Ericsson PTB20230 Datasheet

e

Description

PTB 20230

45 Watts, 1.8–2.0 GHz

PCN/PCS Power Transistor

The 20230 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts
minimum output power for PEP applications, it is specifically intended
for operation as a final or driver stage in CDMA or TDMA systems.
Ion implantation, nitride surface passivation and gold metallization
ensure excellent device reliability. 100% lot traceability is standard.

Typical Output Pow er vs. Input Pow er

70
60
50
40
30
20
10

Output Power (Watts)

0

0246810

Input Power (Wa tts)

VCC = 26 V
I

= 250 mA

CQ

f = 2.0 GHz

 45 Watts, 1.8–2.0 GHz
 Class AB Characteristics
 45% Collector Efficiency at 45 Watts
 Gold Metallization
 Silicon Nitride Passivated

20230

LOT CODE

Package 20234

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T

Above 25°C derate by 1.2 W/°C
Storage Temperature Range T

Thermal Resistance (T

9/28/98

flange

= 25° C P

flange

= 70° C) R

1

CER
CBO
EBO

C

D

STG

θJC

55 Vdc
55 Vdc

4.0 Vdc

7.7 Adc

200 Watts

–40 to +150 °C

0.85 °C/W

PTB 20230

)

)

4

e

Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V
Breakdown Voltage C to E IB = 0 A, IC = 100 mA, RBE = 22 Ω V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V

(BR)CES
(BR)CER

(BR)EBO

DC Current Gain VCE = 5 V, IC = 1 A h

FE

55 — — Volts
55 — — Volts

4.0 5.0 — Volts
20 40 — —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V

Gain Compression

(V

Input Return Loss

(V

Collector Efficiency

(V

Load Mismatch Tolerance

(V
f = 2 GHz—all phase angles at frequency of test)

= 26 Vdc, P

CC

= 26 Vdc, ICQ = 250 mA, f = 2 GHz) P-1dB 45 — — Watts

CC

= 26 Vdc, P

CC

= 26 Vdc, P

CC

= 26 Vdc, P

CC

= 45 W, ICQ = 250 mA, f = 2 GHz) G

OUT

= 45 W, ICQ = 250 mA, f = 2 GHz) Rtn Loss 10 — — dB

OUT

= 45 W, ICQ = 250 mA, f = 2 GHz) η

OUT

= 45 W, ICQ = 250 mA, Ψ — — 3:1 —

OUT

pe

C

8.5 9.5 — dB

45 50 — %

Typical Performance

P

, Gain & Efficiency

OUT

12

11

10

Gain (dB)

Gain

9

VCC = 26 V

8

I

= 250 mA

CQ

7

1750 1800 1850 1900 1950 2000 2050

Frequency (MHz)

(at P-1dB)

Outp ut P ower (W)

Efficiency (%)

vs. Frequency

70

60

50

40

30

20

Broadband Test Fixture Performance

20

16

12

Gain (dB)

Gain (dB)

8

Output Power & Efficiency

2

4

1900 1925 1950 1975 2000

VCC = 26 V
I

CQ

P

Return Loss (dB)

Frequency (MHz)

Efficiency (%)

= 250 mA

= 45 W

OUT

60

50

40

Efficiency (%

- 5

30

-15

20

-25

10

-35

0

Return Loss (dB

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