Ericsson PTB20245 Datasheet

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Wide-Band CDMA Power Transistor

Description

The 20245 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band.
Rated at 35 watts minimum output power for PEP applications, it is
specifically intended for operation as a final or driver stage in Wide
CDMA or TDMA systems. Ion implantation, nitride surface passivation
and gold metallization ensure excellent device reliability. 100% lot
traceability is standard.

Typical Output Pow er vs. Input Pow er

60

50

PTB 20245

35 Watts, 2.1–2.2 GHz

• 35 Watts, 2.1–2.2 GHz

• Class AB Characteristics

• Gold Metallization

• Silicon Nitride Passivated

40

30

20

10

Output Power (Watts)

0

024681012

Input Power (Wa tts)

VCC = 26 V
I

= 100 mA

CQ

f = 2000 MHz

20245

LOT CODE

Package 20223

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T

Above 25°C derate by 1.2 W/°C
Storage Temperature Range T

Thermal Resistance (T

flange

= 25° C P

flange

= 70° C) R

CER
CBO
EBO

C

D

STG

θJC

55 Vdc
55 Vdc

3.5 Vdc

7.7 Adc

200 Watts

–40 to +150 °C

0.85 °C/W

9/28/98

1

PTB 20245

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Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Ty p Max Units

Breakdown Voltage C to E VBE = 0 V, IC = 20 mA V(
Breakdown Voltage C to E IB = 0 A, IC = 20 mA, RBE = 22 Ω V(
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(

BR)CES
BR)CER
BR)EBO

DC Current Gain VCE = 10 V, IC = 1.5 A h

FE

55 — — Volts
55 — — Volts

3.5 4.0 — Volts
30 40 — —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V

= 26 Vdc, P

CC

Power Output at 1 dB Compression

(V

= 26 Vdc, ICQ = 85 mA, f = 2.2 GHz) P–1dB 35.0 — — Watts

CC

Collector Efficiency

(V

= 26 Vdc, P

CC

Load Mismatch Tolerance

(V

= 26 Vdc, P

CC

f = 2.2 GHz—all phase angles at frequency of test)

= 10 W, ICQ = 85 mA, f = 2.2 GHz) G

out

= 35 W, ICQ = 85 mA, f = 2.2 GHz) η

out

= 17.5 W, ICQ = 85 mA Ψ — — 5:1 —

out

pe

C

7.5 8.5 — dB

—40—%

Typical Performance

Typical P

12

11

10

, Gain & Efficiency

OUT

vs. Frequenc

Outp ut P ower (W)

VCC = 26 V

9

Gain (dB)

8

Gain (dB)

7

2050 2100 2150 2200 2250

I

= 250 mA

CQ

Frequency (MHz)

(at P-1dB)

Efficiency (%)

Broadband Test Fixture Performance

60
55
50
45
40
35
30
25

Output Power & Efficiency

20

10

8

6

Gain (dB)

4

2

2100 2120 2140 2160 2180 2200

Gain (dB)

VCC = 26 V
I

= 85 mA

CQ

Pout = 35 W

Return Loss (dB)

Frequency (MHz)

Efficiency (%)

60

50

40

Efficiency (%

- 5

30

-15

20

-25

10

-35

0

Return Loss (dB

2

4/3/98