVWGLVSOD\DODEHOUHIHUULQJWRWKHHQFORVHG
PRGXOH7KLVH[WHULRUODEHOFDQXVHZRUGLQJVXFKDV³&RQWDLQV7UDQVPLWWHU0RGXOH
)&&,'$&=(63:529(5%,IC:21098-ESPWROVERB" or “Contains
FCC ID:2AC7Z-ESP32WROVERB,IC:21098-ESPWROVERB” Any similar wording that expresses the
same meaning may be used.
Espressif Systems16ESP32-WROVER-B Datasheet V1.0
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