Ericsson PTB20264 Datasheet
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Description
PTB 20264
10 Watts, 1.8–1.9 GHz
Cellular Radio RF Power Transistor
The 20264 is an NPN, common emitter RF power transistor intended
for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
Typical Output Pow er and Efficiency vs. Input Power
12
10
8
6
4
2
Output Power (Watts)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Input Power (Watts)
Output Powe
Efficiency
VCC = 26 V
I
= 50 mA
CQ
f = 1845 MHz
80
60
40
Efficiency (%)
20
0
26 Volt, 1.845 GHz Characteristics
- Output Power = 10 Watts
- Gain = 9.4 dB Typ at 5 Watts
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
20264
LOT CODE
Package 20243
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage, RBE = 10 Ω V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 0.173 W/°C
Storage Temperature Range T
Thermal Resistance (T
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
50 Vdc
50 Vdc
4.0 Vdc
2.0 Adc
30 Watts
–40 to +150 °C
5.8 °C/W
PTB 20264
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 10 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 10 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 250 mA h
(BR)CEO
(BR)CES
(BR)EBO
FE
22 26 — Volts
55 60 — Volts
3.5 5 — Volts
20 50 120 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain at P
(V
CC
1880 MHz)
Gain Compression at P
(V
CC
1880 MHz)
Gain at P
(V
CC
Gain Compression at P
(V
CC
Collector Efficiency at P
(V
CC
Load Mismatch Tolerance
(V
CC
f = 1845 MHz—all phase angles at frequency of test)
= 5 Watts
OUT
= 26 Vdc, ICQ = 50 mA, f = 1805 MHz, 1845 MHz, G
= 5 Watts
OUT
= 26 Vdc, ICQ = 50 mA, f = 1805 MHz, 1845 MHz, — — — 0.2 dB
= 10 Watts
OUT
= 26 Vdc, ICQ = 50 mA, f = 1845 MHz) G
= 10 Watts
OUT
= 26 Vdc, ICQ = 50 mA, f = 1845 MHz) — — — 0.8 dB
= 10 Watts
OUT
= 26 Vdc, ICQ = 50 mA, f = 1845 MHz) η
= 26 Vdc, P
= 10 W, ICQ = 50 mA, Ψ — — 5:1 —
OUT
pe
pe
C
9.0 9.4 — dB
8.4 — — dB
40 — — %
Typical Performance
Output Power vs. Supply Voltage
12
11
10
ICQ = 50 mA
9
Output Power (Watts)
8
24.5 25.0 25.5 26.0 26.5 27.0 27.5
Supply Voltage (Volts)
9/28/98
P
= 1.3 W
IN
f = 1845 MHz
Gain vs. Frequency
(as measured in a broadband circuit)
12
10
8
Gain (dB)
6
4
1800 1820 1840 1860 1880 1900
Frequency (MHz)
2
VCC = 26 V
I
= 50 mA
CQ
P
= 5 W
OUT
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