Ericsson PTB20235 Datasheet
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Description
PTB 20235
70 Watts, 2.1–2.2 GHz
Wideband CDMA Power Transistor
The 20235 is a class AB, NPN, push-pull RF power transistor intended
for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP
minimum output power, it is specifically intended for operation as a
final stage in Wide CDMA systems. Ion implantation, nitride surface
passivation and gold metallization ensure excellent device reliability .
100% lot traceability is standard.
Typical Output Pow er vs. Input Pow er
120
100
80
60
40
20
Output Power (Watts)
0
048121620
Input Power (Wa tts)
VCC = 26 V
I
= 150 mA Total
CQ
f = 2.2 GHz
Maximum Ratings
70 Watts, 2.1–2.2 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
20235
LOT CODE
Package 20225 *
Parameter Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T
Above 25°C derate by 1.83 W/°C
Storage Temperature Range T
Thermal Resistance (T
* This package not recommended for class A or CW operation. Two PTB 20245s recommended for CW operation.
9/28/98
flange
= 25°C P
flange
= 70°C) R
1
CER
CBO
EBO
C
D
STG
θJC
55 Vdc
55 Vdc
3.5 Vdc
12 Adc
320 Watts
–40 to +150 °C
0.547 °C/W
PTB 20235
s
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E VBE = 0 V, IC = 20 mA V(
Breakdown Voltage E to B IC = 0 A, IE = 20 mA V(
DC Current Gain VCE = 10 V, IC = 1.5 A h
BR)CES
BR)EBO
FE
55 — — Volts
3.5 4.0 — Volts
30 50 120 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Gain Compression
(V
Collector Efficiency
(V
Load Mismatch Tolerance
(V
—at all phase angles)
= 26 Vdc, P
CC
= 26 Vdc, ICQ = 150 mA, f = 2.2 GHz) P-1dB 70 — — Watts
CC
= 26 Vdc, P
CC
= 26 Vdc, P
CC
= 15 W, ICQ = 150 mA, f = 2.2 GHz) G
OUT
= 70 W, ICQ = 150 mA, f = 2.2 GHz) η
OUT
= 70 W(PEP), ICQ = 150 mA, f = 2.2 GHz Ψ — — 5:1 —
OUT
pe
C
7.5 8.0 — dB
—40—%
Typical Performance
P
, Gain & Efficiency
OUT
10
9
8
Gain (dB)
Gain
7
6
5
2050 2100 2150 2200 2250
Frequency (MHz)
(at P-1dB)
Outp ut P ower (W)
VCC = 26 V
I
= 150 mA Total
CQ
Efficiency (%)
vs. Frequency
120
100
80
60
40
20
Broadband Test Fixture Performance
10
Gain (dB)
8
6
Gain
4
2
Output Power & Efficiency
0
2100 2120 2140 2160 2180 2200
VCC = 26 V
I
= 150 mA Total
CQ
P
= 70 W
OUT
Return Loss (dB)
Frequency (MHz)
Efficiency (%)
60
50
40
30
-5
20
-15
10
-25
0
EfficiencyReturn Los
2
9/10/97
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