Ericsson PTF10015 Datasheet

PTF 10015

y

50 Watts, 300–960 MHz

GOLDMOS

™

Field Effect Transistor

Description

The PTF 10015 is a 50 Watt LDMOS FET intended for large signal
amplifier applications from 300 to 960 MHz. It operates at 55%
efficiency and 13.0 dB of gain. Nitride surface passivation and full
gold metallization are used to ensure excellent device lifetime and
reliability.

Typical Power Out & Efficiency vs. Power In

70
60

Output Power (W)

50
40
30

Output Power

20
10

0

01234

Inp u t Po wer (Watts)

Efficiency (%)

VDD = 28 V

= 380 mA

I

DQ

f = 960 MHz

90
80
70
60
50
40
30
20

Drain Efficienc

Features

• Performance at 960 MHz, 28 Volts

- Output Power = 50 Watts

- Power Gain = 13.0 dB Typ, 12.0 dB Min

- Efficiency = 55% Typ

• Full Gold Metallization

• Silicon Nitride Passivated

• Excellent Thermal Stability

• Back Side Common Source

• 100% lot traceability

• Available in Package 20222 as PTF 10031

10015

A-1234569914

Package

20222

Package

20235

10031

A-1234569743

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction Temperature T
Total Device Dissipation P

Above 25°C derate by 1.0 W/°C
Storage Temperature Range T

Thermal Resistance (TC = 70°C) R

All published data is at T

= 25°C unless otherwise indicated.

C

DSS

GS

J
D

STG

qJC

65 Vdc
±20 Vdc
200 °C
175 Watts

-65 to +150 °C

1.0 °C/W

e

1

PTF 10015

)

)

e

Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Drain-Source Breakdown Voltage VGS = 0 V , ID = 25 mA V
Drain-Source Leakage Current VDS = 28 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 75 mA V
Forward Transconductance VDS = 10 V , ID = 3 A g

(BR)DSS

DSS

GS(th)

fs

65 — — Volts

— — 1.0 mA

3.0 — 5.0 Volts

2.0 2.8 — Siemens

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Common Source Power Gain

(V

Power Output at 1 dB Compression

(V

Drain Efficiency

(V

Load Mismatch Tolerance

(V
all phase angles at frequency of test)

= 28 V, P

DD

= 28 V, IDQ = 380 mA, f = 960 MHz) P-1dB 50 — — Watts

DD

= 28 V, P

DD

= 28 V, P

DD

= 50 W, IDQ = 380 mA, f = 960 MHz) G

OUT

= 50 W, IDQ = 380 mA, f = 960 MHz) h 50 55 — %

OUT

= 50 W, IDQ = 380 mA, f = 960 MHz— Y — — 10:1 —

OUT

ps

12.0 13.0 — dB

Typical Performance

Gain vs. Powe r Output

16

15

14

13

Gain (dB

12

11

10

VDD = 28 V

= 380 mA

I

DQ

f = 960 MHz

0 10203040506070

Power Output (Watts)

Inte rm odulati on Distortion vs. Power Output

-15

VDD = 28 V

-25

-35

= 950. 000 MHz

f

1

= 950. 100 MHz

f

2

= 380 mA

I

DQ

IMD (dB

-45

-55
0 10203040506070

Ou tp u t Po wer (Watts PEP)

3rd

5th

7th

2