Ericsson PTF10009 Datasheet

PTF 10009
85 Watts, 1.0 GHz

GOLDMOS

™

Field Effect Transistor

Description

The PTF 10009 is an 85 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 50% efficiency and

13.0 dB of gain. Nitride surface passivation and full gold metallization
are used to ensure excellent device lifetime and reliability.

Typical Output Power and Efficiency vs. Input Power

100

90
80
70
60
50
40
30

Output Power

20
10

0

0.0 1.0 2.0 3.0 4.0 5.0

Outpu t Power (W)

VDS = 28 V
I

= 600 mA Total

DQ

f = 960 MHz

Input Power (Watts)

Efficiency (%)

80
72
64
56
48
40
32
24
16
8
0

Efficiency

• Performance at 960 MHz, 28 Volts

- Output Power = 85 Watts

- Power Gain = 13.0 dB Typ

- Efficiency = 50% T yp

• Full Gold Metallization

• Silicon Nitride Passivated

• Excellent Thermal Stability

• 100% lot traceability

10009

1234569744

Package 20230

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature T
Total Device Dissipation P

Above 25°C derate by 1.54 W/°C
Storage Temperature Range T

Thermal Resistance (T

(1)

per side

All published data at T

(1)

(1)

= 70°C) R

CASE

= 25°C unless otherwise indicated.

CASE

V

DSS

V

STG

GS

J
D

qJC

65 Vdc
±20 Vdc
200 °C
27 0 Watts

-65 to 150 °C

0.65 °C/W

e

1

PTF 10009

e

Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side)

Characteristic (per side) Conditions Symbol Min Typ Max Units

Drain-Source Breakdown Voltage VGS = 0 V , ID = 25 mA V
Drain-Source Leakage Current VDS = 28 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 75 mA V
Forward Transconductance VDS = 10 V , ID = 3 A g

(BR)DSS

DSS

GS(th)

fs

65 — — Volts

— — 1.0 mA

3.0 — 5.0 Volts
— 2.8 — Siemens

Dynamic Characteristics

Characteristic (per side) Symbol Min Typ Max Units

Input Capacitance

(V

Output Capacitance

(V

Reverse Transfer Capacitance

(V

= 28 V, VGS = 0 V, f = 1 MHz) C

DS

= 28 V, VGS = 0 V, f = 1 MHz) C

DS

= 28 V, VGS = 0 V, f = 1 MHz) C

DS

iss

oss

rss

—90—pF

—36—pF

— 1.9 — pF

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V

Drain Efficiency

(V

Load Mismatch Tolerance

(V
all phase angles at frequency of test)

= 28 V, P

DD

= 28 V, P

DD

= 28 V, P

DD

= 85 W, IDQ = 600 mA, f = 960 MHz) G

out

= 85 W, IDQ = 600 mA, f = 960 MHz) h 47 50 — %

out

= 85 W, IDQ = 600 mA, f = 960 MHz— Y — — 5:1 —

out

ps

12.0 13.0 — dB

Impedance Data (data shown for fixed-tuned broadband circuit)

(VDD = 28 V, P

Frequency Z Source W Z Load W

MHz R jX R jX

860 1.76 -0.78 5.00 -1.50
900 1.80 -0.05 4.80 -0.78
960 1.58 0.69 4.24 0.36
1000 1.39 1.35 3.95 1.41

= 85 W, IDQ = 600 mA)

out

Z Source Z Load

G
G

2

D

S

D

Z0 = 50 W