Ericsson PTB20219 Datasheet

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Description

PTB 20219

70 Watts, 925–960 MHz

Cellular Radio RF Power Transistor

The 20219 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation across the 925 to 960 MHz frequency
band. It is rated at 70 watts minimum output power for both CW and
PEP applications. Ion implantation, nitride surface passivation and
gold metallization are used to ensure excellent device reliability . 100%
lot traceability is standard.

Typical Output Power vs. Input Power

100

90
80
70
60
50
40
30
20
10

0

Output Power (Watts)

0246810

Input Power (Wa tts)

f = 960 MHz
VCC = 26 V

I

= 0.200 A

CQ

• 70 Watts, 925–960 MHz

• Class AB Characteristics

• Guaranteed Performance at 26 Volts, 960
MHz

- Output Power = 70 Watts

- Collector Efficiency = 50% min. at 70 Watts

- IMD = -30 max. at 50 W(PEP)

• Gold Metallization

• Silicon Nitride Passivated

20219

LOT CODE

Package 20216

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T

Above 25° C derate by 0.95 W/°C
Storage Temperature Range T

Thermal Resistance (T

9/28/98

flange

= 25° C P

flange

= 70° C) R

1

CER
CBO
EBO

C

D

STG

θJC

40 Vdc
65 Vdc

4.0 Vdc
20 Adc

159 Watts

–40 to +150 °C

1.1 °C/W

PTB 20219

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Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(
DC Current Gain VCE = 5 V, IC = 1 A h

BR)CEO
BR)CES
BR)EBO

FE

25 30 — Volts
55 70 — Volts

3.5 5 — Volts
20 50 100 —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V

Collector Efficiency

(V

Intermodulation Distortion

(V

Load Mismatch Tolerance

(V
f = 960 MHz—all phase angles at frequency of test)

= 26 Vdc, Pout = 70 W, ICQ = 200 mA, f = 960 MHz) G

CC

= 26 Vdc, Pout = 70 W, ICQ = 200 mA, f = 960 MHz) η

CC

= 26 Vdc, Pout = 50 W(PEP), ICQ = 200 mA, f = 960 MHz) IMD — -31 — dBc

CC

= 26 Vdc, Pout = 50 W(PEP), ICQ = 200 mA, Ψ — — 10:1 —

CC

pe

C

8.5 9.5 — dB

50 — — %

Impedance Data (data shown for fixed-tuned broadband circuit)

(V

= 26 Vdc, Pout = 70 W, ICQ = 200 mA)

CC

Z Source Z Load

Frequency Z Source Z Load

MHz R jX R jX

925 2.0 2.4 2.1 1.6
942 2.0 2.9 2.1 1.8
960 2.1 3.4 2.2 2.0

Z0 = 10 Ω

9/11/97

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