Ericsson PTF10007 Datasheet
PTF 10007
T
35 Watts, 1.0 GHz
GOLDMOS® Field Effect Transistor
Description
The PTF 10007 is a 35 Watt GOLDMOS FET intended for large
signal amplifier applications to 1.0 GHz. It operates at 55% efficiency
and 13.5 dB of gain. Nitride surface passivation and gold
metallization ensure excellent device lifetime and reliability.
ypi cal Ou tpu t Pow er & Efficiency
vs. Input Powe r
50
40
30
Output Power (W)
Efficiency (%)
100
80
60
• Performance at 960 MHz, 28 Volts
- Output Power = 35 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 55% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• 100% lot traceability
• Available in Package 20235 as PTF 10052
10007
A-1234569723
Package
20222
20
Output Power
10
0
0123
Input Power (Watts)
VDD = 28 V
= 300 mA
I
DQ
f = 960 MHz
40
20
0
Efficiency
Package
20235
10052
A-1234569999
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction T emperature T
T otal Device Dissipation at T
Above 25°C derate by 0.7 W/°C
Storage T emperature Range T
Thermal Resistance (T
flange
= 25°C P
flange
= 70°C) R
DSS
GS
J
D
STG
qJC
60 Vdc
±20 Vdc
200 °C
120 Watts
–40 to +150 °C
1.4 °C/W
e
1
PTF 10007
G
e
Electrical Characteristics (100% T ested)
Characteristic Conditions Symbol Min T yp Max Units
Drain-Source Breakdown Voltage VGS = 0 V , ID = 5 mA V
Drain-Source Leakage Current VDS = 28 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V , ID = 75 mA V
Forward Transconductance VDS = 10 V , ID = 3 A g
(BR)DSS
DSS
GS(th)
fs
65 70 — Volts
——1.0 mA
3.0 — 5.0 Volts
— 2.8 — Siemens
RF Specifications (100% T ested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
all phase angles at frequency of test)
= 28 V , P
DD
= 28 V , IDQ = 300 mA, f = 960 MHz) P-1dB 35 ——Watts
DD
= 28 V , P
DD
= 28 V , P
DD
= 35 W, IDQ = 300 mA, f = 960 MHz) G
OUT
= 35 W, IDQ = 300 mA, f = 960 MHz) h 50 55 — %
OUT
= 35 W, IDQ = 300 mA, f = 960 MHz— Y ——10:1 —
OUT
ps
12.0 13.5 — dB
Typical Performance
P
, Gain & Efficiency
OUT
30
25
20
15
Gain
10
5
0
400 500 600 700 800 900 1000
ain (dB )
VDD = 28 V
I
= 300 mA
DQ
(at P-1dB)
Effici ency (%)
Output Powe r (W)
Frequency (MHz)
vs. Frequency
70
60
50
40
30
20
Output Power & Efficiency
Broadba nd Test Fixture Per formance
20
Effici ency (%)
16
Gain (dB)
12
Gain
8
4
925 930 935 940 945 950 955 960
VDD = 28 V
I
= 300 mA
DQ
P
= 35 W
OUT
Retu rn Loss (dB)
Frequency (MHz)
60
50
40
- 5
30
-15
20
10
-25
0
-35
Efficiency
Return Loss
2
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