Ericsson PTB20258 Datasheet

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Cellular Radio RF Power Transistor

Description

Description

The 20258 is a class AB, NPN, common emitter RF power transistor

The 20258 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts

intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts
minimum output power, it may be used for both CW and PEP

minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold

applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot

metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.

traceability is standard.

Typical Output Pow er and Efficiency vs. Input Power

8

6

4

2

Output Power (Watts)

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Input Power (Watts)

Output Powe

Efficiency

VCC = 25 V
I

= 27 mA

CQ

f = 960 MHz

80

68

56

44

Efficiency (%)

32

20

PTB 20258

6 Watts, 915–960 MHz

 6 Watts, 915–960 MHz
 Class AB Characteristics
 50% Typ Collector Efficiency at 6 Watts
 Tested to solderability standards:

- IEC-68-2-54

- ANSI/J Std-002-A

 Gold Metallization
 Silicon Nitride Passivated

20258

LOT CODE

Package 20208

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T

Above 25°C derate by 0.125 W/°C
Storage Temperature Range T

Thermal Resistance (T

7-21-98

flange

= 25°C P

flange

= 70°C) R

1

CER
CBO
EBO

C

D

stg

θJC

55 Vdc
60 Vdc

4.0 Vdc

1.7 Adc
22 Watts

-40 to +150 °C
8 °C/W

PTB 20258

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Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to E IB = 0 A, IC = 50 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 50 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 1 A h

(BR)CEO
(BR)CES
(BR)EBO

FE

28 29 — Volts
60 70 — Volts

3.5 5 — Volts
20 50 120 —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V

Collector Efficiency

(V

Load Mismatch Tolerance

(V
f = 960 MHz—all phase angles at frequency of test)

= 25 Vdc, P

CC

= 25 Vdc, P

CC

= 25 Vdc, P

CC

= 6 W, ICQ = 27 mA, f = 960 MHz) G

out

= 6 W, ICQ = 27 mA, f = 960 MHz) η

out

= 6 W, ICQ = 27 mA, Ψ — — 30:1 —

out

pe

C

10 11 — dB

—50—%

Typical Performance

Gain vs. Frequency

(as measured in a broadband circuit)

13

VCC = 25 V

12

I

= 27 mA

CQ

P

= 6 W

OUT

11

Gain (dB)

10

9

700 750 800 850 900 950 1000 1050

Frequency (MHz)

Output Power

9

8

7

6

5

4

Output Power (Watts)

3

ICQ = 27 mA
f = 960 MHz

20 22 24 26 28

(at P-1dB)

Supply Voltage (Volts)

vs. Supply Voltage

7-21-98

2