Ericsson PTB20195 Datasheet

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Description

PTB 20195

150 Watts, 860–900 MHz

Cellular Radio RF Power Transistor

The 20195 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 860 to 900 MHz. Rated at 150
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability . 100% lot
traceability is standard.

Typical Output Pow er vs. Input Pow er

200

160

120

80

VCC = 26 V
I

40

Output Power (Watts)

0

0 5 10 15 20 25 30

Input Power (Wa tts)

= 400 mA Total

CQ

f = 900 MHz

 Class AB Characteristics
 26 Volt, 900 MHz Characteristics

- Output Power = 150 Watts Min

- Collector Efficiency = 50% Min at 150 Watts

- Gain = 9 dB Typ

 Gold Metallization
 Silicon Nitride Passivated

20195

LOT CODE

Package 20224

Maximum Ratings

Parameter Symbol Value Unit

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage (collector open) V
Collector Current (continuous) I
Total Device Dissipation at T

Above 25°C derate by 1.89 W/°C
Storage Temperature Range T

Thermal Resistance (T

9/28/98

flange

= 25°C P

flange

= 70°C) R

1

CER
CBO
EBO

C

D

STG

θJC

40 Vdc
60 Vdc

4.0 Vdc
25 Adc

330 Watts

–40 to +150 °C

0.53 °C/W

PTB 20195

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Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Breakdown Voltage C to E IB = 0 A, IC = 100 mA V
Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V
DC Current Gain VCE = 5 V, IC = 1 A h

(BR)CEO
(BR)CES
(BR)EBO

FE

25 30 — Volts
55 70 — Volts

3.5 5 — Volts
20 50 100 —

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V
f = 900 MHz)

Collector Efficiency

(V
f = 900 MHz)

Intermodulation Distortion

(V
f1 = 899.90 MHz, f2 = 900.00 MHz)

Load Mismatch Tolerance

(V
f = 900 MHz—all phase angles at frequency of test)

= 26 Vdc, P

CC

= 26 Vdc, P

CC

= 26 Vdc, P

CC

= 26 Vdc, P

CC

= 150 W, ICQ = 400 mA Total, G

out

= 150 W, ICQ = 400 mA Total, η

out

= 150 W(PEP), ICQ = 400 mA Total, IMD — -32 -28 dBc

out

= 150 W(PEP), ICQ = 400 mA Total, Ψ — — 5:1 —

out

pe

C

89—dB

50 — — %

Impedance Data (data shown for fixed-tuned broadband circuit)

(V

= 26 Vdc, P

CC

= 150 W, ICQ = 400 mA Total)

out

Z Source Z Load

Frequency Z Source Z Load

MHz R jX R jX

860 8.8 13.3 4.1 -3.0
880 10.0 13.5 3.5 -3.0
900 11.1 13.7 2.8 -3.0

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